GRECON's SiC MOSFET discretes are discrete-package silicon-carbide power switches focused on the 1200V class, suited to high-efficiency power supplies, on-board chargers and new-energy conversion where switching loss and thermal performance matter. Compared with silicon devices, SiC's intrinsic material properties give lower conduction and switching loss, keeping efficiency high at higher switching frequencies and offering a chance to shrink magnetics and heatsink volume.
Reading the Key Parameters
- VDSS (blocking voltage): listed parts are uniformly rated at 1200V, matching mainstream new-energy and industrial power-supply bus voltages. Still leave margin above bus voltage for switching spikes rather than judging on steady-state voltage alone.
- RDS(on) (on-resistance): listed parts span roughly 16–80mΩ. Lower values cut conduction loss but usually mean larger die area and higher cost — check heat dissipation against full-load current.
- Rth(J-C) (junction-to-case thermal resistance): listed data runs roughly 0.23–0.86K/W. Lower values mean stronger heat dissipation and directly bound the sustainable power a given thermal design can support.
- Package: package sets the mounting method and thermal path — match it to the PCB layout and heatsink interface dimensions.
Three Steps to Select
- Confirm the VDSS margin covers the application's maximum operating voltage;
- Calculate conduction loss from RDS(on) against full-load current and the allowed temperature rise;
- Compare Rth(J-C) against the thermal design's resistance budget to confirm sustained power capability.
Common Pitfalls
- Assuming a SiC device can reuse a silicon gate-drive circuit unchanged, overlooking its higher di/dt, dv/dt drive requirements and need for negative gate-voltage protection;
- Comparing RDS(on) numbers alone without accounting for how much resistance rises at actual junction temperature;
- Underestimating high-speed switching's sensitivity to PCB layout parasitic inductance, leading to unexpected voltage spikes.
More parts can be filtered by RDS(on), package and other criteria in the online selector; submit a part inquiry for specific fit questions.
Related guide: SiC MOSFETs Selection Guide