BSS138M 产品图

产品详情

BSS138M

中晶新源 SineSemi核心代理商

中低压 MOSFETSOT-23
规格书下载

参数规格

封装
SOT-23
结构
N
漏源电压 VDS
60 V
漏极电流 ID
0.33 A
导通电阻 RDS(ON)@10V 最大
2000 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
1.2 V
导通电阻 RDS(ON)@10V 典型
1500 mΩ
导通电阻 RDS(ON)@4.5V 典型
1500 mΩ
导通电阻 RDS(ON)@4.5V 最大
2100 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
输入电容 Ciss 典型
17 pF
输出电容 Coss 典型
4 pF
反向传输电容 Crss 典型
2 pF
总栅极电荷 Qg 典型
0.85 nC
ESD
Yes
最小包装量
3000 pcs
最小订购量
30000 pcs
应用推荐-通用开关
Y
导通电阻 RDS(ON)@2.5V 典型
2300 mΩ
导通电阻 RDS(ON)@2.5V 最大
3200 mΩ

不确定怎么选？阅读《中低压 MOSFET 选型指南》 →

封装与电路符号

BSS138M 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

BSS138M

60V N-Channel Enhancement Mode Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
60 V 2.0 Ω @ VGS = 10V 0.33 A
2.1 Ω @ VGS = 4.5V
3.2 Ω @ VGS = 2.5V

SOT-23

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
BSS138M SOT-23 S138 7" Tape&Reel 3,000
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 60 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TA = 25°C 0.33 A
ID @ TA = 70°C 0.26 A
Pulsed Drain Current (2) IDM 1.3 A
Power Dissipation PD @ TA = 25°C 0.48 W
PD @ TA = 70°C 0.31 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 200 260 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 — — V
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±10 µA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 0.8 1.2 1.6 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 0.30A — 1.5 2.0 Ω
VGS = 4.5V, ID = 0.20A — 1.5 2.1 Ω
VGS = 2.5V, ID = 0.10A — 2.3 3.2 Ω
Forward Transconductance gfs VDS = 5.0V, ID = 0.20A — 425 — mS
Diode Forward Voltage VSD IS = 0.30A, VGS = 0V — 0.90 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss — 17 — pF
Output Capacitance Coss VDS = 30V, VGS = 0V, f = 1MHz — 4.0 — pF
Reverse Transfer Capacitance Crss — 2.0 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 172 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) — 2.4 — ns
Rise Time tr VGS = 10V, VDS = 30V — 4.1 — ns
Turn-Off Delay Time td(off) ID = 0.30A, RGEN = 3.0Ω — 16 — ns
Fall Time tf — 11.7 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 30V, ID = 0.30A — 0.85 — nC
Total Gate Charge (VGS = 4.5V) Qg — 0.42 — nC
Gate-Source Charge Qgs VGS = 10V — 0.16 — nC
Gate-Drain Charge Qgd — 0.10 — nC
Gate Plateau Voltage Vplateau — 2.5 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Diode Forward Current IS TA = 25°C — — 0.33 A

Notes:

  1. This current is chip limited, which is calculated based on R_θJA.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Device mounted on FR-4 substrate PC board with 2oz copper on 1inch square cooling area.
  4. Short duration pulse test used to minimize self-heating effect.
  5. Defined by design, not subject to production.
2N7002KM封装SOT-23漏极电流 ID0.33 A2N7002KMQ封装SOT-23漏极电流 ID0.33 ABSS138MQ封装SOT-23漏极电流 ID0.33 A2N7002KM6封装SOT-363漏极电流 ID0.26 A2N7002KM3封装SOT-323漏极电流 ID0.24 ABSS138KM3封装SOT-323漏极电流 ID0.24 A