Specifications
- Automotive (Y/N)
- N
- Package
- TO247-4L Notch
- Configuration
- N
- Tj
- 175 °C
- VDS_Max
- 1200 V
- ID_Max
- 129 A
- VGS_Max
- -10/+22 V
- VGS(th)_Typ
- 3 V
- RDS(ON)_Typ @VGS=18V,25°C
- 16 mΩ
- RDS(ON)_Max @VGS=18V,25°C
- 22 mΩ
- RDS(ON)_Typ @VGS=18V,175°C
- 26 mΩ
- Ciss_Typ
- 4063 pF
- Coss_Typ
- 227 pF
- Crss_Typ
- 3 pF
- Qg_Typ
- 152 nC
- MPQ
- 30 pcs
- MOQ
- 2250 pcs
Not sure how to choose? Read the SiC MOSFETs Selection Guide →
Package & Schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SCMP120R16AY4N
1200V N-Channel Silicon Carbide Power MOSFET
Product Summary
| VDS |
RDS(ON), typ |
ID, max |
| 1200 V |
16 mΩ @ VGS = 18V |
129 A |
TO247-4L Notch
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SCMP120R16AY4N |
TO247-4L Notch |
P120R16A |
Tube |
30 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDSmax |
1200 |
V |
| Gate - Source Voltage (DC) |
VGS |
-10/+22 |
V |
| Gate - Source Voltage |
VGSop |
-5/+18 |
V |
| Continuous Drain Current (TC = 25°C) |
ID |
129 |
A |
| Continuous Drain Current (TC = 100°C) |
ID |
91 |
A |
| Pulsed Drain Current |
IDM |
322 |
A |
| Power Dissipation (TC = 25°C) |
PD |
500 |
W |
| Power Dissipation, Derate Above 25°C |
PD |
3.3 |
W/°C |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +175 |
°C |
| Maximum Lead Temperature for Soldering, 1/8" from Case for 10 Seconds |
TL |
260 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient |
R_θJA |
— |
40 |
°C/W |
| Thermal Resistance, Junction-to-Case |
R_θJC |
— |
0.30 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 1.0mA |
1200 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 1200V, VGS = 0V |
— |
1.0 |
100 |
µA |
|
|
VDS = 1200V, VGS = 0V, TJ = 175°C |
— |
10.0 |
— |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = +22V, VDS = 0V, TJ = 150°C |
— |
— |
+100 |
nA |
|
|
VGS = -10V, VDS = 0V, TJ = 150°C |
— |
— |
-100 |
nA |
On Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Gate Threshold Voltage |
VGS(th) |
VGS = VDS, ID = 24mA (tested after VGS = 22V, 1ms pulse) |
2.4 |
3.0 |
4.5 |
V |
| Static Drain-Source On-Resistance |
RDS(ON) |
VGS = 18V, ID = 50A |
— |
16 |
22 |
mΩ |
|
|
VGS = 18V, ID = 50A, TJ = 175°C |
— |
26 |
— |
mΩ |
|
|
VGS = 15V, ID = 50A |
— |
22 |
— |
mΩ |
| Forward Transconductance |
gfs |
VGS = 20V, ID = 50A |
— |
33 |
— |
S |
| Diodes Forward Voltage |
VSD |
VGS = -3V, ISD = 50A |
— |
4.0 |
— |
V |
Dynamic Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
Ciss |
VDS = 800V, VGS = 0V, f = 250KHz |
— |
4063 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
227 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
3.0 |
— |
pF |
| Stored Energy in Output Capacitance |
Eoss |
VDS = 0V to 800V, VGS = 0V |
— |
94 |
— |
µJ |
| Internal Gate Resistance |
RG |
f = 1MHz, VAC = 30mV |
— |
2.7 |
— |
Ω |
Switching Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Turn-On Switching Loss |
Eon |
VDS = 800V, VGS = -3/18V, ID = 50A, RG = 4.7Ω |
— |
539 |
— |
µJ |
| Turn-Off Switching Loss |
Eoff |
|
— |
302 |
— |
µJ |
| Total Switching Loss |
Etot |
|
— |
841 |
— |
µJ |
| Turn-On Delay Time |
td(on) |
VDS = 800V, VGS = -3/18V, ID = 50A, RG = 4.7Ω |
— |
32 |
— |
ns |
| Rise Time |
tr |
|
— |
25 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
65 |
— |
ns |
| Fall Time |
tf |
|
— |
11.0 |
— |
ns |
Gate Charge Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge |
Qg(tot) |
VDS = 800V, VGS = -3/18V, ID = 50A, Inductive load |
— |
152 |
— |
nC |
| Gate-Source Charge |
Qgs |
|
— |
49 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
29 |
— |
nC |
Drain-Source Diode Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Reverse Recovery Time |
trr |
VR = 800V, ISD = 50A, di/dt = 3000A/µs, Includes Qoss |
— |
22 |
— |
ns |
| Reverse Recovery Charge |
Qrr |
|
— |
486 |
— |
nC |
| Peak Reverse Recovery Current |
Irrm |
|
— |
37 |
— |
A |
| Continuous Diode Forward Current |
IS |
VGS = -3.0V |
— |
— |
122 |
A |
| Pulsed Diode Forward Current |
ISM |
VGS = -3.0V |
— |
— |
322 |
A |
