产品详情
SCD4A65BU2
中晶新源 SineSemi核心代理商
参数规格
- 车规 (Y/N)
- N
- 封装
- TO252-2L
- 结温 Tj
- 175 °C
- 反向重复峰值电压 VRRM
- 650 V
- 正向电流 IF
- 4 A
- 电容电荷 Qc 典型
- 9.5 nC
- 结电容 C
- 185 pF
- 电容储能 Ec
- 2.4 mJ
- 最小包装量
- 2500 pcs
- 最小订购量
- 25000 pcs
封装与电路符号
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SCD4A65BU2
650V SiC Schottky Diode
Product Summary
| V_RRM | I_F | T_J,max | Q_c |
|---|---|---|---|
| 650 V | 4.8 A | 175°C | 9.5 nC |
TO252-2L
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Repetitive Peak Reverse Voltage | V_RRM | 650 | V |
| Surge Peak Reverse Voltage | V_RSM | 650 | V |
| DC Blocking Voltage | V_DC | 650 | V |
| Continuous Forward Current (T_C = 150°C) | I_F | 4.8 | A |
| Repetitive Peak Forward Surge Current (T_C = 25°C, tp=10ms, Half Sine Wave) | I_FRM | 20 | A |
| Non-Repetitive Peak Forward Surge Current (T_C = 25°C, tp=10ms, Half Sine Wave) | I_FSM | 26 | A |
| Non-Repetitive Peak Forward Surge Current (T_C = 25°C, tp=10s, Pulse) | I_F,Max | 200 | A |
| I²t value (T_C = 25°C, tp=10ms) | I²t | 3.3 | A²s |
| Power Dissipation (T_C = 25°C) | P_tot | 76.5 | W |
| Power Dissipation (T_C = 110°C) | P_tot | 33.2 | W |
| Junction & Storage Temperature Range | T_J, T_STG | -55 ~ +175 | °C |
Thermal Characteristics
| Parameter | Symbol | Typ | Max | Unit |
|---|---|---|---|---|
| Thermal Resistance, Junction-to-Case | R_θJC | 1.96 | — | °C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Forward Voltage | V_F | I_F = 4.0A, T_J = 25°C | — | 1.5 | 1.8 | V |
| I_F = 4.0A, T_J = 175°C | — | 1.8 | 2.0 | V | ||
| Reverse Current | I_R | V_R = 650V, T_J = 25°C | — | 1.0 | 20 | µA |
| V_R = 650V, T_J = 175°C | — | 12 | 100 | µA | ||
| Total Capacitive Charge | Q_C | V_R = 400V, T_J = 25°C | — | 9.5 | — | nC |
| Total Capacitance | C | V_R = 0V, T_J = 25°C, f = 1MHz | — | 185 | — | pF |
| V_R = 200V, T_J = 25°C, f = 1MHz | — | 19.0 | — | pF | ||
| V_R = 400V, T_J = 25°C, f = 1MHz | — | 16.7 | — | pF | ||
| Capacitance Stored Energy | E_C | V_R = 400V | — | 2.4 | — | µJ |