SRC030H135CND 产品图

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SRC030H135CND

中晶新源 SineSemi核心代理商

IGBT 单管消费TO247-3L
规格书下载

参数规格

封装
TO247-3L
集射极电压 VCES
1350 V
集电极电流 IC
60 A
饱和压降 VCE(sat) 最大
1.65 V
产品类型
RC-IGBT
结温 Tj
175 °C
应用等级
Consumer
集电极电流 IC@100°C 最大
30 A
开关频率
60 kHz
集电极峰值电流 ICP
90 A
关断损耗 Eoff
1.95 mJ
正向电流 IF@25°C 最大
60 A
关断延时 td(off)
165 ns
下降时间 tf
120 ns
总栅极电荷 Qg
114 nC
正向脉冲电流 IF,pulse
90 A
正向压降 VF
2 V

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SRC030H135CND

1350V / 30A IGBT

Features
  • Low Saturation Voltage VCE(SAT)
  • Low Switching Losses
Benefits
  • Low Conduction for a High Efficiency
  • Rugged Transient Reliability
  • Low EMI
Applications
  • Inductive cooking
  • Inverterized microwave ovens
  • Resonant converters
  • Soft switching applications
Key Performance and Package Parameters
Type VCE IC VCE(SAT) (Tvj = 25°C, IC = 30 A, VGE = 15 V) Tvjmax Package
IGBT 1350 V 30A 1.65 V 175°C TO247-3L
Absolute Maximum Ratings
Parameter Symbol Conditions Value Unit
Collector emitter voltage VCE Tvj = 25 °C 1350 V
DC collector current IC TC = 25 °C 60 A
TC = 100 °C 30 A
Pulsed collector current ICpuls 90 A
Maximum Diode forward current IF TC = 25 °C 60 A
TC = 100 °C 30 A
Diode pulsed current IFpuls 90 A
Gate Source Voltage VGE Tvj = 25 °C ±20 V
Junction temperature Tvj -55 to +175 °C
Storage temperature Tstg -55 to +175 °C
Temperature under switching conditions Tvj OP -40 to +150 °C
Thermal Resistance
Parameter Symbol Conditions Min Typ Max Unit
IGBT Thermal resistance junction - case RthJC IGBT — 0.235 — °C/W

Static Characteristics

Parameter Symbol Conditions Min Typ Max Unit
Collector emitter voltage V(BR)CES VGE = 0 V, IC = 0.5 mA, Tvj = 25 °C 1350 — — V
Collector emitter saturation voltage VCEsat VGE = 15 V, IC = 30 A, Tvj = 25 °C — 1.65 — V
VGE = 15 V, IC = 30 A, Tvj = 175 °C — 2.10 — V
Diode forward voltage VF VGE = 0 V, IC = 30 A, Tvj = 25 °C — 2.00 — V
VGE = 0 V, IC = 30 A, Tvj = 175 °C — 2.30 — V
Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 0.5 mA, Tvj = 25 °C — 6.0 — V
Zero gate voltage collector current ICES VCE = 600 V, VGE = 0 V, Tvj = 25 °C — — 100 µA
Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V — — 200 nA
IGES VGE = -20 V, VCE = 0 V -200 — — nA

Dynamic Characteristics

Parameter Symbol Conditions Min Typ Max Unit
Input capacitance Cies VGE = 0 V, VCE = 25 V, f = 100 KHz — 3276 — pF
Output capacitance Coes — 48 — pF
Reverse transfer capacitance Cres — 16 — pF
Gate charge Qg VGE = 0 V to 15 V, IC = 20 A, VCE = 600 V — 114 — nC

Switching Characteristics

Parameter Symbol Conditions Min Typ Max Unit
Turn-off delay time td(off) Tvj = 25 °C, VCE = 600 V, IC = 30 A, VGE = 0 / 15 V, RG(on) = 10 Ω, RG(off) = 10 Ω — 165 — ns
Fall time tf — 120 — ns
Turn-off energy Eoff — 1.95 — mJ
Turn-off delay time td(off) Tvj = 175 °C, VCE = 600 V, IC = 30 A, VGE = 0 / 15 V, RG(on) = 10 Ω, RG(off) = 10 Ω — 200 — ns
Fall time tf — 230 — ns
Turn-off energy Eoff — 2.50 — mJ

Notes:

Confidential Shared Under NDA.

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