Product Detail

SS120N060FTC

SineSemi 中晶新源Core Authorized Distributor

IGBT ModulesIndustrialEasy3b+BP

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Specifications

Package: Easy3b+BP
VCE_Max: 1200 V
IC_Max: 600 A
VCE(sat)_Typ: 1.8 V
Status: MP
Qualification: Industrial
Configuration: 3-Level
Tj: 175 °C
VF_Typ: 1.9 V

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Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SS120N060FTC

1200 V / 600 A 3-Level NPC2 Inverter Module

Features

Neutral Point Clamped Three-Level Inverter Module
Low Inductive Layout
Solderable Pins

Benefits

Higher System Efficiency
Reduced Cooling Requirements
Low Conduction Losses Over Temperature

Applications

Solar Inverters
Uninterruptable Power Supplies Systems

Package: Easy3b+BP

Absolute Maximum Ratings (@ T_A = 25°C)

Parameter	Symbol	Value	Unit
IGBT (Q1, Q4)
Collector-Emitter Voltage	V_CES	1200	V
Gate-Emitter Voltage	V_GE	±25	V
Positive Transient Gate-Emitter Voltage (T_pulse = 5 s, D < 0.10)		30	V
Continuous Collector Current	I_C	600	A
Pulsed Collector Current	I_CP	1200	A
IGBT (Q2, Q3)
Collector-Emitter Voltage	V_CES	700	V
Gate-Emitter Voltage	V_GE	±25	V
Positive Transient Gate-Emitter Voltage (T_pulse = 5 s, D < 0.10)		30	V
Continuous Collector Current	I_C	400	A
Pulsed Collector Current	I_CP	800	A
DIODE (D1)
Peak Repetitive Reverse Voltage	V_RRM	1200	V
Continuous Forward Current	I_F	300	A
Repetitive Peak Forward Current	I_FRM	600	A
DIODE (D4)
Peak Repetitive Reverse Voltage	V_RRM	1200	V
Continuous Forward Current	I_F	400	A
Repetitive Peak Forward Current	I_FRM	800	A
DIODE (D2, D3)
Peak Repetitive Reverse Voltage	V_RRM	700	V
Continuous Forward Current	I_F	100	A
Repetitive Peak Forward Current	I_FRM	200	A
DIODE (D5, D6)
Peak Repetitive Reverse Voltage	V_RRM	700	V
Continuous Forward Current	I_F	500	A
Repetitive Peak Forward Current	I_FRM	1000	A
Insulation
Isolation Test Voltage, t = 1 min, 50 Hz	V_iso	4000	V_RMS
Temperature
Storage Temperature	T_stg	-40 to +125	°C
Operating Temperature	T_vjop	-40 to +150	°C
Junction Temperature	T_j	-40 to +175	°C

Electrical Characteristics (@ T_j = 25°C, unless otherwise specified.)

IGBT (Q1, Q4)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Saturation Voltage	V_CE(sat) (terminal)	V_GE = 15 V, I_C = 600 A, T_j = -40°C	—	1.66	—	V
		T_j = 25°C	—	1.82	—	V
		T_j = 150°C	—	2.30	—	V
Gate-Emitter Threshold Voltage	V_GE(TH)	V_GE = V_CE, I_C = 9 mA, T_j = 25°C	5.0	5.50	6.0	V
Total Gate Charge	Q_g	V_GE = -7/+15 V, V_CE = 600 V, T_j = 25°C	—	3.17	—	µC
Gate-Source Leakage Current	I_GES	V_GE = ±25 V, V_CE = 0 V, T_j = 25°C	-100	—	100	nA
Collector-Emitter Voltage	V_(BR)CES	V_GE = 0 V, I_C = 1 mA, T_j = -40°C	—	1200*	—	V
		T_j = 25°C	1200	—	—	V
		I_C = 2 mA, T_j = 150°C	—	1310*	—	V
Collector-Emitter Cutoff Current	I_CES	V_CE = 1200 V, V_GE = 0 V, T_j = 25°C	—	—	100	µA
Input Capacitance	C_iss	V_GE = 0 V, V_CE = 30 V, f = 100 KHz, T_j = 25°C	—	63.5	—	nF
Output Capacitance	C_oss		—	1.83	—	nF
Reverse Transfer Capacitance	C_rss		—	0.20	—	nF
Turn-on Delay Time	t_d(on)	V_GE = -7/+15 V, V_DC+ = 400 V, V_DC- = 400 V, I_C = 330 A, R_G(on) = 0.5 Ω, R_G(off) = 0.5 Ω, T_j = 25°C	—	53	—	ns
		T_j = 150°C	—	110	—	ns
Rise Time	t_r	T_j = 25°C	—	27	—	ns
		T_j = 150°C	—	35	—	ns
Turn-off Delay Time	t_d(off)	T_j = 25°C	—	194	—	ns
		T_j = 150°C	—	205	—	ns
Fall Time	t_f	T_j = 25°C	—	155	—	ns
		T_j = 150°C	—	268	—	ns
Turn-on Switching Loss	E_on	T_j = 25°C	—	2.97	—	mJ
		T_j = 150°C	—	6.17	—	mJ
Turn-off Switching Loss	E_off	T_j = 25°C	—	12.9	—	mJ
		T_j = 150°C	—	17.7	—	mJ
Thermal Resistance - Chip-to-Case	R_thJC	Per IGBT	—	0.063	—	°C/W

