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Gate Driver (Isolated)
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Isolated gate driver ICs use isolation structures (magnetic, optical, etc.) to electrically separate control signals from the power stage, protecting the control side and suppressing common-mode noise in high-voltage/high-power switching circuits.
- Isolation voltage rating must cover the system's safety requirements (functional vs. reinforced isolation)
- CMTI is especially critical in high dv/dt applications
- Drive current and propagation delay must match the driven device's switching-speed needs
- Built-in dead-time control and UVLO protection affect peripheral circuit design
SineSemi
- Power Switch
- IGBT/SiC/GaN/MOSFET
- Features
- Split output
- IOH/IOL (A)
- 10.0/10.0
- Output V (V)
- 6~30
- Input VCC (V)
- 3~18
- Prop.Delay (ns)
- 60
SineSemi
- Power Switch
- IGBT/SiC/GaN/MOSFET
- Features
- Split output
- IOH/IOL (A)
- 10.0/10.0
- Output V (V)
- 9~30
- Input VCC (V)
- 3~18
- Prop.Delay (ns)
- 60
SineSemi
- Power Switch
- IGBT/SiC/GaN/MOSFET
- Features
- Split output
- IOH/IOL (A)
- 10.0/10.0
- Output V (V)
- 13~30
- Input VCC (V)
- 3~18
- Prop.Delay (ns)
- 60
SineSemi
- Power Switch
- IGBT/SiC/GaN/MOSFET
- Features
- Split output
- IOH/IOL (A)
- 10.0/10.0
- Output V (V)
- 4~30
- Input VCC (V)
- 3~18
- Prop.Delay (ns)
- 60
SineSemi
- Power Switch
- IGBT/SiC/GaN/MOSFET
- Features
- Split output
- IOH/IOL (A)
- 10.0/10.0
- Output V (V)
- 6~30
- Input VCC (V)
- 3~18
- Prop.Delay (ns)
- 60
SineSemi
- Power Switch
- IGBT/SiC/GaN/MOSFET
- Features
- Split output
- IOH/IOL (A)
- 10.0/10.0
- Output V (V)
- 9~30
- Input VCC (V)
- 3~18
- Prop.Delay (ns)
- 60
SineSemi
- Power Switch
- IGBT/SiC/GaN/MOSFET
- Features
- Split output
- IOH/IOL (A)
- 10.0/10.0
- Output V (V)
- 13~30
- Input VCC (V)
- 3~18
- Prop.Delay (ns)
- 60
SineSemi
- Power Switch
- IGBT/SiC/GaN/MOSFET
- Features
- Split output
- IOH/IOL (A)
- 10.0/10.0
- Output V (V)
- 4~30
- Input VCC (V)
- 3~18
- Prop.Delay (ns)
- 60
SineSemi
- Power Switch
- IGBT/SiC
- Features
- -
- IOH/IOL (A)
- 3.0/6.0
- Output V (V)
- 13~30
- Input VCC (V)
- 3~5.5
- Prop.Delay (ns)
- 90
SineSemi
- Power Switch
- IGBT/SiC
- Features
- -
- IOH/IOL (A)
- 3.0/6.0
- Output V (V)
- 13~30
- Input VCC (V)
- 3~5.5
- Prop.Delay (ns)
- 90
SineSemi
- Power Switch
- IGBT/SiC
- Features
- -
- IOH/IOL (A)
- 3.0/6.0
- Output V (V)
- 13~30
- Input VCC (V)
- 3~5.5
- Prop.Delay (ns)
- 90
SineSemi
- Power Switch
- IGBT/SiC
- Features
- -
- IOH/IOL (A)
- 3.0/6.0
- Output V (V)
- 13~30
- Input VCC (V)
- 3~5.5
- Prop.Delay (ns)
- 90
SineSemi
- Power Switch
- IGBT/SiC
- Features
- -
- IOH/IOL (A)
- 12.0/12.0
- Output V (V)
- 13~30
- Input VCC (V)
- 3~5.5
- Prop.Delay (ns)
- 90
SineSemi
- Power Switch
- IGBT/SiC
- Features
