SCD4A65BU2 产品图

产品详情

SCD4A65BU2

中晶新源 SineSemi核心代理商

SiC SBDTO252-2L
规格书下载

参数规格

车规 (Y/N)
N
封装
TO252-2L
结温 Tj
175 °C
反向重复峰值电压 VRRM
650 V
正向电流 IF
4 A
电容电荷 Qc 典型
9.5 nC
结电容 C
185 pF
电容储能 Ec
2.4 mJ
最小包装量
2500 pcs
最小订购量
25000 pcs

不确定怎么选？阅读《SiC SBD 选型指南》 →

封装与电路符号

SCD4A65BU2 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SCD4A65BU2

650V SiC Schottky Diode

Product Summary
VRRM IF TJ,max Qc
650 V 4.8 A 175°C 9.5 nC

TO252-2L

Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 650 V
Surge Peak Reverse Voltage VRSM 650 V
DC Blocking Voltage VDC 650 V
Continuous Forward Current (TC = 150°C) IF 4.8 A
Repetitive Peak Forward Surge Current (TC = 25°C, tp=10ms, Half Sine Wave) IFRM 20 A
Non-Repetitive Peak Forward Surge Current (TC = 25°C, tp=10ms, Half Sine Wave) IFSM 26 A
Non-Repetitive Peak Forward Surge Current (TC = 25°C, tp=10s, Pulse) IF,Max 200 A
I²t value (TC = 25°C, tp=10ms) I²t 3.3 A²s
Power Dissipation (TC = 25°C) Ptot 76.5 W
Power Dissipation (TC = 110°C) Ptot 33.2 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Case R_θJC 1.96 — °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Parameter Symbol Test Condition Min Typ Max Units
Forward Voltage VF IF = 4.0A, TJ = 25°C — 1.5 1.8 V
IF = 4.0A, TJ = 175°C — 1.8 2.0 V
Reverse Current IR VR = 650V, TJ = 25°C — 1.0 20 µA
VR = 650V, TJ = 175°C — 12 100 µA
Total Capacitive Charge QC VR = 400V, TJ = 25°C — 9.5 — nC
Total Capacitance C VR = 0V, TJ = 25°C, f = 1MHz — 185 — pF
VR = 200V, TJ = 25°C, f = 1MHz — 19.0 — pF
VR = 400V, TJ = 25°C, f = 1MHz — 16.7 — pF
Capacitance Stored Energy EC VR = 400V — 2.4 — µJ
SCD10A65BU2正向电流 IF10 A电容电荷 Qc 典型28 nCSCD6A65BU2正向电流 IF6 A电容电荷 Qc 典型17 nCSCD8A65BU2正向电流 IF8 A电容电荷 Qc 典型22 nC