Product Detail

SS120N060FTCC

SineSemi 中晶新源Core Authorized Distributor

IGBT ModulesIndustrialEasy3b+BP

Download Datasheet

Specifications

Package: Easy3b+BP
VCE_Max: 1200 V
IC_Max: 600 A
VCE(sat)_Typ: 1.8 V
Status: MP
Qualification: Industrial
Configuration: 3-Level
Tj: 175 °C
VF_Typ: 1.8 V

Not sure how to choose? Read the IGBT Modules Selection Guide →

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SS120N060FTCC

1200 V / 600 A 3-Level NPC2 Inverter Module

Features

Neutral Point Clamped Three-Level Inverter Module
Low Inductive Layout
Solderable Pins

Benefits

Higher System Efficiency
Reduced Cooling Requirements
Low Conduction Losses Over Temperature

Applications

Energy storage applications
Three-level applications
High-frequency switching application
Solar applications

Package: Easy3b+BP

Absolute Maximum Ratings (@ T_A = 25°C)

Parameter	Symbol	Value	Unit
IGBT (Q1, Q4)
Collector-Emitter Voltage	V_CES	1200	V
Gate-Emitter Voltage	V_GE	±25	V
Positive Transient Gate-Emitter Voltage (T_pulse = 5 s, D < 0.10)		30	V
Continuous Collector Current	I_C	600	A
Pulsed Collector Current	I_CP	1200	A
IGBT (Q2, Q3)
Collector-Emitter Voltage	V_CES	750	V
Gate-Emitter Voltage	V_GE	±25	V
Positive Transient Gate-Emitter Voltage (T_pulse = 5 s, D < 0.10)		30	V
Continuous Collector Current	I_C	400	A
Pulsed Collector Current	I_CP	800	A
DIODE (D1)
Peak Repetitive Reverse Voltage	V_RRM	1200	V
Continuous Forward Current	I_F	300	A
Repetitive Peak Forward Current	I_FRM	600	A
DIODE (D4)
Peak Repetitive Reverse Voltage	V_RRM	1200	V
Continuous Forward Current	I_F	400	A
Repetitive Peak Forward Current	I_FRM	800	A
DIODE (D2, D3)
Peak Repetitive Reverse Voltage	V_RRM	750	V
Continuous Forward Current	I_F	100	A
Repetitive Peak Forward Current	I_FRM	200	A
DIODE (D5, D6)
Peak Repetitive Reverse Voltage	V_RRM	750	V
Continuous Forward Current	I_F	500	A
Repetitive Peak Forward Current	I_FRM	1000	A
Insulation
Isolation Test Voltage, t = 1 s, 50 Hz	V_iso	4000	V_RMS
Temperature
Storage Temperature	T_stg	-40 to +125	°C
Operating Temperature	T_vjop	-40 to +150	°C
Junction Temperature	T_j	-40 to +175	°C

Electrical Characteristics (@ T_j = 25°C, unless otherwise specified.)

IGBT (Q1, Q4)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Saturation Voltage	V_CE(sat)	V_GE = 15 V, I_C = 600 A, T_j = 25°C	—	1.80	—	V
		V_GE = 15 V, I_C = 600 A, T_j = 150°C	—	2.35	—	V
Gate-Emitter Threshold Voltage	V_GE(TH)	V_GE = V_CE, I_C = 9 mA, T_j = 25°C	—	5.50	—	V
Total Gate Charge	Q_g	V_GE = -7/+15 V, V_CE = 600 V, T_j = 25°C	—	3.49	—	µC
Gate-Source Leakage Current	I_GES	V_GE = ±25 V, V_CE = 0 V, T_j = 25°C	-100	—	100	nA
Collector-Emitter Voltage	V_(BR)CES	V_GE = 0 V, T_j = 25°C	1200	—	—	V
Collector-Emitter Cutoff Current	I_CES	V_CE = 1200 V, V_GE = 0 V, T_j = 25°C	—	—	100	µA
Input Capacitance	C_iss	V_GE = 0 V, V_CE = 30 V, f = 100 KHz, T_j = 25°C	—	66.4	—	nF
Output Capacitance	C_oss		—	1.77	—	nF
Reverse Transfer Capacitance	C_rss		—	0.19	—	nF
Turn-on Delay Time	t_d(on)	V_GE = -7/+15 V, V_DC+ = 470 V, V_DC- = 470 V, I_C = 300 A, R_G(on) = 2.0 Ω, R_G(off) = 0.5 Ω, T_j = 25°C	—	50	—	ns
		T_j = 150°C	—	100	—	ns
Rise Time	t_r	T_j = 25°C	—	40	—	ns
		T_j = 150°C	—	50	—	ns
Turn-off Delay Time	t_d(off)	T_j = 25°C	—	150	—	ns
		T_j = 150°C	—	225	—	ns
Fall Time	t_f	T_j = 25°C	—	160	—	ns
		T_j = 150°C	—	230	—	ns
Turn-on Switching Loss	E_on	T_j = 25°C	—	10.92	—	mJ
		T_j = 150°C	—	17.10	—	mJ
Turn-off Switching Loss	E_off	T_j = 25°C	—	12.66	—	mJ
		T_j = 150°C	—	19.36	—	mJ
Thermal Resistance - Chip-to-Case	R_thJC	Per IGBT	—	0.063	—	°C/W

