Product Detail
SCD6A65BU2
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Automotive (Y/N)
- N
- Package
- TO252-2L
- Tj
- 175 °C
- VRRM
- 650 V
- IF
- 6 A
- Qc_Typ
- 17 nC
- C
- 332 pF
- Ec
- 4.3 mJ
- MPQ
- 2500 pcs
- MOQ
- 25000 pcs
Not sure how to choose? Read the SiC SBD Selection Guide →
Package & Schematic
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SCD6A65BU2
650V SiC Schottky Diode
Product Summary
| VRRM | IF | TJ,max | Qc |
|---|---|---|---|
| 650 V | 6.0 A | 175°C | 17.0 nC |
TO252-2L
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V |
| Surge Peak Reverse Voltage | VRSM | 650 | V |
| DC Blocking Voltage | VDC | 650 | V |
| Continuous Forward Current (TC = 150°C) | IF | 6.0 | A |
| Repetitive Peak Forward Surge Current (TC = 25°C, tp=10ms, Half Sine Wave) | IFRM | 40 | A |
| Non-Repetitive Peak Forward Surge Current (TC = 25°C, tp=10ms, Half Sine Wave) | IFSM | 65 | A |
| Non-Repetitive Peak Forward Surge Current (TC = 25°C, tp=10s, Pulse) | IF,Max | 520 | A |
| Power Dissipation (TC = 25°C) | Ptot | 136 | W |
| Power Dissipation (TC = 110°C) | Ptot | 56 | W |
| Junction & Storage Temperature Range | TJ, TSTG | -55 ~ +175 | °C |
Thermal Characteristics
| Parameter | Symbol | Typ | Max | Unit |
|---|---|---|---|---|
| Thermal Resistance, Junction-to-Case | R_θJC | 1.78 | — | °C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Forward Voltage | VF | IF = 6.0A, TJ = 25°C | — | 1.4 | 1.7 | V |
| IF = 6.0A, TJ = 175°C | — | 1.75 | 2.00 | V | ||
| Reverse Current | IR | VR = 650V, TJ = 25°C | — | 1.0 | 5.0 | µA |
| VR = 650V, TJ = 175°C | — | 10 | 30 | µA | ||
| Total Capacitive Charge | QC | VR = 400V, TJ = 25°C | — | 17 | — | nC |
| Total Capacitance | C | VR = 0V, TJ = 25°C, f = 1MHz | — | 332 | — | pF |
| VR = 200V, TJ = 25°C, f = 1MHz | — | 33 | — | pF | ||
| VR = 400V, TJ = 25°C, f = 1MHz | — | 28 | — | pF | ||
| Capacitance Stored Energy | EC | VR = 400V | — | 4.3 | — | µJ |