OXRIpower 澳芯瑞能
Vertically Integrated Power Semiconductor Design House
Company Profile
About OXRIpower
Qingdao Oxripower Semiconductor Technology Co., Ltd. (OXRIpower) was founded in 2021, headquartered in Qingdao, focusing on the design, sales and system services of power semiconductor devices. Operating a quasi-IDM model — its shareholder Hai-Ao Semiconductor is a major shareholder of foundry SiEn (Qingdao) — it co-develops processes with SiEn to deliver power devices benchmarked to international first-tier products, led by system-level solutions. Its core team holds 20+ years in power-device process, simulation, chip design and motor-drive applications.
A quasi-IDM power-device designer — its shareholder Hai-Ao Semiconductor is a major shareholder of foundry SiEn (Qingdao), co-developing processes with the fab. Products span MOSFET, IGBT/IPM, SiC and power/driver ICs, with system solutions for industrial, appliance, energy and motor-drive markets.
Lineup
Key product lines
- IGBT discrete & modules (600/1200/1700V FS-IGBT)
Field-stop (FS) structure IGBT discretes and modules at 600V/1200V/1700V.
- IPM (Intelligent Power Modules)
Intelligent Power Modules (IPM) integrating power switches and drive circuitry for inverter-appliance and motor-drive systems.
- SiC (600V SBD / 600V MOSFET)
Silicon-carbide (SiC) Schottky diodes and MOSFETs at 600V.
- Power IC / Driver IC
Power and driver ICs pairing with power devices for system-level solutions.
History
OXRIpower milestones
- 2021
20V/30V/40V MOSFET series in production
- 2022
60V MOSFET series in production
- 2023
20-40V Gen2, 60/100V Gen2 and 200-3000V planar MOS series in production
- 2024
100/150V SGT Gen1, 650V/1200V FS-IGBT, 600V SiC SBD and 600/650V HV super-junction series in production
- 2025
20-40V Gen3, 200V SGT, 600V SiC MOSFET and 700V HV super-junction series in production
Engineering
Key technical strengths
- Quasi-IDM model: shareholder Hai-Ao Semiconductor is a major shareholder of foundry SiEn (Qingdao), enabling joint process development benchmarked to international first-tier products
- MOSFET uses proprietary deep-trench, small-pitch design to cut RSP significantly — its 60V P-channel product is 20%+ smaller than peers
- First in China to adopt VLD structure for 600V/1200V/1700V IGBTs, cutting terminal size 25%+ versus conventional structures; backside lithography on 60μm-thick wafers enables a next-gen reverse-conducting IGBT
- Quality system spans reliability design, 168H/1000H reliability testing, zero-defect culture and a standardized failure-analysis flow (visual inspection → electrical test → X-ray → ultrasonic scan → decap → SEM → ball-grinding analysis)
Industries
Key application markets
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