SS120N060FTCC product image

Product Detail

SS120N060FTCC

SineSemi 中晶新源Core Authorized Distributor

IGBT ModulesIndustrialEasy3b+BP
Download Datasheet

Specifications

Package
Easy3b+BP
VCE_Max
1200 V
IC_Max
600 A
VCE(sat)_Typ
1.8 V
Status
MP
Qualification
Industrial
Configuration
3-Level
Tj
175 °C
VF_Typ
1.8 V

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SS120N060FTCC

1200 V / 600 A 3-Level NPC2 Inverter Module

Features
  • Neutral Point Clamped Three-Level Inverter Module
  • Low Inductive Layout
  • Solderable Pins
Benefits
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Low Conduction Losses Over Temperature
Applications
  • Energy storage applications
  • Three-level applications
  • High-frequency switching application
  • Solar applications

Package: Easy3b+BP

Absolute Maximum Ratings (@ T_A = 25°C)
Parameter Symbol Value Unit
IGBT (Q1, Q4)
Collector-Emitter Voltage V_CES 1200 V
Gate-Emitter Voltage V_GE ±25 V
Positive Transient Gate-Emitter Voltage (T_pulse = 5 s, D < 0.10) 30 V
Continuous Collector Current I_C 600 A
Pulsed Collector Current I_CP 1200 A
IGBT (Q2, Q3)
Collector-Emitter Voltage V_CES 750 V
Gate-Emitter Voltage V_GE ±25 V
Positive Transient Gate-Emitter Voltage (T_pulse = 5 s, D < 0.10) 30 V
Continuous Collector Current I_C 400 A
Pulsed Collector Current I_CP 800 A
DIODE (D1)
Peak Repetitive Reverse Voltage V_RRM 1200 V
Continuous Forward Current I_F 300 A
Repetitive Peak Forward Current I_FRM 600 A
DIODE (D4)
Peak Repetitive Reverse Voltage V_RRM 1200 V
Continuous Forward Current I_F 400 A
Repetitive Peak Forward Current I_FRM 800 A
DIODE (D2, D3)
Peak Repetitive Reverse Voltage V_RRM 750 V
Continuous Forward Current I_F 100 A
Repetitive Peak Forward Current I_FRM 200 A
DIODE (D5, D6)
Peak Repetitive Reverse Voltage V_RRM 750 V
Continuous Forward Current I_F 500 A
Repetitive Peak Forward Current I_FRM 1000 A
Insulation
Isolation Test Voltage, t = 1 s, 50 Hz V_iso 4000 V_RMS
Temperature
Storage Temperature T_stg -40 to +125 °C
Operating Temperature T_vjop -40 to +150 °C
Junction Temperature T_j -40 to +175 °C

Electrical Characteristics (@ T_j = 25°C, unless otherwise specified.)

