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OXRIpower澳芯瑞能

Vertically Integrated Power Semiconductor Design House

Founded2021HQLaoshan, Qingdao, Shandong (R&D center: Wuxi)

Company Profile

About OXRIpower

Qingdao Oxripower Semiconductor Technology Co., Ltd. (OXRIpower) was founded in 2021, headquartered in Qingdao with an R&D center in Wuxi, focusing on the design, sales and system services of power semiconductor devices. Operating a quasi-IDM model — its shareholder Hai-Ao Semiconductor is a major shareholder of foundry SiEn (Qingdao) — it co-develops processes with SiEn to deliver power devices benchmarked to Infineon, Onsemi and IXYS, led by system-level solutions. Its core team holds 20+ years in power-device process, simulation, chip design and motor-drive applications. The company has since been acquired by HYASIC (Huayuan Zhixin), and its former standalone website is no longer active; details of the acquisition are subject to official and business-registry confirmation.

Positioning

Quasi-IDM power-device designer spanning MOSFET, IGBT/IPM, SiC and power/driver ICs, with system solutions for industrial, appliance, energy and motor-drive markets.

Lineup

Key product lines

MOSFET (Trench 20–100V / SGT 40–150V / Planar 200–3300V)
MOSFET lineup spanning Trench, SGT and Planar process technologies across a 20-3300V voltage range.
HS037N12A HT019N02A HT021P04T
IGBT discrete & modules (600/1200/1700V FS-IGBT)
Field-stop (FS) structure IGBT discretes and modules at 600V/1200V/1700V.
OX2G15N1200AL OX2G25N1200AL OX2G40N1200AL
IPM (Intelligent Power Modules)
Intelligent Power Modules (IPM) integrating power switches and drive circuitry for inverter-appliance and motor-drive systems.
SiC (600V SBD / 600V MOSFET)
Silicon-carbide (SiC) Schottky diodes and MOSFETs at 600V.
Power IC / Driver IC
Power and driver ICs pairing with power devices for system-level solutions.

History

OXRIpower milestones

2021
20V/30V/40V MOSFET series in production
2022
60V MOSFET series in production
2023
20-40V Gen2, 60/100V Gen2 and 200-3000V planar MOS series in production
2024
100/150V SGT Gen1, 650V/1200V FS-IGBT, 600V SiC SBD and 600/650V HV super-junction series in production
2025
20-40V Gen3, 200V SGT, 600V SiC MOSFET and 700V HV super-junction series in production

Engineering

Key technical strengths

MOSFET uses proprietary deep-trench, small-pitch design to cut RSP significantly — its 60V P-channel product is 20%+ smaller than peers
First in China to adopt VLD structure for 600V/1200V/1700V IGBTs, cutting terminal size 25%+ versus conventional structures; backside lithography on 60μm-thick wafers enables a next-gen reverse-conducting IGBT
Quasi-IDM model: shareholder Hai-Ao Semiconductor is a major shareholder of foundry SiEn (Qingdao), enabling joint process development benchmarked to Infineon, Onsemi and IXYS
Quality system spans reliability design, 168H/1000H reliability testing, zero-defect culture and a standardized failure-analysis flow (visual inspection → electrical test → X-ray → ultrasonic scan → decap → SEM → ball-grinding analysis)

Industries

Key application markets

AC 3-in-1 control boardsWashing-machine dual-inverter drivesCompressor / 3-phase compressor inverter boardsDishwasher inverter boardsPower-tool inverter boards3-phase fan inverter boardsAutomotive water-pump controllersPV invertersRail transit

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OXRIpower products & selection

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