Specifications
- Package
- TO247-3L
- VCE_Max
- 1350 V
- IC
- 40 A
- VCE(sat)_Max
- 1.4 V
- Product Type
- RC-IGBT
- Tj
- 175 °C
- Application Level
- Consumer
- IC_Max @100°C
- 20 A
- ICP
- 60 A
- EOFF
- 1.57 mJ
- IF_Max @25°C
- 40 A
- TD(OFF)
- 185 ns
- Tf
- 150 ns
- Qg
- 114 nC
- IF,pulse
- 60 A
- Forward Voltage Drop VF
- 1.71 V
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SRC020H135CND
1350V / 20A IGBT
Features
- Low Saturation Voltage V_CE(SAT)
- Low Switching Losses
Benefits
- Low Conduction for a High Efficiency
- Rugged Transient Reliability
- Low EMI
Applications
- Inductive cooking
- Inverterized microwave ovens
- Resonant converters
- Soft switching applications
Key Performance and Package Parameters
| Type |
V_CE |
I_C (T_C = 100 °C) |
V_CE(SAT) (T_vj = 25°C, I_C = 20 A, V_GE = 15 V) |
T_vjmax |
Package |
| IGBT |
1350 V |
20A |
1.40 V |
175°C |
TO247-3L |
Absolute Maximum Ratings
| Parameter |
Symbol |
Conditions |
Value |
Unit |
| Collector emitter voltage |
V_CE |
T_vj = 25 °C |
1350 |
V |
| DC collector current |
I_C |
T_C = 25 °C |
40 |
A |
|
|
T_C = 100 °C |
20 |
A |
| Pulsed collector current |
I_Cpuls |
|
60 |
A |
| Maximum Diode forward current |
I_F |
T_C = 25 °C |
40 |
A |
|
|
T_C = 100 °C |
20 |
A |
| Diode pulsed current |
I_Fpuls |
|
60 |
A |
| Gate Source Voltage |
V_GE |
T_vj = 25 °C |
±20 |
V |
| Junction temperature |
T_vj |
|
-55 to +175 |
°C |
| Storage temperature |
T_stg |
|
-55 to +175 |
°C |
| Temperature under switching conditions |
T_vj OP |
|
-40 to +150 |
°C |
Thermal Resistance
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| IGBT Thermal resistance junction - case |
R_thJC |
IGBT |
— |
0.235 |
— |
°C/W |
Static Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Collector emitter voltage |
V_(BR)CES |
V_GE = 0 V, I_C = 0.5 mA, T_vj = 25 °C |
1350 |
— |
— |
V |
| Collector emitter saturation voltage |
V_CEsat |
V_GE = 15 V, I_C = 20 A, T_vj = 25 °C |
— |
1.40 |
— |
V |
|
|
V_GE = 15 V, I_C = 20 A, T_vj = 175 °C |
— |
1.71 |
— |
V |
| Diode forward voltage |
V_F |
V_GE = 0 V, I_C = 20 A, T_vj = 25 °C |
— |
1.71 |
— |
V |
|
|
V_GE = 0 V, I_C = 20 A, T_vj = 175 °C |
— |
1.90 |
— |
V |
| Gate-emitter threshold voltage |
V_GE(th) |
V_CE = V_GE, I_C = 0.5 mA, T_vj = 25 °C |
— |
6.18 |
— |
V |
| Zero gate voltage collector current |
I_CES |
V_CE = 600 V, V_GE = 0 V, T_vj = 25 °C |
— |
— |
100 |
µA |
| Gate-emitter leakage current |
I_GES |
V_GE = 20 V, V_CE = 0 V |
— |
— |
200 |
nA |
|
I_GES |
V_GE = -20 V, V_CE = 0 V |
-200 |
— |
— |
nA |
Dynamic Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Input capacitance |
C_ies |
V_GE = 0 V, V_CE = 25 V, f = 100 KHz |
— |
3276 |
— |
pF |
| Output capacitance |
C_oes |
|
— |
48 |
— |
pF |
| Reverse transfer capacitance |
C_res |
|
— |
16 |
— |
pF |
| Gate charge |
Q_g |
V_GE = 0 V to 15 V, I_C = 20 A, V_CE = 600 V |
— |
114 |
— |
nC |
Switching Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Turn-off delay time |
t_d(off) |
T_vj = 25 °C, V_CE = 600 V, I_C = 20 A, V_GE = 0 / 15 V, R_G(on) = 10 Ω, R_G(off) = 10 Ω |
— |
185 |
— |
ns |
| Fall time |
t_f |
|
— |
150 |
— |
ns |
| Turn-off energy |
E_off |
|
— |
1.10 |
— |
mJ |
| Turn-off delay time |
t_d(off) |
T_vj = 175 °C, V_CE = 600 V, I_C = 20 A, V_GE = 0 / 15 V, R_G(on) = 10 Ω, R_G(off) = 10 Ω |
— |
220 |
— |
ns |
| Fall time |
t_f |
|
— |
265 |
— |
ns |
| Turn-off energy |
E_off |
|
— |
1.57 |
— |
mJ |
Notes:
Confidential Shared Under NDA.
