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Product Detail

SS065N045FIA

SineSemi 中晶新源Core Authorized Distributor

IGBT ModulesIndustrialFlow2
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Specifications

Package
Flow2
VCE_Max
650 V
IC_Max
450 A
VCE(sat)_Typ
1.6 V
Status
MP
Qualification
Industrial
Configuration
3-Level
Tj
175 °C
VCE(sat)_Max
2.2 V
VF_Typ
1.23 V
VF_Max
2.05 V

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Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SS065N045FIA

650 V / 450 A 3-Level NPC Inverter Module

Features
  • Neutral Point Clamped Three-Level Inverter Module
  • Low Inductive Layout
  • Solderable Pins
Benefits
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Low Conduction Losses Over Temperature
Applications
  • Solar Inverters
  • Uninterruptable Power Supplies Systems

Package: Flow2

Absolute Maximum Ratings (@ TA = 25°C)
Parameter Symbol Value Unit
OUTER IGBT (Q1, Q4)
Collector-Emitter Voltage VCES 650 V
Gate-Emitter Voltage VGE ±20 V
Continuous Collector Current @ TC = 80°C, Tj = 175°C IC 270 A
Pulsed Collector Current @ Tj = 175°C ICP 810 A
Junction Temperature Tj -40 to +175 °C
INNER IGBT (Q2, Q3)
Collector-Emitter Voltage VCES 650 V
Gate-Emitter Voltage VGE ±20 V
Continuous Collector Current @ TC = 80°C, Tj = 175°C IC 293 A
Pulsed Collector Current @ Tj = 175°C ICP 880 A
Junction Temperature Tj -40 to +175 °C
DIODE (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage VRRM 650 V
Continuous Forward Current @ TC = 80°C, Tj = 175°C IF 188 A
Repetitive Peak Forward Current @ Tj = 175°C IFRM 563 A
I²t-value @ VR = 0 V, tP = 10 ms, Tvj = 150°C I²t 1800 A²s
DIODE (D5, D6)
Peak Repetitive Reverse Voltage VRRM 650 V
Continuous Forward Current @ TC = 80°C, Tj = 175°C IF 230 A
Repetitive Peak Forward Current @ Tj = 175°C IFRM 690 A
I²t-value @ VR = 0 V, tP = 10 ms, Tvj = 150°C I²t 9800 A²s
Insulation
Isolation Test Voltage, t = 1 s, 50 Hz Viso 4000 VRMS
Temperature
Storage Temperature Tstg -40 to +125 °C
Operating Temperature Top -40 to +150 °C

Electrical Characteristics (@ Tj = 25°C, unless otherwise specified.)

