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SiC Devices
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SiC (silicon carbide) is a wide-bandgap semiconductor material. SiC MOSFETs and Schottky diodes offer lower conduction loss, faster switching and higher temperature tolerance than silicon counterparts, suited to high-efficiency, high-power-density power supplies and new-energy applications.
- Rdson rises far less with temperature than silicon devices — evaluate actual loss at maximum junction temperature
- Fast switching brings higher dv/dt, requiring driver and EMC design to keep pace
- Reverse-recovery behavior is superior to silicon, suiting high-frequency hard-switching topologies
- Cost remains higher than equivalent silicon parts — weigh system-level efficiency gains against the premium