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SS120N060FTC

中晶新源 SineSemi核心代理商

IGBT 模块工业Easy3b+BP
规格书下载

参数规格

封装
Easy3b+BP
集射极电压 VCES
1200 V
集电极电流 IC 最大
600 A
饱和压降 VCE(sat) 典型
1.8 V
状态
MP
认证等级
Industrial
结构
3-Level
结温 Tj
175 °C
正向压降 VF 典型
1.9 V

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SS120N060FTC

1200 V / 600 A 3-Level NPC2 Inverter Module

Features
  • Neutral Point Clamped Three-Level Inverter Module
  • Low Inductive Layout
  • Solderable Pins
Benefits
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Low Conduction Losses Over Temperature
Applications
  • Solar Inverters
  • Uninterruptable Power Supplies Systems

Package: Easy3b+BP

Absolute Maximum Ratings (@ T_A = 25°C)
Parameter Symbol Value Unit
IGBT (Q1, Q4)
Collector-Emitter Voltage V_CES 1200 V
Gate-Emitter Voltage V_GE ±25 V
Positive Transient Gate-Emitter Voltage (T_pulse = 5 s, D < 0.10) 30 V
Continuous Collector Current I_C 600 A
Pulsed Collector Current I_CP 1200 A
IGBT (Q2, Q3)
Collector-Emitter Voltage V_CES 700 V
Gate-Emitter Voltage V_GE ±25 V
Positive Transient Gate-Emitter Voltage (T_pulse = 5 s, D < 0.10) 30 V
Continuous Collector Current I_C 400 A
Pulsed Collector Current I_CP 800 A
DIODE (D1)
Peak Repetitive Reverse Voltage V_RRM 1200 V
Continuous Forward Current I_F 300 A
Repetitive Peak Forward Current I_FRM 600 A
DIODE (D4)
Peak Repetitive Reverse Voltage V_RRM 1200 V
Continuous Forward Current I_F 400 A
Repetitive Peak Forward Current I_FRM 800 A
DIODE (D2, D3)
Peak Repetitive Reverse Voltage V_RRM 700 V
Continuous Forward Current I_F 100 A
Repetitive Peak Forward Current I_FRM 200 A
DIODE (D5, D6)
Peak Repetitive Reverse Voltage V_RRM 700 V
Continuous Forward Current I_F 500 A
Repetitive Peak Forward Current I_FRM 1000 A
Insulation
Isolation Test Voltage, t = 1 min, 50 Hz V_iso 4000 V_RMS
Temperature
Storage Temperature T_stg -40 to +125 °C
Operating Temperature T_vjop -40 to +150 °C
Junction Temperature T_j -40 to +175 °C

Electrical Characteristics (@ T_j = 25°C, unless otherwise specified.)

IGBT (Q1, Q4)
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Saturation Voltage V_CE(sat) (terminal) V_GE = 15 V, I_C = 600 A, T_j = -40°C — 1.66 — V
T_j = 25°C — 1.82 — V
T_j = 150°C — 2.30 — V
Gate-Emitter Threshold Voltage V_GE(TH) V_GE = V_CE, I_C = 9 mA, T_j = 25°C 5.0 5.50 6.0 V
Total Gate Charge Q_g V_GE = -7/+15 V, V_CE = 600 V, T_j = 25°C — 3.17 — µC
Gate-Source Leakage Current I_GES V_GE = ±25 V, V_CE = 0 V, T_j = 25°C -100 — 100 nA
Collector-Emitter Voltage V_(BR)CES V_GE = 0 V, I_C = 1 mA, T_j = -40°C — 1200* — V
T_j = 25°C 1200 — — V
I_C = 2 mA, T_j = 150°C — 1310* — V
Collector-Emitter Cutoff Current I_CES V_CE = 1200 V, V_GE = 0 V, T_j = 25°C — — 100 µA
Input Capacitance C_iss V_GE = 0 V, V_CE = 30 V, f = 100 KHz, T_j = 25°C — 63.5 — nF
Output Capacitance C_oss — 1.83 — nF
Reverse Transfer Capacitance C_rss — 0.20 — nF
Turn-on Delay Time t_d(on) V_GE = -7/+15 V, V_DC+ = 400 V, V_DC- = 400 V, I_C = 330 A, R_G(on) = 0.5 Ω, R_G(off) = 0.5 Ω, T_j = 25°C — 53 — ns
T_j = 150°C — 110 — ns
Rise Time t_r T_j = 25°C — 27 — ns
T_j = 150°C — 35 — ns
Turn-off Delay Time t_d(off) T_j = 25°C — 194 — ns
T_j = 150°C — 205 — ns
Fall Time t_f T_j = 25°C — 155 — ns
T_j = 150°C — 268 — ns
Turn-on Switching Loss E_on T_j = 25°C — 2.97 — mJ
T_j = 150°C — 6.17 — mJ
Turn-off Switching Loss E_off T_j = 25°C — 12.9 — mJ
T_j = 150°C — 17.7 — mJ
Thermal Resistance - Chip-to-Case R_thJC Per IGBT — 0.063 — °C/W

