Discrete IGBTs are single-packaged insulated-gate bipolar transistors that combine MOSFET-like gate control with the low conduction drop of bipolar devices, suited to small/medium-power applications needing flexible circuit design — VFDs, motor drives and switching supplies. Compared with MOSFETs, IGBTs typically offer a lower conduction drop at high current and high voltage, but have a turn-off tail current that must be weighed against conduction loss.
Reading the Key Parameters
- VCE_Max (collector-emitter voltage rating): listed parts span roughly 650V~1350V — derate against actual operating conditions, especially in motor-drive applications with bus voltage variation.
- IC (rated collector current): listed parts span roughly 15A~150A, the baseline current spec; the usable value should be further derated for ambient temperature, switching frequency and thermal conditions.
- VCE(sat)_Max (conduction drop): listed parts run roughly 1.4V~2.2V — lower values cut conduction loss but usually come with a longer turn-off tail, so the two should be weighed together against the application's switching frequency.
- Vth (gate threshold voltage): listed parts run roughly 5.8V~6.5V, notably higher than typical MOSFET thresholds — the drive circuit's on/off levels must match this to avoid false or incomplete turn-on.
- Package: listed parts are mainly in T1, T3 and TO247-3L; package sets the thermal path and mounting method, with higher-current parts generally needing larger packages paired with a heatsink.
Three Steps to Select
- Set the VCE class with derating margin against bus voltage and operating conditions;
- Confirm IC covers the actual load current with margin, accounting for ambient temperature and thermal conditions;
- Weigh VCE(sat) against turn-off tail loss based on switching frequency, and confirm the drive levels match Vth.
Common Pitfalls
- Ordering on the room-temperature IC rating alone without a second derating pass for actual junction temperature and switching frequency;
- Assuming lower VCE(sat) is always better while overlooking the longer tail time it usually brings, which can raise switching loss in high-frequency use;
- Reusing MOSFET-style gate-drive voltage levels without checking IGBT's higher Vth requirement, resulting in incomplete turn-on.
More parts can be filtered by VCE, IC, package and other criteria in the online selector; submit a part inquiry for specific fit questions.