Product Detail
SCD4A65BU2
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Automotive (Y/N)
- N
- Package
- TO252-2L
- Tj
- 175 °C
- VRRM
- 650 V
- IF
- 4 A
- Qc_Typ
- 9.5 nC
- C
- 185 pF
- Ec
- 2.4 mJ
- MPQ
- 2500 pcs
- MOQ
- 25000 pcs
Not sure how to choose? Read the SiC SBD Selection Guide →
Package & Schematic
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SCD4A65BU2
650V SiC Schottky Diode
Product Summary
| VRRM | IF | TJ,max | Qc |
|---|---|---|---|
| 650 V | 4.8 A | 175°C | 9.5 nC |
TO252-2L
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Repetitive Peak Reverse Voltage | VRRM | 650 | V |
| Surge Peak Reverse Voltage | VRSM | 650 | V |
| DC Blocking Voltage | VDC | 650 | V |
| Continuous Forward Current (TC = 150°C) | IF | 4.8 | A |
| Repetitive Peak Forward Surge Current (TC = 25°C, tp=10ms, Half Sine Wave) | IFRM | 20 | A |
| Non-Repetitive Peak Forward Surge Current (TC = 25°C, tp=10ms, Half Sine Wave) | IFSM | 26 | A |
| Non-Repetitive Peak Forward Surge Current (TC = 25°C, tp=10s, Pulse) | IF,Max | 200 | A |
| I²t value (TC = 25°C, tp=10ms) | I²t | 3.3 | A²s |
| Power Dissipation (TC = 25°C) | Ptot | 76.5 | W |
| Power Dissipation (TC = 110°C) | Ptot | 33.2 | W |
| Junction & Storage Temperature Range | TJ, TSTG | -55 ~ +175 | °C |
Thermal Characteristics
| Parameter | Symbol | Typ | Max | Unit |
|---|---|---|---|---|
| Thermal Resistance, Junction-to-Case | R_θJC | 1.96 | — | °C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Forward Voltage | VF | IF = 4.0A, TJ = 25°C | — | 1.5 | 1.8 | V |
| IF = 4.0A, TJ = 175°C | — | 1.8 | 2.0 | V | ||
| Reverse Current | IR | VR = 650V, TJ = 25°C | — | 1.0 | 20 | µA |
| VR = 650V, TJ = 175°C | — | 12 | 100 | µA | ||
| Total Capacitive Charge | QC | VR = 400V, TJ = 25°C | — | 9.5 | — | nC |
| Total Capacitance | C | VR = 0V, TJ = 25°C, f = 1MHz | — | 185 | — | pF |
| VR = 200V, TJ = 25°C, f = 1MHz | — | 19.0 | — | pF | ||
| VR = 400V, TJ = 25°C, f = 1MHz | — | 16.7 | — | pF | ||
| Capacitance Stored Energy | EC | VR = 400V | — | 2.4 | — | µJ |