*Engineering-stage data, mass-production data pending.

DIODE (D5, D6)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage V_F (terminal) I_F = 500 A, T_j = -40°C — 1.65 — V
T_j = 25°C — 1.86 — V
T_j = 150°C — 2.06 — V
Reverse Recovery Time T_RR V_GE = -7/+15 V, V_DC+ = 400 V, V_DC- = 400 V, I_C = 330 A, R_G(on) = 0.5 Ω, R_G(off) = 0.5 Ω, T_j = 25°C — 151 — ns
T_j = 150°C — 210 — ns
Reverse Recovery Charge Q_RR T_j = 25°C — 15.3 — µC
T_j = 150°C — 29.8 — µC
Peak Reverse Recovery Current I_RRM T_j = 25°C — 229 — A
T_j = 150°C — 293 — A
Reverse Recovery Energy E_REC T_j = 25°C — 5.0 — mJ
T_j = 150°C — 9.9 — mJ
Thermal Resistance - Chip-to-Case R_thJC Per diode — 0.135 — °C/W
IGBT (Q2, Q3)
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Saturation Voltage V_CE(sat) (terminal) V_GE = 15 V, I_C = 400 A, T_j = -40°C — 1.44 — V
T_j = 25°C — 1.53 — V
T_j = 150°C — 1.73 — V
Gate-Emitter Threshold Voltage V_GE(TH) V_GE = V_CE, I_C = 9 mA, T_j = 25°C 4.5 5.0 5.5 V
Total Gate Charge Q_g V_GE = -7/+15 V, V_CE = 600 V, T_j = 25°C — 3.14 — µC
Gate-Source Leakage Current I_GES V_GE = ±25 V, V_CE = 0 V, T_j = 25°C -100 — 100 nA
Collector-Emitter Voltage V_(BR)CES V_GE = 0 V, I_C = 1 mA, T_j = -40°C — 720 — V
T_j = 25°C 700 — — V
T_j = 150°C — 800 — V
Collector-Emitter Cutoff Current I_CES V_CE = 700 V, V_GE = 0 V, T_j = 25°C — — 100 µA
Input Capacitance C_iss V_GE = 0 V, V_CE = 30 V, f = 100 KHz, T_j = 25°C — 48.3 — nF
Output Capacitance C_oss — 0.75 — nF
Reverse Transfer Capacitance C_rss — 0.23 — nF
Turn-on Delay Time (Q3) t_d(on) V_GE = -7/+15 V, V_DC+ = 400 V, V_DC- = 400 V, I_C = 330 A, R_G(on) = 0.5 Ω, R_G(off) = 9.1 Ω, T_j = 25°C — 42 — ns
T_j = 150°C — 95 — ns
Rise Time (Q3) t_r T_j = 25°C — 27 — ns
T_j = 150°C — 31 — ns
Turn-off Delay Time (Q3) t_d(off) T_j = 25°C — 886 — ns
T_j = 150°C — 960 — ns
Fall Time (Q3) t_f T_j = 25°C — 50 — ns
T_j = 150°C — 60 — ns
Turn-on Switching Loss (Q3) E_on T_j = 25°C — 1.04 — mJ
T_j = 150°C — 1.96 — mJ
Turn-off Switching Loss (Q3) E_off T_j = 25°C — 10.2 — mJ
T_j = 150°C — 12.6 — mJ
Turn-on Delay Time (Q2) t_d(on) T_j = 25°C — 93 — ns
T_j = 150°C — 93 — ns
Rise Time (Q2) t_r T_j = 25°C — 29 — ns
T_j = 150°C — 32 — ns
Turn-off Delay Time (Q2) t_d(off) T_j = 25°C — 880 — ns
T_j = 150°C — 950 — ns
