Product Detail
SRC025H135CND
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Package
- TO247-3L
- VCE_Max
- 1350 V
- IC
- 50 A
- VCE(sat)_Max
- 1.7 V
- Product Type
- RC-IGBT
- Tj
- 175 °C
- Application Level
- Consumer
- IC_Max @100°C
- 25 A
- ICP
- 75 A
- EOFF
- 0.94 mJ
- IF_Max @25°C
- 50 A
- TD(OFF)
- 115 ns
- Tf
- 227 ns
- Qg
- 100 nC
- IF,pulse
- 75 A
- Forward Voltage Drop VF
- 1.9 V
Not sure how to choose? Read the IGBT Discrete Selection Guide →
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SRC025H135CND
1350V / 25A IGBT
Features
- Low Saturation Voltage VCE(SAT)
- Low Switching Losses
Benefits
- Low Conduction for a High Efficiency
- Rugged Transient Reliability
- Low EMI
Applications
- Inductive cooking
- Inverterized microwave ovens
- Resonant converters
- Soft switching applications
Key Performance and Package Parameters
| Type | VCE | IC | VCE(SAT) (Tvj = 25°C, IC = 25 A, VGE = 15 V) | Tvjmax | Package |
|---|---|---|---|---|---|
| IGBT | 1350 V | 25A | 1.70 V | 175°C | TO247-3L |
Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector emitter voltage | VCE | Tvj = 25 °C | 1350 | V |
| DC collector current | IC | TC = 25 °C | 50 | A |
| TC = 100 °C | 25 | A | ||
| Pulsed collector current | ICpuls | 75 | A | |
| Maximum Diode forward current | IF | TC = 25 °C | 50 | A |
| TC = 100 °C | 25 | A | ||
| Diode pulsed current | IFpuls | 75 | A | |
| Gate Source Voltage | VGE | Tvj = 25 °C | ±20 | V |
| Junction temperature | Tvj | -55 to +175 | °C | |
| Storage temperature | Tstg | -55 to +175 | °C | |
| Temperature under switching conditions | Tvj OP | -40 to +150 | °C |
Thermal Resistance
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| IGBT Thermal resistance junction - case | RthJC | IGBT | — | 0.43 | — | °C/W |
Static Characteristics
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector emitter voltage | V(BR)CES | VGE = 0 V, IC = 0.5 mA, Tvj = 25 °C | 1350 | — | — | V |
| Collector emitter saturation voltage | VCEsat | VGE = 15 V, IC = 25 A, Tvj = 25 °C | — | 1.7 | — | V |
| VGE = 15 V, IC = 25 A, Tvj = 175 °C | — | 2.2 | — | V | ||
| Diode forward voltage | VF | VGE = 0 V, IC = 25 A, Tvj = 25 °C | — | 1.9 | — | V |
| VGE = 0 V, IC = 25 A, Tvj = 175 °C | — | 2.2 | — | V | ||
| Gate-emitter threshold voltage | VGE(th) | VCE = VGE, IC = 0.5 mA, Tvj = 25 °C | — | 6.1 | — | V |
| Zero gate voltage collector current | ICES | VCE = 600 V, VGE = 0 V, Tvj = 25 °C | — | — | 100 | µA |
| Gate-emitter leakage current | IGES | VGE = 20 V, VCE = 0 V | — | — | 200 | nA |
| IGES | VGE = -20 V, VCE = 0 V | -200 | — | — | nA |
Dynamic Characteristics
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Input capacitance | Cies | VGE = 0 V, VCE = 25 V, f = 100 KHz | — | 2297 | — | pF |
| Output capacitance | Coes | — | 33 | — | pF | |
| Reverse transfer capacitance | Cres | — | 10 | — | pF | |
| Gate charge | Qg | VGE = 0 V to 15 V, VCE = 500 V | — | 100 | — | nC |
Switching Characteristics
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Turn-off delay time | td(off) | Tvj = 25 °C, VCE = 600 V, IC = 25 A, VGE = 0 / 15 V, RG(on) = 10 Ω, RG(off) = 10 Ω | — | 93 | — | ns |
| Fall time | tf | — | 148 | — | ns | |
| Turn-off energy | Eoff | — | 0.94 | — | mJ | |
| Turn-off delay time | td(off) | Tvj = 175 °C, VCE = 600 V, IC = 25 A, VGE = 0 / 15 V, RG(on) = 10 Ω, RG(off) = 10 Ω | — | 115 | — | ns |
| Fall time | tf | — | 227 | — | ns | |
| Turn-off energy | Eoff | — | 1.32 | — | mJ |
Notes:
Confidential Shared Under NDA.