*Engineering-stage data, mass-production data pending.

DIODE (D5, D6)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Diode Forward Voltage	V_F (terminal)	I_F = 500 A, T_j = -40°C	—	1.65	—	V
		T_j = 25°C	—	1.86	—	V
		T_j = 150°C	—	2.06	—	V
Reverse Recovery Time	T_RR	V_GE = -7/+15 V, V_DC+ = 400 V, V_DC- = 400 V, I_C = 330 A, R_G(on) = 0.5 Ω, R_G(off) = 0.5 Ω, T_j = 25°C	—	151	—	ns
		T_j = 150°C	—	210	—	ns
Reverse Recovery Charge	Q_RR	T_j = 25°C	—	15.3	—	µC
		T_j = 150°C	—	29.8	—	µC
Peak Reverse Recovery Current	I_RRM	T_j = 25°C	—	229	—	A
		T_j = 150°C	—	293	—	A
Reverse Recovery Energy	E_REC	T_j = 25°C	—	5.0	—	mJ
		T_j = 150°C	—	9.9	—	mJ
Thermal Resistance - Chip-to-Case	R_thJC	Per diode	—	0.135	—	°C/W

IGBT (Q2, Q3)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Saturation Voltage	V_CE(sat) (terminal)	V_GE = 15 V, I_C = 400 A, T_j = -40°C	—	1.44	—	V
		T_j = 25°C	—	1.53	—	V
		T_j = 150°C	—	1.73	—	V
Gate-Emitter Threshold Voltage	V_GE(TH)	V_GE = V_CE, I_C = 9 mA, T_j = 25°C	4.5	5.0	5.5	V
Total Gate Charge	Q_g	V_GE = -7/+15 V, V_CE = 600 V, T_j = 25°C	—	3.14	—	µC
Gate-Source Leakage Current	I_GES	V_GE = ±25 V, V_CE = 0 V, T_j = 25°C	-100	—	100	nA
Collector-Emitter Voltage	V_(BR)CES	V_GE = 0 V, I_C = 1 mA, T_j = -40°C	—	720	—	V
		T_j = 25°C	700	—	—	V
		T_j = 150°C	—	800	—	V
Collector-Emitter Cutoff Current	I_CES	V_CE = 700 V, V_GE = 0 V, T_j = 25°C	—	—	100	µA
Input Capacitance	C_iss	V_GE = 0 V, V_CE = 30 V, f = 100 KHz, T_j = 25°C	—	48.3	—	nF
Output Capacitance	C_oss		—	0.75	—	nF
Reverse Transfer Capacitance	C_rss		—	0.23	—	nF
Turn-on Delay Time (Q3)	t_d(on)	V_GE = -7/+15 V, V_DC+ = 400 V, V_DC- = 400 V, I_C = 330 A, R_G(on) = 0.5 Ω, R_G(off) = 9.1 Ω, T_j = 25°C	—	42	—	ns
		T_j = 150°C	—	95	—	ns
Rise Time (Q3)	t_r	T_j = 25°C	—	27	—	ns
		T_j = 150°C	—	31	—	ns
Turn-off Delay Time (Q3)	t_d(off)	T_j = 25°C	—	886	—	ns
		T_j = 150°C	—	960	—	ns
Fall Time (Q3)	t_f	T_j = 25°C	—	50	—	ns
		T_j = 150°C	—	60	—	ns
Turn-on Switching Loss (Q3)	E_on	T_j = 25°C	—	1.04	—	mJ
		T_j = 150°C	—	1.96	—	mJ
Turn-off Switching Loss (Q3)	E_off	T_j = 25°C	—	10.2	—	mJ
		T_j = 150°C	—	12.6	—	mJ
Turn-on Delay Time (Q2)	t_d(on)	T_j = 25°C	—	93	—	ns
		T_j = 150°C	—	93	—	ns
Rise Time (Q2)	t_r	T_j = 25°C	—	29	—	ns
		T_j = 150°C	—	32	—	ns
Turn-off Delay Time (Q2)	t_d(off)	T_j = 25°C	—	880	—	ns
		T_j = 150°C	—	950	—	ns
Fall Time (Q2)	t_f	T_j = 25°C	—	56	—	ns
		T_j = 150°C	—	61	—	ns
Turn-on Switching Loss (Q2)	E_on	T_j = 25°C	—	0.68	—	mJ
		T_j = 150°C	—	1.70	—	mJ
Turn-off Switching Loss (Q2)	E_off	T_j = 25°C	—	10.7	—	mJ
		T_j = 150°C	—	13.5	—	mJ
Thermal Resistance - Chip-to-Case	R_thJC	Per IGBT	—	0.140	—	°C/W

