Product Detail
SRC020H135AND
SineSemi 中晶新源Core Authorized Distributor
Specifications
- IC
- 40 A
- VCE(sat)_Max
- 1.4 V
- Tj
- 175 °C
- IC_Max @100°C
- 20 A
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Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SRC020H135AND
1350V / 20A IGBT
Features
- Low Saturation Voltage VCE(SAT)
- Low Switching Losses
Benefits
- Low Conduction for a High Efficiency
- Rugged Transient Reliability
- Low EMI
Applications
- Inductive cooking
- Inverterized microwave ovens
- Resonant converters
- Soft switching applications
Key Performance and Package Parameters
| Type | VCE | IC | VCE(SAT) (TA = 25°C, IC = 20 A, VGE = 15 V) | TJmax | Package |
|---|---|---|---|---|---|
| IGBT | 1350 V | 20A | 1.40 V | 175°C | TO247-3L |
Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector emitter voltage | VCE | TA = 25 °C | 1350 | V |
| DC collector current | IC | TC = 25 °C | 40 | A |
| TC = 100 °C | 20 | A | ||
| Pulsed collector current | ICpuls | 60 | A | |
| Maximum Diode forward current | IF | TC = 25 °C | 40 | A |
| TC = 100 °C | 20 | A | ||
| Diode pulsed current | IFpuls | 60 | A | |
| Gate Source Voltage | VGE | TA = 25 °C | ±20 | V |
| Junction temperature | TM | -55 to +175 | °C | |
| Storage temperature | Tstg | -55 to +175 | °C | |
| Temperature under switching conditions | TC OP | -40 to +150 | °C |
Thermal Resistance
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| IGBT Thermal resistance junction - case | R_θJC | IGBT | — | 0.235 | — | °C/W |
Static Characteristics
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector emitter voltage | V(BR)CES | VGE = 0 V, IC =0.5 mA, TVJ = 25 °C | 1350 | — | — | V |
| Collector emitter saturation voltage | VCEsat | VGE = 15 V, IC = 20 A, TVJ = 25 °C | — | 1.40 | — | V |
| VGE = 15 V, IC = 20 A, TVJ = 175 °C | — | 1.71 | — | V | ||
| Diode forward voltage | Vf | VGE = 0 V, IC = 20 A, TVJ = 25 °C | — | 1.71 | — | V |
| VGE = 0 V, IC = 20 A, TVJ = 175 °C | — | 1.90 | — | V | ||
| Gate-emitter threshold voltage | VGE(th) | VGE = VCE, IC = 0.5 mA, Tvd = 25 °C | — | 6.18 | — | V |
| Zero gate voltage collector current | ICES | VCE = 600 V, VGE = 0 V, TVJ = 25 °C | — | — | 100 | µA |
| Gate-emitter leakage current | IGES | VGE = 20 V, VCE = 0 V | — | — | 200 | nA |
| IGES | VGE = -20 V, VCE = 0 V | -200 | — | — | nA |
Dynamic Characteristics
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Input capacitance | Cies | VGE = 0 V | — | 3276 | — | pF |
| Output capacitance | Coes | VCE = 25 V | — | 48 | — | pF |
| Reverse transfer capacitance | Cres | f = 100 KHz | — | 16 | — | pF |
| Gate charge | QG | VGE = 0 V to 15 V, IC =20A, VCE = 600 V | — | 114 | — | nC |
Notes:
Confidential Shared Under NDA.