Core Authorized Distributor

SineSemi中晶新源

One-Stop Solutions for Power Discretes and Modules

Official siteFounded2017HQ333 Haiyang Road, Lingang New Area, Shanghai

Company Profile

About SineSemi

Founded in 2017 in Shanghai's Lingang New Area, SineSemi is a virtual-IDM total-solution provider focused on power semiconductors, with RMB 100 million registered capital fully paid in as of July 2025. Its strategic shareholders are UNT (SSE STAR: 688469) — a top-tier Chinese power wafer fab spanning Si/SiC/GaN across 6/8/12-inch lines — and GOOD-ARK (SZSE: 002079), China's first A-share-listed discrete-device manufacturer. Its core team comes mainly from Diodes, NXP, Onsemi, TI and Vishay; CEO Robin Sun previously headed Diodes' global mid/high-voltage MOSFET business unit, and its chief device/reliability simulation expert holds a PhD from Tsinghua and a national Young Top-Talent title, with the team averaging 15–20 years across power-discrete R&D, packaging, engineering and quality. With in-house wafer test and 100% screening for automotive-grade parts, its SGT MOSFET platform benchmarks — and in select voltage classes exceeds — Infineon, and it won China's Best Discrete-Device Product Award and other industry honors in 2025.

Positioning

Virtual-IDM power semiconductor house with a broad MOSFET / Super-Junction / IGBT / SiC portfolio serving automotive, AI-server power, new energy, industrial and humanoid-robot core component markets.

Lineup

Key product lines

  • SGT MOSFET (25–300V, incl. AEC-Q101 automotive grade)

    SGT-structure low-to-mid-voltage MOSFET platform spanning 25–300V, with automotive-grade (AEC-Q101) and consumer-grade lines; several voltage classes benchmark to Infineon.

  • Super-Junction HV MOSFET (600–800V)

    Super-Junction high-voltage MOSFET spanning 600–800V, paired with advanced packages (TOLL/TOLT/half-bridge) for higher power density.

  • IGBT discrete & modules (600–1350V)

    IGBT discrete and module lineup spanning 600–1350V, for industrial VFD, motor-drive and similar applications.

  • SiC MOSFET / SiC SBD (650V/1200V)

    Silicon-carbide (SiC) MOSFET and Schottky barrier diodes at 650V/1200V, for high-frequency, high-efficiency power supplies and new-energy applications.

  • IPM (Intelligent Power Modules)

    Intelligent Power Modules (IPM) integrating power switches and driver circuitry in one package, simplifying the power stage of motor-drive systems.

  • Gate driver / LED driver ICs

    Gate-driver ICs (isolated/non-isolated, incl. automotive 2-ch isolated drivers) and LED-driver ICs, pairing with the company's own power devices for driver-plus-switch system solutions.

Credentials

Certifications & honors

  • AEC-Q101 (SGS)
  • IATF16949
  • VDA6.3
  • HTRB 2000h @175°C (exceeds industry-standard 1000h)
  • Member, Humanoid Robot Testing & Certification Working Group, China Robot Testing & Certification Alliance (2024)
  • TILVA Product Certification for Power Semiconductor Devices in PV Storage & Charging Energy Conversion Equipment (2024)
  • 2025 China Best Discrete Semiconductor Device Product Award

History

SineSemi milestones

  1. 2017

    Founded in Lingang New Area, Shanghai

  2. 2024

    Joined the humanoid-robot testing/certification working group of the China Robot Certification Alliance; obtained the TILVA power-semiconductor product certification for PV-storage-charging conversion devices; won the 2024 OFweek Robot Industry Core Component Innovation Award

  3. 2025

    RMB 100 million registered capital fully paid in

  4. 2025

    Joined the China Automotive Chip Alliance whitelist; won multiple 2025 honors including China's Best Discrete-Device Product Award, CIAS Power-Semiconductor Star Products for EV and PV-storage-charging, Influential Automotive Chip of the Year, and Shanghai "Star of Tomorrow"

Engineering

Key technical strengths

  • Full-voltage SGT MOSFET platform (25–300V) benchmarked to Infineon, matching or exceeding it at several voltage classes (30V/60V/100V/120V)
  • Advanced package portfolio: PDFN5060 / PDFN5060-W (wettable flanks) / PDFN5060-DSC (dual-side cooling) / TOLL / TOLT / half-bridge, enabling miniaturization and higher power density
  • Automotive-grade quality system: in-house wafer test with 100% screening for automotive parts, AEC-Q101 (SGS certified) + HTRB 2000h@175°C (2x the 1000h industry norm) + IATF16949 / VDA6.3
  • Core team from Diodes / NXP / Onsemi / TI / Vishay, with 20+ years of cumulative R&D depth and 10+ years in automotive electronics
  • 27 patents filed (19 inventions + 8 utility models, 11 granted) spanning chip, package and integrated-solution technologies

Industries

Key application markets

Automotive electronics (EPS/oil pump, BMS, seat motor, headlight, EPB, sunroof, power tailgate)AI-server power (primary-side PFC / secondary-side sync rectification)Drone / industrial UAV motor driveBLDC motors (power tools, high-power fans, e-bikes)New-energy storage BMSSolar invertersHumanoid-robot core components

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