DIODE (D5, D6)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Diode Forward Voltage	V_F	I_F = 500 A, T_j = 25°C	—	1.84	—	V
		I_F = 500 A, T_j = 150°C	—	1.98	—	V
Reverse Recovery Time	T_RR	V_GE = -7/+15 V, V_DC+ = 470 V, V_DC- = 470 V, I_C = 300 A, R_G(on) = 2.0 Ω, R_G(off) = 0.5 Ω, T_j = 25°C	—	160	—	ns
		T_j = 150°C	—	245	—	ns
Reverse Recovery Charge	Q_RR	T_j = 25°C	—	15.6	—	µC
		T_j = 150°C	—	38.0	—	µC
Peak Reverse Recovery Current	I_RRM	T_j = 25°C	—	250	—	A
		T_j = 150°C	—	315	—	A
Reverse Recovery Energy	E_REC	T_j = 25°C	—	5.50	—	mJ
		T_j = 150°C	—	10.98	—	mJ
Thermal Resistance - Chip-to-Case	R_thJC	Per diode	—	0.135	—	°C/W

IGBT (Q2, Q3)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Saturation Voltage	V_CE(sat)	V_GE = 15 V, I_C = 400 A, T_j = 25°C	—	1.50	—	V
		V_GE = 15 V, I_C = 400 A, T_j = 150°C	—	1.73	—	V
Gate-Emitter Threshold Voltage	V_GE(TH)	V_GE = V_CE, I_C = 9 mA, T_j = 25°C	—	4.10	—	V
Total Gate Charge	Q_g	V_GE = -7/+15 V, V_CE = 600 V, T_j = 25°C	—	0.96	—	µC
Gate-Source Leakage Current	I_GES	V_GE = ±25 V, V_CE = 0 V, T_j = 25°C	-100	—	100	nA
Collector-Emitter Voltage	V_(BR)CES	V_GE = 0 V, I_C = 250 µA, T_j = 25°C	750	—	—	V
Collector-Emitter Cutoff Current	I_CES	V_CE = 750 V, V_GE = 0 V, T_j = 25°C	—	—	100	µA
Input Capacitance	C_iss	V_GE = 0 V, V_CE = 30 V, f = 100 KHz, T_j = 25°C	—	14	—	nF
Output Capacitance	C_oss		—	0.79	—	nF
Reverse Transfer Capacitance	C_rss		—	0.10	—	nF
Turn-on Delay Time (Q3)	t_d(on)	V_GE = -7/+15 V, V_DC+ = 470 V, V_DC- = 470 V, I_C = 300 A, R_G(on) = 10 Ω, R_G(off) = 36 Ω, T_j = 25°C	—	35	—	ns
		T_j = 150°C	—	68	—	ns
Rise Time (Q3)	t_r	T_j = 25°C	—	30	—	ns
		T_j = 150°C	—	46	—	ns
Turn-off Delay Time (Q3)	t_d(off)	T_j = 25°C	—	980	—	ns
		T_j = 150°C	—	1550	—	ns
Fall Time (Q3)	t_f	T_j = 25°C	—	45	—	ns
		T_j = 150°C	—	53	—	ns
Turn-on Switching Loss (Q3)	E_on	T_j = 25°C	—	6.50	—	mJ
		T_j = 150°C	—	9.20	—	mJ
Turn-off Switching Loss (Q3)	E_off	T_j = 25°C	—	12.61	—	mJ
		T_j = 150°C	—	15.00	—	mJ
Turn-on Delay Time (Q2)	t_d(on)	T_j = 25°C	—	100	—	ns
		T_j = 150°C	—	115	—	ns
Rise Time (Q2)	t_r	T_j = 25°C	—	89	—	ns
		T_j = 150°C	—	105	—	ns
Turn-off Delay Time (Q2)	t_d(off)	T_j = 25°C	—	1050	—	ns
		T_j = 150°C	—	1480	—	ns
Fall Time (Q2)	t_f	T_j = 25°C	—	45	—	ns
		T_j = 150°C	—	98	—	ns
Turn-on Switching Loss (Q2)	E_on	T_j = 25°C	—	4.26	—	mJ
		T_j = 150°C	—	6.55	—	mJ
Turn-off Switching Loss (Q2)	E_off	T_j = 25°C	—	13.2	—	mJ
		T_j = 150°C	—	15.1	—	mJ
Thermal Resistance - Chip-to-Case	R_thJC	Per IGBT	—	0.140	—	°C/W

