SCMP120R60AY4N product image

Product Detail

SCMP120R60AY4N

SineSemi 中晶新源Core Authorized Distributor

SiC MOSFETsTO247-4L Notch
Download Datasheet

Specifications

Automotive (Y/N)
N
Package
TO247-4L Notch
Configuration
N
Tj
175 °C
VDS_Max
1200 V
ID_Max
48 A
VGS_Max
-10/+22 V
VGS(th)_Typ
3 V
RDS(ON)_Typ @VGS=18V,25°C
60 mΩ
RDS(ON)_Max @VGS=18V,25°C
84 mΩ
RDS(ON)_Typ @VGS=18V,175°C
96 mΩ
Ciss_Typ
1090 pF
Coss_Typ
70 pF
Crss_Typ
3 pF
Qg_Typ
40 nC
MPQ
30 pcs
MOQ
2250 pcs

Package & Schematic

SCMP120R60AY4N package outline, pin configuration and schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SCMP120R60AY4N

1200V N-Channel Silicon Carbide Power MOSFET

Product Summary
V_DS R_DS(ON), typ I_D, max
1200 V 60 mΩ @ V_GS = 18V 48 A

TO247-4L Notch

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SCMP120R60AY4N TO247-4L Notch P120R16A Tube 30

Note: Datasheet PDF shows Device Marking "P120R16A" for SCMP120R60AY4N in the Ordering Information table; this appears to be a typo in the PDF (expected "P120R60A" based on the naming pattern). Value preserved as-printed from source.

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DSmax 1200 V
Gate - Source Voltage (DC) V_GS -10/+22 V
Gate - Source Voltage V_GSop -5/+18 V
Continuous Drain Current (T_C = 25°C) I_D 48 A
Continuous Drain Current (T_C = 100°C) I_D 34 A
Pulsed Drain Current I_DM 121 A
Power Dissipation (T_C = 25°C) P_D 263 W
Power Dissipation, Derate Above 25°C P_D 1.8 W/°C
Junction & Storage Temperature Range T_J, T_STG -55 ~ +175 °C
Maximum Lead Temperature for Soldering, 1/8" from Case for 10 Seconds T_L 260 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient R_θJA — 40 °C/W
Thermal Resistance, Junction-to-Case R_θJC — 0.57 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 1.0mA 1200 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = 1200V, V_GS = 0V — 1.0 100 µA
V_DS = 1200V, V_GS = 0V, T_J = 175°C — 10.0 — µA
Gate-Source Leakage Current I_GSS V_GS = +22V, V_DS = 0V, T_J = 150°C — — +100 nA
V_GS = -10V, V_DS = 0V, T_J = 150°C — — -100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage V_GS(th) V_GS = V_DS, I_D = 7.5mA (tested after V_GS = 22V, 1ms pulse) 2.4 3.0 4.5 V
Static Drain-Source On-Resistance R_DS(ON) V_GS = 18V, I_D = 22A — 60 84 mΩ
V_GS = 18V, I_D = 22A, T_J = 175°C — 96 — mΩ
V_GS = 15V, I_D = 22A — 80 — mΩ
Forward Transconductance g_fs V_GS = 20V, I_D = 22A — 14.6 — S
Diodes Forward Voltage V_SD V_GS = -3V, I_SD = 22A — 4.3 — V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance C_iss V_DS = 800V, V_GS = 0V, f = 250KHz — 1090 — pF
Output Capacitance C_oss — 70 — pF
Reverse Transfer Capacitance C_rss — 3.0 — pF
Stored Energy in Output Capacitance E_oss V_DS = 0V to 800V, V_GS = 0V — 29 — µJ
Internal Gate Resistance R_G f = 1MHz, V_AC = 30mV — 3.9 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Switching Loss E_on V_DS = 800V, V_GS = -3/18V, I_D = 22A, R_G = 6.8Ω — 129 — µJ
Turn-Off Switching Loss E_off — 55 — µJ
Total Switching Loss E_tot — 184 — µJ
Turn-On Delay Time t_d(on) V_DS = 800V, V_GS = -3/18V, I_D = 22A, R_G = 6.8Ω — 15 — ns
Rise Time t_r — 10 — ns
Turn-Off Delay Time t_d(off) — 26 — ns
Fall Time t_f — 7.0 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge Q_g(tot) V_DS = 800V, V_GS = -3/18V, I_D = 22A, Inductive load — 40 — nC
Gate-Source Charge Q_gs — 13 — nC
Gate-Drain Charge Q_gd — 11.0 — nC
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Reverse Recovery Time t_rr V_R = 800V, I_SD = 22A, di/dt = 3000A/µs, Includes Q_oss — 13 — ns
Reverse Recovery Charge Q_rr — 145 — nC
Peak Reverse Recovery Current I_rrm — 18 — A
Continuous Diode Forward Current I_S V_GS = -3.0V — — 48 A
Pulsed Diode Forward Current I_SM V_GS = -3.0V — — 121 A
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