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BSS138MQ

中晶新源 SineSemi核心代理商

中低压 MOSFET车规SOT-23

参数规格

封装
SOT-23
结构
N
漏源电压 VDS
60 V
漏极电流 ID
0.33 A
导通电阻 RDS(ON)@10V 最大
2000 mΩ
车规 (Y/N)
Y
阈值电压 VGS(th) 典型
1.2 V
导通电阻 RDS(ON)@10V 典型
1500 mΩ
导通电阻 RDS(ON)@4.5V 典型
1700 mΩ
导通电阻 RDS(ON)@4.5V 最大
2400 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
输入电容 Ciss 典型
17 pF
输出电容 Coss 典型
4 pF
反向传输电容 Crss 典型
2 pF
总栅极电荷 Qg 典型
0.85 nC

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

BSS138MQ

60V N-Channel Enhancement Mode Power MOSFET

Sinesemi Automotive MOSFET — AEC-Qualified, PPAP Capable

Product Summary
VDS RDS(ON), max ID, max
60 V 2.0 Ω @ VGS = 10V 0.33 A
2.4 Ω @ VGS = 4.5V

SOT-23

Features
  • High Density Cell Design for Low RDS(ON)
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High-Saturation Current Capability
  • ESD Protected up to 2.0kV(HBM)
  • AEC-Q101 Qualified, PPAP Capable
Applications
  • General Automotive Applications
Mechanical Data
  • Green Molding Compound
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
BSS138MQ SOT-23 S138Q 7" Tape&Reel 3,000
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 60 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID TA = 25°C: 0.33 A
TA = 70°C: 0.26 A
Pulsed Drain Current (2) IDM 1.3 A
Power Dissipation PD TA = 25°C: 0.48 W
TA = 70°C: 0.31 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (3) R_θJA 200 260 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 — — V
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±10 µA
On Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.8 1.2 1.6 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 300mA — 1.5 2.0 Ω
VGS = 4.5V, ID = 200mA — 1.7 2.4 Ω
Forward Transconductance gfs VDS = 5.0V, ID = 200mA — 425 — mS
Diode Forward Voltage VSD IS = 300mA, VGS = 0V — 0.90 1.2 V
Dynamic Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 30V, VGS = 0V, f = 1MHz — 17 — pF
Output Capacitance Coss — 4.0 — pF
Reverse Transfer Capacitance Crss — 2.0 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 172 — Ω
Switching Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VDD = 10V, VGS = 30V — 2.4 — ns
Rise Time tr ID = 300mA, RGEN = 3.0Ω — 4.1 — ns
Turn-Off Delay Time td(off) — 16 — ns
Fall Time tf — 11.7 — ns
Gate Charge Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDD = 30V, ID = 300mA — 0.85 — nC
Total Gate Charge (VGS = 4.5V) Qg — 0.42 — nC
Gate-Source Charge Qgs VGS = 10V — 0.16 — nC
Gate-Drain Charge Qgd — 0.10 — nC
Gate Plateau Voltage Vplateau — 2.5 — V
Drain-Source Diode Characteristics (5)
Parameter Symbol Test Condition Min Typ Max Unit
Diode Forward Current IS TA = 25°C — — 0.33 A

Notes:

  1. This current is chip limited, which is calculated based on RθJA.
  2. This current is calculated on single pulse with 10µs Single Pulse.
  3. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  4. Short duration pulse test used to minimize self-healing effect.
  5. Defined by design; not subject to production.
2N7002KM封装SOT-23漏极电流 ID0.33 A2N7002KMQ封装SOT-23漏极电流 ID0.33 ABSS138M封装SOT-23漏极电流 ID0.33 A2N7002KM6封装SOT-363漏极电流 ID0.26 A2N7002KM3封装SOT-323漏极电流 ID0.24 ABSS138KM3封装SOT-323漏极电流 ID0.24 A