- -
- IOH/IOL (A)
- 12.0/12.0
- Output V (V)
- 13~30
- Input VCC (V)
- 3~5.5
- Prop.Delay (ns)
- 90
SineSemi
- Power Switch
- IGBT/SiC
- Features
- -
- IOH/IOL (A)
- 12.0/12.0
- Output V (V)
- 13~30
- Input VCC (V)
- 3~5.5
- Prop.Delay (ns)
- 90
SineSemi
- Power Switch
- IGBT/SiC
- Features
- -
- IOH/IOL (A)
- 12.0/12.0
- Output V (V)
- 13~30
- Input VCC (V)
- 3~5.5
- Prop.Delay (ns)
- 90
| Brand | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SINEG5350RABCA-AQ | SineSemi | IGBT/SiC/GaN/MOSFET | Split output | 10.0/10.0 | 6~30 | 3~18 | 60 | - | - | - | 150 | 3000 | -40 ~ 125 | SOP8 | Reel/2500 |
| SINEG5350RBBCA-AQ | SineSemi | IGBT/SiC/GaN/MOSFET | Split output | 10.0/10.0 | 9~30 | 3~18 | 60 | - | - | - | 150 | 3000 | -40 ~ 125 | SOP8 | Reel/2500 |
| SINEG5350RDBCA-AQ | SineSemi | IGBT/SiC/GaN/MOSFET | Split output | 10.0/10.0 | 13~30 | 3~18 | 60 | - | - | - | 150 | 3000 | -40 ~ 125 | SOP8 | Reel/2500 |
| SINEG5350RGBCA-AQ | SineSemi | IGBT/SiC/GaN/MOSFET | Split output | 10.0/10.0 | 4~30 | 3~18 | 60 | - | - | - | 150 | 3000 | -40 ~ 125 | SOP8 | Reel/2500 |
| SINEG5350SABCA-AQ | SineSemi | IGBT/SiC/GaN/MOSFET | Split output | 10.0/10.0 | 6~30 | 3~18 | 60 | - | - | - | 150 | 3000 | -40 ~ 125 | SOP8 | Reel/2500 |
| SINEG5350SBBCA-AQ | SineSemi | IGBT/SiC/GaN/MOSFET | Split output | 10.0/10.0 | 9~30 | 3~18 | 60 | - | - | - | 150 | 3000 | -40 ~ 125 | SOP8 | Reel/2500 |
| SINEG5350SDBCA-AQ | SineSemi | IGBT/SiC/GaN/MOSFET | Split output | 10.0/10.0 | 13~30 | 3~18 | 60 | - | - | - | 150 | 3000 | -40 ~ 125 | SOP8 | Reel/2500 |
| SINEG5350SGBCA-AQ | SineSemi | IGBT/SiC/GaN/MOSFET | Split output | 10.0/10.0 | 4~30 | 3~18 | 60 | - | - | - | 150 | 3000 | -40 ~ 125 | SOP8 | Reel/2500 |
| SINEG5851NHCG-AQ | SineSemi | IGBT/SiC | - | 3.0/6.0 | 13~30 | 3~5.5 | 90 | - | - | - | 150 | 5000 | -40 ~ 125 | SOP16W | Reel/1500 |
| SINEG5851NHCG-DG | SineSemi | IGBT/SiC | - | 3.0/6.0 | 13~30 | 3~5.5 | 90 | - | - | - | 150 | 5000 | -40 ~ 125 | SOP16W | Reel/1500 |
| SINEG5852SHCG-AQ | SineSemi | IGBT/SiC | - | 3.0/6.0 | 13~30 | 3~5.5 | 90 | Y | - | Y | 150 | 5000 | -40 ~ 125 | SOP16W | Reel/1500 |
| SINEG5852SHCG-DG | SineSemi | IGBT/SiC | - | 3.0/6.0 | 13~30 | 3~5.5 | 90 | Y | - | Y | 150 | 5000 | -40 ~ 125 | SOP16W | Reel/1500 |
| SINEG5932SHOCG-AQ | SineSemi | IGBT/SiC | - | 12.0/12.0 | 13~30 | 3~5.5 | 90 | Y | Y | Y | 150 | 5000 | -40 ~ 125 | SOP16W | Reel/1500 |
| SINEG5932SHOCG-DG | SineSemi | IGBT/SiC | - | 12.0/12.0 | 13~30 | 3~5.5 | 90 | Y | Y | Y | 150 | 5000 | -40 ~ 125 | SOP16W | Reel/1500 |
| SINEG5992SHCG-AQ | SineSemi | IGBT/SiC | - | 12.0/12.0 | 13~30 | 3~5.5 | 90 | Y | - | Y | 150 | 5000 | -40 ~ 125 | SOP16W | Reel/1500 |
| SINEG5992SHCG-DG | SineSemi | IGBT/SiC | - | 12.0/12.0 | 13~30 | 3~5.5 | 90 | Y | - | Y | 150 | 5000 | -40 ~ 125 | SOP16W | Reel/1500 |