Product Detail
SRC020H135AND
SineSemi 中晶新源Core Authorized Distributor
Specifications
- IC
- 40 A
- VCE(sat)_Max
- 1.4 V
- Tj
- 175 °C
- IC_Max @100°C
- 20 A
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SRC020H135AND
1350V / 20A IGBT
Features
- Low Saturation Voltage V_CE(SAT)
- Low Switching Losses
Benefits
- Low Conduction for a High Efficiency
- Rugged Transient Reliability
- Low EMI
Applications
- Inductive cooking
- Inverterized microwave ovens
- Resonant converters
- Soft switching applications
Key Performance and Package Parameters
| Type | V_CE | I_C | V_CE(SAT) (T_A = 25°C, I_C = 20 A, V_GE = 15 V) | T_Jmax | Package |
|---|---|---|---|---|---|
| IGBT | 1350 V | 20A | 1.40 V | 175°C | TO247-3L |
Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector emitter voltage | V_CE | T_A = 25 °C | 1350 | V |
| DC collector current | I_C | T_C = 25 °C | 40 | A |
| T_C = 100 °C | 20 | A | ||
| Pulsed collector current | I_Cpuls | 60 | A | |
| Maximum Diode forward current | I_F | T_C = 25 °C | 40 | A |
| T_C = 100 °C | 20 | A | ||
| Diode pulsed current | I_Fpuls | 60 | A | |
| Gate Source Voltage | V_GE | T_A = 25 °C | ±20 | V |
| Junction temperature | T_M | -55 to +175 | °C | |
| Storage temperature | T_stg | -55 to +175 | °C | |
| Temperature under switching conditions | T_C OP | -40 to +150 | °C |
Thermal Resistance
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| IGBT Thermal resistance junction - case | R_θJC | IGBT | — | 0.235 | — | °C/W |
Static Characteristics
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector emitter voltage | V_(BR)CES | V_GE = 0 V, I_C =0.5 mA, T_VJ = 25 °C | 1350 | — | — | V |
| Collector emitter saturation voltage | V_CEsat | V_GE = 15 V, I_C = 20 A, T_VJ = 25 °C | — | 1.40 | — | V |
| V_GE = 15 V, I_C = 20 A, T_VJ = 175 °C | — | 1.71 | — | V | ||
| Diode forward voltage | V_f | V_GE = 0 V, I_C = 20 A, T_VJ = 25 °C | — | 1.71 | — | V |
| V_GE = 0 V, I_C = 20 A, T_VJ = 175 °C | — | 1.90 | — | V | ||
| Gate-emitter threshold voltage | V_GE(th) | V_GE = V_CE, I_C = 0.5 mA, Tvd = 25 °C | — | 6.18 | — | V |
| Zero gate voltage collector current | I_CES | V_CE = 600 V, V_GE = 0 V, T_VJ = 25 °C | — | — | 100 | µA |
| Gate-emitter leakage current | I_GES | V_GE = 20 V, V_CE = 0 V | — | — | 200 | nA |
| I_GES | V_GE = -20 V, V_CE = 0 V | -200 | — | — | nA |
Dynamic Characteristics
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Input capacitance | C_ies | V_GE = 0 V | — | 3276 | — | pF |
| Output capacitance | C_oes | V_CE = 25 V | — | 48 | — | pF |
| Reverse transfer capacitance | C_res | f = 100 KHz | — | 16 | — | pF |
| Gate charge | Q_G | V_GE = 0 V to 15 V, I_C =20A, V_CE = 600 V | — | 114 | — | nC |
Notes:
Confidential Shared Under NDA.