INVERSE DIODE (D1)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Diode Forward Voltage	V_F	I_F = 300 A, T_j = 25°C	—	1.81	—	V
		I_F = 300 A, T_j = 150°C	—	1.94	—	V
Reverse Recovery Time	T_RR	V_GE = -7/+15 V, V_DC+ = 470 V, V_DC- = 470 V, I_C = 300 A, R_G(on) = 10 Ω, R_G(off) = 36 Ω, T_j = 25°C	—	85	—	ns
		T_j = 150°C	—	343	—	ns
Reverse Recovery Charge	Q_RR	T_j = 25°C	—	14.2	—	µC
		T_j = 150°C	—	39.3	—	µC
Peak Reverse Recovery Current	I_RRM	T_j = 25°C	—	289	—	A
		T_j = 150°C	—	376	—	A
Reverse Recovery Energy	E_REC	T_j = 25°C	—	6.0	—	mJ
		T_j = 150°C	—	17.0	—	mJ
Thermal Resistance - Chip-to-Case	R_thJC	Per diode	—	0.119	—	°C/W

INVERSE DIODE (D4)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Diode Forward Voltage	V_F	I_F = 400 A, T_j = 25°C	—	1.89	—	V
		I_F = 400 A, T_j = 150°C	—	2.00	—	V
Reverse Recovery Time	T_RR	V_GE = -7/+15 V, V_DC+ = 470 V, V_DC- = 470 V, I_C = 300 A, R_G(on) = 10 Ω, R_G(off) = 36 Ω, T_j = 25°C	—	90	—	ns
		T_j = 150°C	—	300	—	ns
Reverse Recovery Charge	Q_RR	T_j = 25°C	—	15.4	—	µC
		T_j = 150°C	—	45.2	—	µC
Peak Reverse Recovery Current	I_RRM	T_j = 25°C	—	280	—	A
		T_j = 150°C	—	360	—	A
Reverse Recovery Energy	E_REC	T_j = 25°C	—	8.07	—	mJ
		T_j = 150°C	—	22.0	—	mJ
Thermal Resistance - Chip-to-Case	R_thJC	Per diode	—	0.102	—	°C/W

INVERSE DIODE (D2, D3)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Diode Forward Voltage	V_F	I_F = 100 A, T_j = 25°C	—	1.62	—	V
		I_F = 100 A, T_j = 150°C	—	1.68	—	V

NTC-Thermistor

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Rated resistance	R25	—	5	—	kΩ	T_C = 25°C
Deviation of R100	ΔR/R	-5	—	5	%	T_C = 100°C, R100 = 493 Ω
B-value	B25/50	—	3375	—	K

Module Characteristics

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Mounting Torque (Screw M5)	M	3.0	—	5.0	N·m
Creepage Distance		—	16.2	—	mm	terminal to heatsink
Clearance		—	15.2	—	mm	terminal to heatsink
CTI		—	≥600	—
Flatness of base plate		—	—	0.3	mm

Notes:

Confidential Shared Under NDA.

Specifications

Online Datasheet

SS120N060FTCC

1200 V / 600 A 3-Level NPC2 Inverter Module

Features

Benefits

Applications

Absolute Maximum Ratings (@ TA = 25°C)

Electrical Characteristics (@ Tj = 25°C, unless otherwise specified.)

IGBT (Q1, Q4)

DIODE (D5, D6)

IGBT (Q2, Q3)

INVERSE DIODE (D1)

INVERSE DIODE (D4)

INVERSE DIODE (D2, D3)

NTC-Thermistor

Module Characteristics

Related Parts

Absolute Maximum Ratings (@ T_A = 25°C)

Electrical Characteristics (@ T_j = 25°C, unless otherwise specified.)