IGBT (Q1, Q4)
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Saturation Voltage V_CE(sat) V_GE = 15 V, I_C = 600 A, T_j = 25°C — 1.80 — V
V_GE = 15 V, I_C = 600 A, T_j = 150°C — 2.35 — V
Gate-Emitter Threshold Voltage V_GE(TH) V_GE = V_CE, I_C = 9 mA, T_j = 25°C — 5.50 — V
Total Gate Charge Q_g V_GE = -7/+15 V, V_CE = 600 V, T_j = 25°C — 3.49 — µC
Gate-Source Leakage Current I_GES V_GE = ±25 V, V_CE = 0 V, T_j = 25°C -100 — 100 nA
Collector-Emitter Voltage V_(BR)CES V_GE = 0 V, T_j = 25°C 1200 — — V
Collector-Emitter Cutoff Current I_CES V_CE = 1200 V, V_GE = 0 V, T_j = 25°C — — 100 µA
Input Capacitance C_iss V_GE = 0 V, V_CE = 30 V, f = 100 KHz, T_j = 25°C — 66.4 — nF
Output Capacitance C_oss — 1.77 — nF
Reverse Transfer Capacitance C_rss — 0.19 — nF
Turn-on Delay Time t_d(on) V_GE = -7/+15 V, V_DC+ = 470 V, V_DC- = 470 V, I_C = 300 A, R_G(on) = 2.0 Ω, R_G(off) = 0.5 Ω, T_j = 25°C — 50 — ns
T_j = 150°C — 100 — ns
Rise Time t_r T_j = 25°C — 40 — ns
T_j = 150°C — 50 — ns
Turn-off Delay Time t_d(off) T_j = 25°C — 150 — ns
T_j = 150°C — 225 — ns
Fall Time t_f T_j = 25°C — 160 — ns
T_j = 150°C — 230 — ns
Turn-on Switching Loss E_on T_j = 25°C — 10.92 — mJ
T_j = 150°C — 17.10 — mJ
Turn-off Switching Loss E_off T_j = 25°C — 12.66 — mJ
T_j = 150°C — 19.36 — mJ
Thermal Resistance - Chip-to-Case R_thJC Per IGBT — 0.063 — °C/W
DIODE (D5, D6)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage V_F I_F = 500 A, T_j = 25°C — 1.84 — V
I_F = 500 A, T_j = 150°C — 1.98 — V
Reverse Recovery Time T_RR V_GE = -7/+15 V, V_DC+ = 470 V, V_DC- = 470 V, I_C = 300 A, R_G(on) = 2.0 Ω, R_G(off) = 0.5 Ω, T_j = 25°C — 160 — ns
T_j = 150°C — 245 — ns
Reverse Recovery Charge Q_RR T_j = 25°C — 15.6 — µC
T_j = 150°C — 38.0 — µC
Peak Reverse Recovery Current I_RRM T_j = 25°C — 250 — A
T_j = 150°C — 315 — A
Reverse Recovery Energy E_REC T_j = 25°C — 5.50 — mJ
T_j = 150°C — 10.98 — mJ
Thermal Resistance - Chip-to-Case R_thJC Per diode — 0.135 — °C/W
IGBT (Q2, Q3)
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Saturation Voltage V_CE(sat) V_GE = 15 V, I_C = 400 A, T_j = 25°C — 1.50 — V
V_GE = 15 V, I_C = 400 A, T_j = 150°C — 1.73 — V
Gate-Emitter Threshold Voltage V_GE(TH) V_GE = V_CE, I_C = 9 mA, T_j = 25°C — 4.10 — V
Total Gate Charge Q_g V_GE = -7/+15 V, V_CE = 600 V, T_j = 25°C — 0.96 — µC
Gate-Source Leakage Current I_GES V_GE = ±25 V, V_CE = 0 V, T_j = 25°C -100 — 100 nA
Collector-Emitter Voltage V_(BR)CES V_GE = 0 V, I_C = 250 µA, T_j = 25°C 750 — — V
Collector-Emitter Cutoff Current I_CES V_CE = 750 V, V_GE = 0 V, T_j = 25°C — — 100 µA
Input Capacitance C_iss V_GE = 0 V, V_CE = 30 V, f = 100 KHz, T_j = 25°C — 14 — nF
Output Capacitance C_oss — 0.79 — nF
Reverse Transfer Capacitance C_rss — 0.10 — nF
Turn-on Delay Time (Q3) t_d(on) V_GE = -7/+15 V, V_DC+ = 470 V, V_DC- = 470 V, I_C = 300 A, R_G(on) = 10 Ω, R_G(off) = 36 Ω, T_j = 25°C — 35 — ns
T_j = 150°C — 68 — ns
Rise Time (Q3) t_r T_j = 25°C — 30 — ns
