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Product Detail

BSS138M

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsSOT-23
Download Datasheet

Specifications

Package
SOT-23
Configuration
N
VDS_Max
60 V
ID
0.33 A
RDS(ON)_Max @VGS=10V
2000 mΩ
Automotive (Y/N)
N
VGS(th)_Typ
1.2 V
RDS(ON)_Typ @VGS=10V
1500 mΩ
RDS(ON)_Typ @VGS=4.5V
1500 mΩ
RDS(ON)_Max @VGS=4.5V
2100 mΩ
VGS_Max
±20 V
Tj
150 °C
Ciss_Typ
17 pF
Coss_Typ
4 pF
Crss_Typ
2 pF
Qg_Typ
0.85 nC
ESD
Yes
MPQ
3000 pcs
MOQ
30000 pcs
App: General Switch
Y
RDS(ON)_Typ @VGS=2.5V
2300 mΩ
RDS(ON)_Max @VGS=2.5V
3200 mΩ

Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →

Package & Schematic

BSS138M package outline, pin configuration and schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

BSS138M

60V N-Channel Enhancement Mode Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
60 V 2.0 Ω @ VGS = 10V 0.33 A
2.1 Ω @ VGS = 4.5V
3.2 Ω @ VGS = 2.5V

SOT-23

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
BSS138M SOT-23 S138 7" Tape&Reel 3,000
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 60 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TA = 25°C 0.33 A
ID @ TA = 70°C 0.26 A
Pulsed Drain Current (2) IDM 1.3 A
Power Dissipation PD @ TA = 25°C 0.48 W
PD @ TA = 70°C 0.31 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 200 260 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 60 — — V
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±10 µA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 0.8 1.2 1.6 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 0.30A — 1.5 2.0 Ω
VGS = 4.5V, ID = 0.20A — 1.5 2.1 Ω
VGS = 2.5V, ID = 0.10A — 2.3 3.2 Ω
Forward Transconductance gfs VDS = 5.0V, ID = 0.20A — 425 — mS
Diode Forward Voltage VSD IS = 0.30A, VGS = 0V — 0.90 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss — 17 — pF
Output Capacitance Coss VDS = 30V, VGS = 0V, f = 1MHz — 4.0 — pF
Reverse Transfer Capacitance Crss — 2.0 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 172 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) — 2.4 — ns
Rise Time tr VGS = 10V, VDS = 30V — 4.1 — ns
Turn-Off Delay Time td(off) ID = 0.30A, RGEN = 3.0Ω — 16 — ns
Fall Time tf — 11.7 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 30V, ID = 0.30A — 0.85 — nC
Total Gate Charge (VGS = 4.5V) Qg — 0.42 — nC
Gate-Source Charge Qgs VGS = 10V — 0.16 — nC
Gate-Drain Charge Qgd — 0.10 — nC
Gate Plateau Voltage Vplateau — 2.5 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Diode Forward Current IS TA = 25°C — — 0.33 A

Notes:

  1. This current is chip limited, which is calculated based on R_θJA.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Device mounted on FR-4 substrate PC board with 2oz copper on 1inch square cooling area.
  4. Short duration pulse test used to minimize self-heating effect.
  5. Defined by design, not subject to production.
2N7002KMID0.33 AAutomotive (Y/N)N2N7002KMQID0.33 AVGS(th)_Typ1.6 VBSS138MQID0.33 AAutomotive (Y/N)Y2N7002KM3ID0.24 AAutomotive (Y/N)NBSS138KM3ID0.24 AAutomotive (Y/N)NOXT133N06APackageSOT-23RDS(ON)_Max @VGS=10V94 mΩ