2N7002KM 产品图

产品详情

2N7002KM

中晶新源 SineSemi核心代理商

中低压 MOSFETSOT-23
规格书下载

参数规格

封装
SOT-23
结构
N
漏源电压 VDS
60 V
漏极电流 ID
0.33 A
导通电阻 RDS(ON)@10V 最大
2000 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
1.6 V
导通电阻 RDS(ON)@10V 典型
1500 mΩ
导通电阻 RDS(ON)@4.5V 典型
1700 mΩ
导通电阻 RDS(ON)@4.5V 最大
2400 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
输入电容 Ciss 典型
19 pF
输出电容 Coss 典型
7.2 pF
反向传输电容 Crss 典型
3.3 pF
总栅极电荷 Qg 典型
0.8 nC
ESD
Yes
最小包装量
3000 pcs
最小订购量
30000 pcs
应用推荐-通用开关
Y

封装与电路符号

2N7002KM 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

2N7002KM

60V N-Channel Enhancement Mode Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max
60 V 2.0 Ω @ V_GS = 10V 0.33 A
2.4 Ω @ V_GS = 4.5V

SOT-23

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
2N7002KM SOT-23 7002 7" Tape&Reel 3,000
Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DS 60 V
Gate - Source Voltage V_GS ±20 V
Continuous Drain Current (V_GS = 10V) ^(1) I_D @ T_A = 25°C 0.33 A
I_D @ T_A = 70°C 0.26 A
Pulsed Drain Current ^(2) I_DM 1.3 A
Power Dissipation P_D @ T_A = 25°C 0.48 W
P_D @ T_A = 70°C 0.31 W
Junction & Storage Temperature Range T_J, T_STG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 200 260 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 250µA 60 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = 60V, V_GS = 0V — — 1.0 µA
T_J = 125°C — — 100 µA
Gate-Source Leakage Current I_GSS V_GS = ±20V, V_DS = 0V — — ±10 µA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V_GS(th) V_GS = V_DS, I_D = 250µA 1.0 1.6 2.5 V
Static Drain-Source On-Resistance R_DS(on) V_GS = 10V, I_D = 0.30A — 1.5 2.0 Ω
V_GS = 4.5V, I_D = 0.20A — 1.7 2.4 Ω
Forward Transconductance g_fs V_DS = 5.0V, I_D = 0.20A — 335 — mS
Diode Forward Voltage V_SD I_S = 115mA, V_GS = 0V — 0.85 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance C_iss — 19 — pF
Output Capacitance C_oss V_DS = 30V, V_GS = 0V, f = 1MHz — 7.2 — pF
Reverse Transfer Capacitance C_rss — 3.3 — pF
Gate Resistance R_g V_GS = 0V, V_DS = 0V, f = 1MHz — 412 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time t_d(on) — 2.8 — ns
Rise Time t_r V_GS = 10V, V_DS = 30V — 2.2 — ns
Turn-Off Delay Time t_d(off) I_D = 0.30A, R_GEN = 3.0Ω — 13 — ns
Fall Time t_f — 5.4 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (V_GS = 10V) Q_g V_DS = 30V, I_D = 0.30A — 0.80 — nC
Total Gate Charge (V_GS = 4.5V) Q_g — 0.42 — nC
Gate-Source Charge Q_gs V_GS = 10V — 0.12 — nC
Gate-Drain Charge Q_gd — 0.19 — nC
Gate Plateau Voltage V_plateau — 2.9 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Diode Forward Current I_S T_A = 25°C — — 0.33 A

Notes:

  1. This current is chip limited, which is calculated based on R_θJA.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Device mounted on FR-4 substrate PC board with 2oz copper on 1inch square cooling area.
  4. Short duration pulse test used to minimize self-heating effect.
  5. Defined by design, not subject to production.
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