INVERSE DIODE (D1)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Diode Forward Voltage	V_F (terminal)	I_F = 300 A, T_j = -40°C	—	1.71	—	V
		T_j = 25°C	—	1.85	—	V
		T_j = 150°C	—	1.95	—	V
Reverse Recovery Time	T_RR	V_GE = -7/+15 V, V_DC+ = 400 V, V_DC- = 400 V, I_C = 330 A, R_G(on) = 0.5 Ω, R_G(off) = 9.1 Ω, T_j = 25°C	—	74	—	ns
		T_j = 150°C	—	306	—	ns
Reverse Recovery Charge	Q_RR	T_j = 25°C	—	13.2	—	µC
		T_j = 150°C	—	38.3	—	µC
Peak Reverse Recovery Current	I_RRM	T_j = 25°C	—	328	—	A
		T_j = 150°C	—	418	—	A
Reverse Recovery Energy	E_REC	T_j = 25°C	—	6.28	—	mJ
		T_j = 150°C	—	15.5	—	mJ
Thermal Resistance - Chip-to-Case	R_thJC	Per diode	—	0.119	—	°C/W

INVERSE DIODE (D4)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Diode Forward Voltage	V_F (terminal)	I_F = 400 A, T_j = -40°C	—	1.76	—	V
		T_j = 25°C	—	1.98	—	V
		T_j = 150°C	—	2.20	—	V
Reverse Recovery Time	T_RR	V_GE = -7/+15 V, V_DC+ = 400 V, V_DC- = 400 V, I_C = 330 A, R_G(on) = 0.5 Ω, R_G(off) = 9.1 Ω, T_j = 25°C	—	85	—	ns
		T_j = 150°C	—	315	—	ns
Reverse Recovery Charge	Q_RR	T_j = 25°C	—	15.7	—	µC
		T_j = 150°C	—	45.5	—	µC
Peak Reverse Recovery Current	I_RRM	T_j = 25°C	—	328	—	A
		T_j = 150°C	—	450	—	A
Reverse Recovery Energy	E_REC	T_j = 25°C	—	7.51	—	mJ
		T_j = 150°C	—	19.0	—	mJ
Thermal Resistance - Chip-to-Case	R_thJC	Per diode	—	0.102	—	°C/W

INVERSE DIODE (D2, D3)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Diode Forward Voltage	V_F (terminal)	I_F = 100 A, T_j = -40°C	—	1.51	—	V
		T_j = 25°C	—	1.58	—	V
		T_j = 150°C	—	1.63	—	V

NTC-Thermistor

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Rated resistance	R25	—	5	—	kΩ	T_C = 25°C
Deviation of R100	ΔR/R	-5	—	5	%	T_C = 100°C, R100 = 493 Ω
B-value	B25/50	—	3375	—	K

Module Characteristics

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Mounting Torque (Screw M5)	M	3.0	—	5.0	N·m
Creepage Distance		—	16.2	—	mm	terminal to heatsink
Clearance		—	15.2	—	mm	terminal to heatsink
CTI		—	≥600	—
Flatness of base plate		—	—	0.3	mm

Notes:

Confidential Shared Under NDA.

Specifications

Online Datasheet

SS120N060FTC

1200 V / 600 A 3-Level NPC2 Inverter Module

Features

Benefits

Applications

Absolute Maximum Ratings (@ TA = 25°C)

Electrical Characteristics (@ Tj = 25°C, unless otherwise specified.)

IGBT (Q1, Q4)

DIODE (D5, D6)

IGBT (Q2, Q3)

INVERSE DIODE (D1)

INVERSE DIODE (D4)

INVERSE DIODE (D2, D3)

NTC-Thermistor

Module Characteristics

Related Parts

Absolute Maximum Ratings (@ T_A = 25°C)

Electrical Characteristics (@ T_j = 25°C, unless otherwise specified.)