Specifications
- Package
- SOT-23
- Configuration
- N
- VDS_Max
- 60 V
- ID
- 0.33 A
- RDS(ON)_Max @VGS=10V
- 2000 mΩ
- Automotive (Y/N)
- N
- VGS(th)_Typ
- 1.6 V
- RDS(ON)_Typ @VGS=10V
- 1500 mΩ
- RDS(ON)_Typ @VGS=4.5V
- 1700 mΩ
- RDS(ON)_Max @VGS=4.5V
- 2400 mΩ
- VGS_Max
- ±20 V
- Tj
- 150 °C
- Ciss_Typ
- 19 pF
- Coss_Typ
- 7.2 pF
- Crss_Typ
- 3.3 pF
- Qg_Typ
- 0.8 nC
- ESD
- Yes
- MPQ
- 3000 pcs
- MOQ
- 30000 pcs
- App: General Switch
- Y
Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →
Package & Schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
2N7002KM
60V N-Channel Enhancement Mode Power MOSFET
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 60 V |
2.0 Ω @ VGS = 10V |
0.33 A |
|
2.4 Ω @ VGS = 4.5V |
|
SOT-23
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| 2N7002KM |
SOT-23 |
7002 |
7" Tape&Reel |
3,000 |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
60 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID @ TA = 25°C |
0.33 |
A |
|
ID @ TA = 70°C |
0.26 |
A |
| Pulsed Drain Current (2) |
IDM |
1.3 |
A |
| Power Dissipation |
PD @ TA = 25°C |
0.48 |
W |
|
PD @ TA = 70°C |
0.31 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +150 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
200 |
260 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
60 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 60V, VGS = 0V |
— |
— |
1.0 |
µA |
|
|
TJ = 125°C |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±10 |
µA |
On Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VGS = VDS, ID = 250µA |
1.0 |
1.6 |
2.5 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 0.30A |
— |
1.5 |
2.0 |
Ω |
|
|
VGS = 4.5V, ID = 0.20A |
— |
1.7 |
2.4 |
Ω |
| Forward Transconductance |
gfs |
VDS = 5.0V, ID = 0.20A |
— |
335 |
— |
mS |
| Diode Forward Voltage |
VSD |
IS = 115mA, VGS = 0V |
— |
0.85 |
1.2 |
V |
Dynamic Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
|
— |
19 |
— |
pF |
| Output Capacitance |
Coss |
VDS = 30V, VGS = 0V, f = 1MHz |
— |
7.2 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
3.3 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
412 |
— |
Ω |
Switching Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
|
— |
2.8 |
— |
ns |
| Rise Time |
tr |
VGS = 10V, VDS = 30V |
— |
2.2 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
ID = 0.30A, RGEN = 3.0Ω |
— |
13 |
— |
ns |
| Fall Time |
tf |
|
— |
5.4 |
— |
ns |
Gate Charge Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = 10V) |
Qg |
VDS = 30V, ID = 0.30A |
— |
0.80 |
— |
nC |
| Total Gate Charge (VGS = 4.5V) |
Qg |
|
— |
0.42 |
— |
nC |
| Gate-Source Charge |
Qgs |
VGS = 10V |
— |
0.12 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
0.19 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
2.9 |
— |
V |
Drain-Source Diode Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Diode Forward Current |
IS |
TA = 25°C |
— |
— |
0.33 |
A |
Notes:
- This current is chip limited, which is calculated based on R_θJA.
- This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
- Device mounted on FR-4 substrate PC board with 2oz copper on 1inch square cooling area.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
