Specifications
- Automotive (Y/N)
- N
- Package
- TO247-4L Notch
- Configuration
- N
- Tj
- 175 °C
- VDS_Max
- 1200 V
- ID_Max
- 32 A
- VGS_Max
- -10/+22 V
- VGS(th)_Typ
- 3 V
- RDS(ON)_Typ @VGS=18V,25°C
- 80 mΩ
- RDS(ON)_Max @VGS=18V,25°C
- 108 mΩ
- RDS(ON)_Typ @VGS=18V,175°C
- 128 mΩ
- Ciss_Typ
- 807 pF
- Coss_Typ
- 52 pF
- Crss_Typ
- 1 pF
- Qg_Typ
- 28 nC
- MPQ
- 30 pcs
- MOQ
- 2250 pcs
Package & Schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SCMP120R80AY4N
1200V N-Channel Silicon Carbide Power MOSFET
Product Summary
| V_DS |
R_DS(ON), typ |
I_D, max |
| 1200 V |
80 mΩ @ V_GS = 18V |
32 A |
TO247-4L Notch
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SCMP120R80AY4N |
TO247-4L Notch |
P120R80A |
Tube |
30 |
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
V_DSmax |
1200 |
V |
| Gate - Source Voltage (DC) |
V_GS |
-10/+22 |
V |
| Gate - Source Voltage |
V_GSop |
-5/+18 |
V |
| Continuous Drain Current (T_C = 25°C) |
I_D |
32 |
A |
| Continuous Drain Current (T_C = 100°C) |
I_D |
22 |
A |
| Pulsed Drain Current |
I_DM |
79 |
A |
| Power Dissipation (T_C = 25°C) |
P_D |
150 |
W |
| Power Dissipation, Derate Above 25°C |
P_D |
1.0 |
W/°C |
| Junction & Storage Temperature Range |
T_J, T_STG |
-55 ~ +175 |
°C |
| Maximum Lead Temperature for Soldering, 1/8" from Case for 10 Seconds |
T_L |
260 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient |
R_θJA |
— |
40 |
°C/W |
| Thermal Resistance, Junction-to-Case |
R_θJC |
— |
1.0 |
°C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V_(BR)DSS |
V_GS = 0V, I_D = 1.0mA |
1200 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
I_DSS |
V_DS = 1200V, V_GS = 0V |
— |
1.0 |
100 |
µA |
|
|
V_DS = 1200V, V_GS = 0V, T_J = 175°C |
— |
10.0 |
— |
µA |
| Gate-Source Leakage Current |
I_GSS |
V_GS = +22V, V_DS = 0V |
— |
— |
+100 |
nA |
|
|
V_GS = -10V, V_DS = 0V |
— |
— |
-100 |
nA |
On Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Gate Threshold Voltage |
V_GS(th) |
V_GS = V_DS, I_D = 5.0mA (tested after V_GS = 22V, 1ms pulse) |
2.0 |
3.0 |
4.5 |
V |
| Static Drain-Source On-Resistance |
R_DS(ON) |
V_GS = 18V, I_D = 14A |
— |
80 |
108 |
mΩ |
|
|
V_GS = 18V, I_D = 14A, T_J = 175°C |
— |
128 |
— |
mΩ |
|
|
V_GS = 15V, I_D = 14A |
— |
109 |
— |
mΩ |
| Forward Transconductance |
g_fs |
V_GS = 20V, I_D = 14A |
— |
9.4 |
— |
S |
| Diodes Forward Voltage |
V_SD |
V_GS = -3V, I_SD = 14A |
— |
4.3 |
— |
V |
Dynamic Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
C_iss |
V_DS = 800V, V_GS = 0V, f = 250KHz |
— |
807 |
— |
pF |
| Output Capacitance |
C_oss |
|
— |
52 |
— |
pF |
| Reverse Transfer Capacitance |
C_rss |
|
— |
1.0 |
— |
pF |
| Stored Energy in Output Capacitance |
E_oss |
V_DS = 0V to 800V, V_GS = 0V |
— |
22 |
— |
µJ |
| Internal Gate Resistance |
R_G |
f = 1MHz, V_AC = 30mV |
— |
4.2 |
— |
Ω |
Switching Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Turn-On Switching Loss |
E_on |
V_DS = 800V, V_GS = -3/18V, I_D = 14A, R_G = 6.8Ω |
— |
78 |
— |
µJ |
| Turn-Off Switching Loss |
E_off |
|
— |
100 |
— |
µJ |
| Total Switching Loss |
E_tot |
|
— |
258 |
— |
µJ |
| Turn-On Delay Time |
t_d(on) |
V_DS = 800V, V_GS = -3/18V, I_D = 14A, R_G(ext) = 6.8Ω |
— |
13 |
— |
ns |
| Rise Time |
t_r |
|
— |
9.0 |
— |
ns |
| Turn-Off Delay Time |
t_d(off) |
|
— |
23 |
— |
ns |
| Fall Time |
t_f |
|
— |
9.0 |
— |
ns |
Gate Charge Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge |
Q_g(tot) |
V_DS = 800V, V_GS = -3/18V, I_D = 14A |
— |
28 |
— |
nC |
| Gate-Source Charge |
Q_gs |
|
— |
9.0 |
— |
nC |
| Gate-Drain Charge |
Q_gd |
|
— |
5.0 |
— |
nC |
Drain-Source Diode Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Reverse Recovery Time |
t_rr |
V_R = 800V, I_SD = 14A, di/dt = 3000A/µs, Includes Q_oss |
— |
11 |
— |
ns |
| Reverse Recovery Charge |
Q_rr |
|
— |
120 |
— |
nC |
| Peak Reverse Recovery Current |
I_rrm |
|
— |
17 |
— |
A |
| Continuous Diode Forward Current |
I_S |
V_GS = -3.0V |
— |
— |
32 |
A |
| Pulsed Diode Forward Current |
I_SM |
V_GS = -3.0V |
— |
— |
79 |
A |
