产品详情
SRC020H135CND
中晶新源 SineSemi核心代理商
参数规格
- 封装
- TO247-3L
- 集射极电压 VCES
- 1350 V
- 集电极电流 IC
- 40 A
- 饱和压降 VCE(sat) 最大
- 1.4 V
- 产品类型
- RC-IGBT
- 结温 Tj
- 175 °C
- 应用等级
- Consumer
- 集电极电流 IC@100°C 最大
- 20 A
- 集电极峰值电流 ICP
- 60 A
- 关断损耗 Eoff
- 1.57 mJ
- 正向电流 IF@25°C 最大
- 40 A
- 关断延时 td(off)
- 185 ns
- 下降时间 tf
- 150 ns
- 总栅极电荷 Qg
- 114 nC
- 正向脉冲电流 IF,pulse
- 60 A
- 正向压降 VF
- 1.71 V
不确定怎么选？阅读《IGBT 单管选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SRC020H135CND
1350V / 20A IGBT
Features
- Low Saturation Voltage VCE(SAT)
- Low Switching Losses
Benefits
- Low Conduction for a High Efficiency
- Rugged Transient Reliability
- Low EMI
Applications
- Inductive cooking
- Inverterized microwave ovens
- Resonant converters
- Soft switching applications
Key Performance and Package Parameters
| Type | VCE | IC (TC = 100 °C) | VCE(SAT) (Tvj = 25°C, IC = 20 A, VGE = 15 V) | Tvjmax | Package |
|---|---|---|---|---|---|
| IGBT | 1350 V | 20A | 1.40 V | 175°C | TO247-3L |
Absolute Maximum Ratings
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector emitter voltage | VCE | Tvj = 25 °C | 1350 | V |
| DC collector current | IC | TC = 25 °C | 40 | A |
| TC = 100 °C | 20 | A | ||
| Pulsed collector current | ICpuls | 60 | A | |
| Maximum Diode forward current | IF | TC = 25 °C | 40 | A |
| TC = 100 °C | 20 | A | ||
| Diode pulsed current | IFpuls | 60 | A | |
| Gate Source Voltage | VGE | Tvj = 25 °C | ±20 | V |
| Junction temperature | Tvj | -55 to +175 | °C | |
| Storage temperature | Tstg | -55 to +175 | °C | |
| Temperature under switching conditions | Tvj OP | -40 to +150 | °C |
Thermal Resistance
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| IGBT Thermal resistance junction - case | RthJC | IGBT | — | 0.235 | — | °C/W |
Static Characteristics
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector emitter voltage | V(BR)CES | VGE = 0 V, IC = 0.5 mA, Tvj = 25 °C | 1350 | — | — | V |
| Collector emitter saturation voltage | VCEsat | VGE = 15 V, IC = 20 A, Tvj = 25 °C | — | 1.40 | — | V |
| VGE = 15 V, IC = 20 A, Tvj = 175 °C | — | 1.71 | — | V | ||
| Diode forward voltage | VF | VGE = 0 V, IC = 20 A, Tvj = 25 °C | — | 1.71 | — | V |
| VGE = 0 V, IC = 20 A, Tvj = 175 °C | — | 1.90 | — | V | ||
| Gate-emitter threshold voltage | VGE(th) | VCE = VGE, IC = 0.5 mA, Tvj = 25 °C | — | 6.18 | — | V |
| Zero gate voltage collector current | ICES | VCE = 600 V, VGE = 0 V, Tvj = 25 °C | — | — | 100 | µA |
| Gate-emitter leakage current | IGES | VGE = 20 V, VCE = 0 V | — | — | 200 | nA |
| IGES | VGE = -20 V, VCE = 0 V | -200 | — | — | nA |
Dynamic Characteristics
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Input capacitance | Cies | VGE = 0 V, VCE = 25 V, f = 100 KHz | — | 3276 | — | pF |
| Output capacitance | Coes | — | 48 | — | pF | |
| Reverse transfer capacitance | Cres | — | 16 | — | pF | |
| Gate charge | Qg | VGE = 0 V to 15 V, IC = 20 A, VCE = 600 V | — | 114 | — | nC |
Switching Characteristics
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Turn-off delay time | td(off) | Tvj = 25 °C, VCE = 600 V, IC = 20 A, VGE = 0 / 15 V, RG(on) = 10 Ω, RG(off) = 10 Ω | — | 185 | — | ns |
| Fall time | tf | — | 150 | — | ns | |
| Turn-off energy | Eoff | — | 1.10 | — | mJ | |
| Turn-off delay time | td(off) | Tvj = 175 °C, VCE = 600 V, IC = 20 A, VGE = 0 / 15 V, RG(on) = 10 Ω, RG(off) = 10 Ω | — | 220 | — | ns |
| Fall time | tf | — | 265 | — | ns | |
| Turn-off energy | Eoff | — | 1.57 | — | mJ |
Notes:
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