SRC020H135CND 产品图

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SRC020H135CND

中晶新源 SineSemi核心代理商

IGBT 单管消费TO247-3L
规格书下载

参数规格

封装
TO247-3L
集射极电压 VCES
1350 V
集电极电流 IC
40 A
饱和压降 VCE(sat) 最大
1.4 V
产品类型
RC-IGBT
结温 Tj
175 °C
应用等级
Consumer
集电极电流 IC@100°C 最大
20 A
集电极峰值电流 ICP
60 A
关断损耗 Eoff
1.57 mJ
正向电流 IF@25°C 最大
40 A
关断延时 td(off)
185 ns
下降时间 tf
150 ns
总栅极电荷 Qg
114 nC
正向脉冲电流 IF,pulse
60 A
正向压降 VF
1.71 V

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SRC020H135CND

1350V / 20A IGBT

Features
  • Low Saturation Voltage V_CE(SAT)
  • Low Switching Losses
Benefits
  • Low Conduction for a High Efficiency
  • Rugged Transient Reliability
  • Low EMI
Applications
  • Inductive cooking
  • Inverterized microwave ovens
  • Resonant converters
  • Soft switching applications
Key Performance and Package Parameters
Type V_CE I_C (T_C = 100 °C) V_CE(SAT) (T_vj = 25°C, I_C = 20 A, V_GE = 15 V) T_vjmax Package
IGBT 1350 V 20A 1.40 V 175°C TO247-3L
Absolute Maximum Ratings
Parameter Symbol Conditions Value Unit
Collector emitter voltage V_CE T_vj = 25 °C 1350 V
DC collector current I_C T_C = 25 °C 40 A
T_C = 100 °C 20 A
Pulsed collector current I_Cpuls 60 A
Maximum Diode forward current I_F T_C = 25 °C 40 A
T_C = 100 °C 20 A
Diode pulsed current I_Fpuls 60 A
Gate Source Voltage V_GE T_vj = 25 °C ±20 V
Junction temperature T_vj -55 to +175 °C
Storage temperature T_stg -55 to +175 °C
Temperature under switching conditions T_vj OP -40 to +150 °C
Thermal Resistance
Parameter Symbol Conditions Min Typ Max Unit
IGBT Thermal resistance junction - case R_thJC IGBT — 0.235 — °C/W

Static Characteristics

Parameter Symbol Conditions Min Typ Max Unit
Collector emitter voltage V_(BR)CES V_GE = 0 V, I_C = 0.5 mA, T_vj = 25 °C 1350 — — V
Collector emitter saturation voltage V_CEsat V_GE = 15 V, I_C = 20 A, T_vj = 25 °C — 1.40 — V
V_GE = 15 V, I_C = 20 A, T_vj = 175 °C — 1.71 — V
Diode forward voltage V_F V_GE = 0 V, I_C = 20 A, T_vj = 25 °C — 1.71 — V
V_GE = 0 V, I_C = 20 A, T_vj = 175 °C — 1.90 — V
Gate-emitter threshold voltage V_GE(th) V_CE = V_GE, I_C = 0.5 mA, T_vj = 25 °C — 6.18 — V
Zero gate voltage collector current I_CES V_CE = 600 V, V_GE = 0 V, T_vj = 25 °C — — 100 µA
Gate-emitter leakage current I_GES V_GE = 20 V, V_CE = 0 V — — 200 nA
I_GES V_GE = -20 V, V_CE = 0 V -200 — — nA

Dynamic Characteristics

Parameter Symbol Conditions Min Typ Max Unit
Input capacitance C_ies V_GE = 0 V, V_CE = 25 V, f = 100 KHz — 3276 — pF
Output capacitance C_oes — 48 — pF
Reverse transfer capacitance C_res — 16 — pF
Gate charge Q_g V_GE = 0 V to 15 V, I_C = 20 A, V_CE = 600 V — 114 — nC

Switching Characteristics

Parameter Symbol Conditions Min Typ Max Unit
Turn-off delay time t_d(off) T_vj = 25 °C, V_CE = 600 V, I_C = 20 A, V_GE = 0 / 15 V, R_G(on) = 10 Ω, R_G(off) = 10 Ω — 185 — ns
Fall time t_f — 150 — ns
Turn-off energy E_off — 1.10 — mJ
Turn-off delay time t_d(off) T_vj = 175 °C, V_CE = 600 V, I_C = 20 A, V_GE = 0 / 15 V, R_G(on) = 10 Ω, R_G(off) = 10 Ω — 220 — ns
Fall time t_f — 265 — ns
Turn-off energy E_off — 1.57 — mJ

Notes:

Confidential Shared Under NDA.

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