OUTER IGBT (Q1, Q4)
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 450 A, Tj = 25°C — 1.6 2.2 V
VGE = 15 V, IC = 450 A, Tj = 150°C — 1.85 — V
Gate-Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 4 mA, Tj = 25°C 3.2 3.8 4.4 V
Total Gate Charge Qg VGE = ±15 V, VCE = 480 V, Tj = 25°C — 1.6 — µC
Gate-Source Leakage Current IGES VGE = 20 V, VCE = 0 V, Tj = 25°C — — 100 nA
Collector-Emitter Voltage V(BR)CES VGE = 0 V, Tj = 25°C 650 — — V
Collector-Emitter Cutoff Current ICES VCE = 650 V, VGE = 0 V, Tj = 25°C — — 100 µA
Input Capacitance Ciss VGE = 0 V, VCE = 20 V, f = 10 KHz — 24054 — pF
Output Capacitance Coss — 1942 — pF
Reverse Transfer Capacitance Crss — 140 — pF
Turn-on delay time td(on) VGE = -7/+15 V, VCE = 400 V, IC = 150 A, RG(on) = 9.4 Ω, RG(off) = 15.7 Ω, Tj = 25°C — 75 — ns
Tj = 150°C — 58 — ns
Rise time tr Tj = 25°C — 33 — ns
Tj = 150°C — 38 — ns
Turn-off delay time td(off) Tj = 25°C — 757 — ns
Tj = 150°C — 804 — ns
Fall time tf Tj = 25°C — 44 — ns
Tj = 150°C — 54 — ns
Turn-on Switching Loss Eon Tj = 25°C — 4.7 — mJ
Tj = 150°C — 7.2 — mJ
Turn-off Switching Loss Eoff Tj = 25°C — 2.6 — mJ
Tj = 150°C — 3.3 — mJ
Thermal Resistance - Chip-to-Heatsink RthJH Thermal grease, λ = 2.8 W/mK — 0.24 — °C/W
Thermal Resistance - Chip-to-Case RthJC — 0.16 — °C/W
NEUTRAL POINT DIODE (D5, D6)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage VF IF = 450 A, Tj = 25°C — 1.65 2.05 V
IF = 450 A, Tj = 150°C — 1.75 — V
Reverse Recovery Time TRR VGE = -7/+15 V, VCE = 400 V, IC = 150 A, Tj = 25°C — 173 — ns
Tj = 150°C — 215 — ns
Reverse Recovery Charge QRR Tj = 25°C — 8.68 — µC
Tj = 150°C — 20.4 — µC
Peak Reverse Recovery Current IRRM Tj = 25°C — 120 — A
Tj = 150°C — 184 — A
Reverse Recovery Energy ERR Tj = 25°C — 1.94 — mJ
Tj = 150°C — 4.55 — mJ
Thermal Resistance - Chip-to-Heatsink RthJH Thermal grease, λ = 2.8 W/mK — 0.29 — °C/W
Thermal Resistance - Chip-to-Case RthJC — 0.19 — °C/W
INNER IGBT (Q2, Q3)
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 450 A, Tj = 25°C — 1.28 1.8 V
VGE = 15 V, IC = 450 A, Tj = 150°C — 1.45 — V
Gate-Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 4 mA, Tj = 25°C 4.2 4.85 5.4 V
Total Gate Charge Qg VGE = ±15 V, VCE = 480 V, Tj = 25°C — 3.7 — µC
Gate-Source Leakage Current IGES VGE = 20 V, VCE = 0 V, Tj = 25°C — — 100 nA
Collector-Emitter Voltage V(BR)CES VGE = 0 V, Tj = 25°C 650 — — V
Collector-Emitter Cutoff Current ICES VCE = 650 V, VGE = 0 V, Tj = 25°C — — 100 µA
Input Capacitance Ciss VGE = 0 V, VCE = 20 V, f = 10 KHz — 46942 — pF
Output Capacitance Coss — 982 — pF
Reverse Transfer Capacitance Crss — 263 — pF
Turn-on delay time td(on) VGE = -7/+15 V, VCE = 400 V, IC = 150 A, RG(on) = 40 Ω, RG(off) = 40 Ω, Tj = 25°C — 826 — ns
Tj = 150°C — 689 — ns
Rise time tr Tj = 25°C — 149 — ns
Tj = 150°C — 180 — ns
Turn-off delay time td(off) Tj = 25°C — 3790 — ns
Tj = 150°C — 4167 — ns
Fall time tf Tj = 25°C — 118 — ns
Tj = 150°C — 108 — ns
Turn-on Switching Loss Eon Tj = 25°C — 15.9 — mJ
Tj = 150°C — 18.75 — mJ
Turn-off Switching Loss Eoff Tj = 25°C — 8.8 — mJ
Tj = 150°C — 9.3 — mJ
Thermal Resistance - Chip-to-Heatsink RthJH Thermal grease, λ = 2.8 W/mK — 0.28 — °C/W
Thermal Resistance - Chip-to-Case RthJC — 0.18 — °C/W
INVERSE DIODE (D1, D2, D3, D4)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage VF IF = 100 A, Tj = 25°C — 1.23 1.65 V
IF = 100 A, Tj = 150°C — 1.18 — V
IF = 200 A, Tj = 25°C — 1.58 — V
IF = 200 A, Tj = 150°C — 1.64 — V
Reverse Recovery Time TRR VGE = -7/+15 V, VCE = 400 V, IC = 150 A, Tj = 25°C — 363 — ns
Tj = 150°C — 436 — ns
Reverse Recovery Charge QRR Tj = 25°C — 6.48 — µC
Tj = 150°C — 10.6 — µC
Peak Reverse Recovery Current IRRM Tj = 25°C — 43.3 — A
Tj = 150°C — 48.1 — A
Reverse Recovery Energy ERR Tj = 25°C — 1.1 — mJ
Tj = 150°C — 1.78 — mJ
Thermal Resistance - Chip-to-Heatsink RthJH Thermal grease, λ = 2.8 W/mK — 0.41 — °C/W
Thermal Resistance - Chip-to-Case RthJC — 0.32 — °C/W
NTC-Thermistor
Parameter Symbol Min Typ Max Unit Conditions
Rated resistance R25 — 22 — kΩ TC = 25°C
Deviation of R100 ΔR/R -5 — 5 % TC = 100°C, R100 = 1486 Ω
Power Dissipation P25 — — 20 mW TNTC = 25°C
B-value B25/50 — 3950 — K B (25/50), tolerance ±3%
B-value B25/100 — 3998 — K B (25/100), tolerance ±3%
Module Characteristics
Parameter Symbol Min Typ Max Unit Conditions
Stray Inductance LCE — 17 — nH
Mounting Torque (Screw M5) M 3.0 — 5.0 N·m
Creepage distance — 12.7 — mm terminal to heatsink
Clearance — 12.7 — mm terminal to heatsink
CTI — ≥600 —
RTI — 130 — °C
Flatness of base plate — — 0.3 mm
Weight — 176.5 — g

Notes:

Confidential Shared Under NDA.

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