T_j = 150°C — 46 — ns
Turn-off Delay Time (Q3) t_d(off) T_j = 25°C — 980 — ns
T_j = 150°C — 1550 — ns
Fall Time (Q3) t_f T_j = 25°C — 45 — ns
T_j = 150°C — 53 — ns
Turn-on Switching Loss (Q3) E_on T_j = 25°C — 6.50 — mJ
T_j = 150°C — 9.20 — mJ
Turn-off Switching Loss (Q3) E_off T_j = 25°C — 12.61 — mJ
T_j = 150°C — 15.00 — mJ
Turn-on Delay Time (Q2) t_d(on) T_j = 25°C — 100 — ns
T_j = 150°C — 115 — ns
Rise Time (Q2) t_r T_j = 25°C — 89 — ns
T_j = 150°C — 105 — ns
Turn-off Delay Time (Q2) t_d(off) T_j = 25°C — 1050 — ns
T_j = 150°C — 1480 — ns
Fall Time (Q2) t_f T_j = 25°C — 45 — ns
T_j = 150°C — 98 — ns
Turn-on Switching Loss (Q2) E_on T_j = 25°C — 4.26 — mJ
T_j = 150°C — 6.55 — mJ
Turn-off Switching Loss (Q2) E_off T_j = 25°C — 13.2 — mJ
T_j = 150°C — 15.1 — mJ
Thermal Resistance - Chip-to-Case R_thJC Per IGBT — 0.140 — °C/W
INVERSE DIODE (D1)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage V_F I_F = 300 A, T_j = 25°C — 1.81 — V
I_F = 300 A, T_j = 150°C — 1.94 — V
Reverse Recovery Time T_RR V_GE = -7/+15 V, V_DC+ = 470 V, V_DC- = 470 V, I_C = 300 A, R_G(on) = 10 Ω, R_G(off) = 36 Ω, T_j = 25°C — 85 — ns
T_j = 150°C — 343 — ns
Reverse Recovery Charge Q_RR T_j = 25°C — 14.2 — µC
T_j = 150°C — 39.3 — µC
Peak Reverse Recovery Current I_RRM T_j = 25°C — 289 — A
T_j = 150°C — 376 — A
Reverse Recovery Energy E_REC T_j = 25°C — 6.0 — mJ
T_j = 150°C — 17.0 — mJ
Thermal Resistance - Chip-to-Case R_thJC Per diode — 0.119 — °C/W
INVERSE DIODE (D4)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage V_F I_F = 400 A, T_j = 25°C — 1.89 — V
I_F = 400 A, T_j = 150°C — 2.00 — V
Reverse Recovery Time T_RR V_GE = -7/+15 V, V_DC+ = 470 V, V_DC- = 470 V, I_C = 300 A, R_G(on) = 10 Ω, R_G(off) = 36 Ω, T_j = 25°C — 90 — ns
T_j = 150°C — 300 — ns
Reverse Recovery Charge Q_RR T_j = 25°C — 15.4 — µC
T_j = 150°C — 45.2 — µC
Peak Reverse Recovery Current I_RRM T_j = 25°C — 280 — A
T_j = 150°C — 360 — A
Reverse Recovery Energy E_REC T_j = 25°C — 8.07 — mJ
T_j = 150°C — 22.0 — mJ
Thermal Resistance - Chip-to-Case R_thJC Per diode — 0.102 — °C/W
INVERSE DIODE (D2, D3)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage V_F I_F = 100 A, T_j = 25°C — 1.62 — V
I_F = 100 A, T_j = 150°C — 1.68 — V
NTC-Thermistor
Parameter Symbol Min Typ Max Unit Conditions
Rated resistance R25 — 5 — kΩ T_C = 25°C
Deviation of R100 ΔR/R -5 — 5 % T_C = 100°C, R100 = 493 Ω
B-value B25/50 — 3375 — K
Module Characteristics
Parameter Symbol Min Typ Max Unit Conditions
Mounting Torque (Screw M5) M 3.0 — 5.0 N·m
Creepage Distance — 16.2 — mm terminal to heatsink
Clearance — 15.2 — mm terminal to heatsink
CTI — ≥600 —
Flatness of base plate — — 0.3 mm

Notes:

Confidential Shared Under NDA.

GCP15GX120FTC5NPackageC5.0VCE_Max1200 VGCV300GT120FFH1HM_RPackageH1.1VCE_Max1200 VGCV300GT120FTH4HPackageH4.0VCE_Max1200 VGCV300GT120FTH5HPackageH5.0VCE_Max1200 VGCV300GT120FTH8TM_RPackageH8.0VCE_Max1200 VGCV450GT120FTH5HPackageH5.0VCE_Max1200 V