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SiC MOSFET Discretes

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GRECON's SiC MOSFET discretes are discrete-package silicon-carbide power switches focused on the 1200V voltage class, suited to high-efficiency power supplies, on-board chargers and new-energy conversion where switching loss and thermal performance matter.

VDSS rated voltage must cover the application's maximum operating voltage plus margin
RDS(on) directly sets conduction loss — check heat dissipation against full-load current
Rth(J-C) junction-to-case thermal resistance reflects heat-dissipation capability and bounds sustainable power dissipation
Package form must match the PCB layout and thermal design

Learn more: SiC MOSFET Discretes Selection Guide →

GCV016MC120SGT1

GRECON

VDSS (V): 1200
RDS(on) (mΩ): 16
Rth(J-C) (K/W): 0.23
Package: -

GCV016MC120SGT1N

GRECON

VDSS (V): 1200
RDS(on) (mΩ): 16
Rth(J-C) (K/W): 0.23
Package: -

GCV045MC120SGT1

GRECON

VDSS (V): 1200
RDS(on) (mΩ): 45
Rth(J-C) (K/W): 0.38
Package: -

GCV045MC120SGT1N

GRECON

VDSS (V): 1200
RDS(on) (mΩ): 45
Rth(J-C) (K/W): 0.38
Package: -

GCV060MC120SGT1N

GRECON

VDSS (V): 1200
RDS(on) (mΩ): -
Rth(J-C) (K/W): -
Package: -

GCV080MC120SGT1

GRECON

VDSS (V): 1200
RDS(on) (mΩ): 80
Rth(J-C) (K/W): 0.86
Package: -

GCV080MC120SGT1N

GRECON

VDSS (V): 1200
RDS(on) (mΩ): 80
Rth(J-C) (K/W): 0.86
Package: -

	Brand
GCV016MC120SGT1	GRECON	1200	16	0.23	-
GCV016MC120SGT1N	GRECON	1200	16	0.23	-
GCV045MC120SGT1	GRECON	1200	45	0.38	-
GCV045MC120SGT1N	GRECON	1200	45	0.38	-
GCV060MC120SGT1N	GRECON	1200	-	-	-
GCV080MC120SGT1	GRECON	1200	80	0.86	-
GCV080MC120SGT1N	GRECON	1200	80	0.86	-