Fall Time (Q2) t_f T_j = 25°C — 56 — ns
T_j = 150°C — 61 — ns
Turn-on Switching Loss (Q2) E_on T_j = 25°C — 0.68 — mJ
T_j = 150°C — 1.70 — mJ
Turn-off Switching Loss (Q2) E_off T_j = 25°C — 10.7 — mJ
T_j = 150°C — 13.5 — mJ
Thermal Resistance - Chip-to-Case R_thJC Per IGBT — 0.140 — °C/W
INVERSE DIODE (D1)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage V_F (terminal) I_F = 300 A, T_j = -40°C — 1.71 — V
T_j = 25°C — 1.85 — V
T_j = 150°C — 1.95 — V
Reverse Recovery Time T_RR V_GE = -7/+15 V, V_DC+ = 400 V, V_DC- = 400 V, I_C = 330 A, R_G(on) = 0.5 Ω, R_G(off) = 9.1 Ω, T_j = 25°C — 74 — ns
T_j = 150°C — 306 — ns
Reverse Recovery Charge Q_RR T_j = 25°C — 13.2 — µC
T_j = 150°C — 38.3 — µC
Peak Reverse Recovery Current I_RRM T_j = 25°C — 328 — A
T_j = 150°C — 418 — A
Reverse Recovery Energy E_REC T_j = 25°C — 6.28 — mJ
T_j = 150°C — 15.5 — mJ
Thermal Resistance - Chip-to-Case R_thJC Per diode — 0.119 — °C/W
INVERSE DIODE (D4)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage V_F (terminal) I_F = 400 A, T_j = -40°C — 1.76 — V
T_j = 25°C — 1.98 — V
T_j = 150°C — 2.20 — V
Reverse Recovery Time T_RR V_GE = -7/+15 V, V_DC+ = 400 V, V_DC- = 400 V, I_C = 330 A, R_G(on) = 0.5 Ω, R_G(off) = 9.1 Ω, T_j = 25°C — 85 — ns
T_j = 150°C — 315 — ns
Reverse Recovery Charge Q_RR T_j = 25°C — 15.7 — µC
T_j = 150°C — 45.5 — µC
Peak Reverse Recovery Current I_RRM T_j = 25°C — 328 — A
T_j = 150°C — 450 — A
Reverse Recovery Energy E_REC T_j = 25°C — 7.51 — mJ
T_j = 150°C — 19.0 — mJ
Thermal Resistance - Chip-to-Case R_thJC Per diode — 0.102 — °C/W
INVERSE DIODE (D2, D3)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage V_F (terminal) I_F = 100 A, T_j = -40°C — 1.51 — V
T_j = 25°C — 1.58 — V
T_j = 150°C — 1.63 — V
NTC-Thermistor
Parameter Symbol Min Typ Max Unit Conditions
Rated resistance R25 — 5 — kΩ T_C = 25°C
Deviation of R100 ΔR/R -5 — 5 % T_C = 100°C, R100 = 493 Ω
B-value B25/50 — 3375 — K
Module Characteristics
Parameter Symbol Min Typ Max Unit Conditions
Mounting Torque (Screw M5) M 3.0 — 5.0 N·m
Creepage Distance — 16.2 — mm terminal to heatsink
Clearance — 15.2 — mm terminal to heatsink
CTI — ≥600 —
Flatness of base plate — — 0.3 mm

Notes:

Confidential Shared Under NDA.

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