Specifications
- Package
- TO247-3L
- IC
- 53 A
- VCE(sat)_Max
- 2.2 V
- Tj
- 175 °C
- IC_Max @100°C
- 33 A
Not sure how to choose? Read the IGBT Discrete Selection Guide →
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SIF030H065CHD
650V / 30A IGBT
Package: TO247-3L
Features
- High Input Impedance
- Low Saturation Voltage VCE(SAT)
- Low Switching Losses
Benefits
- Low Conduction for a High Efficiency
- Rugged Transient Reliability
- Low EMI
Applications
- Welding
- PFC
- ZCS-converters
Key Performance and Package Parameters
| Type |
VCE |
IC |
VCE(SAT) (TA = 25°C, IC = 30A, VGE = 15V) |
TJ(max) |
Package |
| IGBT |
650 V |
30A |
1.77 V |
175°C |
TO247-3L |
Thermal Resistance
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| IGBT Thermal resistance junction-case |
Rth(JC) |
IGBT |
— |
— |
0.78 |
°C/W |
| Diode Thermal resistance junction-case |
Rth(JC) |
Diode |
— |
— |
2.05 |
°C/W |
Absolute Maximum Ratings
| Parameter |
Symbol |
Conditions |
Value |
Unit |
| Collector emitter voltage |
VCE |
TA = 25°C |
650 |
V |
| DC collector current, limited by TJ(max) |
IC |
TA = 25°C |
53 |
A |
|
|
TA = 100°C |
33 |
A |
| Pulsed collector current, limited by TJ(max) |
IC(PLS) |
|
90 |
A |
| Maximum Diode forward current, limited by TJ(max) |
IF |
TA = 25°C |
30 |
A |
|
|
TA = 100°C |
20 |
A |
| Diode pulsed current, limited by TJ(max) |
IF(PLS) |
|
60 |
A |
| Gate Source Voltage |
VGS |
|
±20 |
V |
| Power dissipation |
Ptot |
TC = 25°C |
192 |
W |
|
|
TC = 100°C |
96 |
W |
| Junction temperature |
TJ |
|
-55 to +175 |
°C |
| Storage temperature |
TSTG |
|
-55 to +175 |
°C |
| Temperature under switching conditions |
TA, UP |
|
-40 to +150 |
°C |
Static Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Collector emitter voltage |
V(BR)CES |
VGE = 0V, IC = 0.2mA, TA = 25°C |
650 |
— |
— |
V |
| Collector emitter saturation voltage |
VCE(sat) |
VGE = 15V, IC = 30A, TA = 25°C |
— |
1.77 |
2.20 |
V |
|
|
VGE = 15V, IC = 30A, TA = 150°C |
— |
2.12 |
— |
V |
| Diode forward voltage |
VF |
VGE = 0V, IC = 15A, TA = 25°C |
— |
1.91 |
2.25 |
V |
|
|
VGE = 0V, IC = 15A, TA = 150°C |
— |
2.08 |
— |
V |
| Gate-emitter threshold voltage |
VGE(th) |
VGE = VCE, IC = 0.3mA, TA = 25°C |
3.2 |
4.0 |
4.8 |
V |
| Zero gate voltage collector current |
ICES |
VCE = 650V, VGE = 0V, TA = 25°C |
— |
— |
100 |
µA |
| Gate-emitter leakage current |
IGES |
VGE = 20V, VCE = 0V |
— |
— |
200 |
nA |
|
|
VGE = -20V, VCE = 0V |
-200 |
— |
— |
nA |
Dynamic Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Input capacitance |
Cies |
VCE = 0V |
— |
1090 |
— |
pF |
| Output capacitance |
Coes |
VCE = 25V, f = 1000kHz |
— |
54 |
— |
pF |
| Reverse transfer capacitance |
Cres |
|
— |
8 |
— |
pF |
| Gate charge |
Qg |
VGE = 0V to 15V, IC = 30A, VCE = 520V |
— |
36 |
— |
nC |
Switching Characteristics
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Turn-on delay time |
td(on) |
TC = 25°C |
— |
22 |
— |
ns |
| Rise time |
tr |
|
— |
22 |
— |
ns |
| Turn-off delay time |
td(off) |
VCC = 400V, |
— |
75 |
— |
ns |
| Fall time |
tf |
IC = 15A, |
— |
25 |
— |
ns |
| Turn-on energy |
Eon |
VGE = 0/15V, |
— |
0.15 |
— |
mJ |
| Turn-off energy |
Eoff |
RG(on) = 23Ω, RG(off) = 23Ω |
— |
0.16 |
— |
mJ |
| Total switching energy |
Ets |
|
— |
0.31 |
— |
mJ |
| Turn-on delay time |
td(on) |
TC = 150°C |
— |
20 |
— |
ns |
| Rise time |
tr |
|
— |
20 |
— |
ns |
| Turn-off delay time |
td(off) |
VCC = 400V, |
— |
80 |
— |
ns |
| Fall time |
tf |
IC = 15A, |
— |
45 |
— |
ns |
| Turn-on energy |
Eon |
VGE = 0/15V, |
— |
0.22 |
— |
mJ |
| Turn-off energy |
Eoff |
RG(on) = 23Ω, RG(off) = 23Ω |
— |
0.21 |
— |
mJ |
| Total switching energy |
Ets |
|
— |
0.43 |
— |
mJ |
