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SS065N045FIA

中晶新源 SineSemi核心代理商

IGBT 模块工业Flow2
规格书下载

参数规格

封装
Flow2
集射极电压 VCES
650 V
集电极电流 IC 最大
450 A
饱和压降 VCE(sat) 典型
1.6 V
状态
MP
认证等级
Industrial
结构
3-Level
结温 Tj
175 °C
饱和压降 VCE(sat) 最大
2.2 V
正向压降 VF 典型
1.23 V
正向压降 VF 最大
2.05 V

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SS065N045FIA

650 V / 450 A 3-Level NPC Inverter Module

Features
  • Neutral Point Clamped Three-Level Inverter Module
  • Low Inductive Layout
  • Solderable Pins
Benefits
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Low Conduction Losses Over Temperature
Applications
  • Solar Inverters
  • Uninterruptable Power Supplies Systems

Package: Flow2

Absolute Maximum Ratings (@ T_A = 25°C)
Parameter Symbol Value Unit
OUTER IGBT (Q1, Q4)
Collector-Emitter Voltage V_CES 650 V
Gate-Emitter Voltage V_GE ±20 V
Continuous Collector Current @ T_C = 80°C, T_j = 175°C I_C 270 A
Pulsed Collector Current @ T_j = 175°C I_CP 810 A
Junction Temperature T_j -40 to +175 °C
INNER IGBT (Q2, Q3)
Collector-Emitter Voltage V_CES 650 V
Gate-Emitter Voltage V_GE ±20 V
Continuous Collector Current @ T_C = 80°C, T_j = 175°C I_C 293 A
Pulsed Collector Current @ T_j = 175°C I_CP 880 A
Junction Temperature T_j -40 to +175 °C
DIODE (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage V_RRM 650 V
Continuous Forward Current @ T_C = 80°C, T_j = 175°C I_F 188 A
Repetitive Peak Forward Current @ T_j = 175°C I_FRM 563 A
I²t-value @ V_R = 0 V, t_P = 10 ms, T_vj = 150°C I²t 1800 A²s
DIODE (D5, D6)
Peak Repetitive Reverse Voltage V_RRM 650 V
Continuous Forward Current @ T_C = 80°C, T_j = 175°C I_F 230 A
Repetitive Peak Forward Current @ T_j = 175°C I_FRM 690 A
I²t-value @ V_R = 0 V, t_P = 10 ms, T_vj = 150°C I²t 9800 A²s
Insulation
Isolation Test Voltage, t = 1 s, 50 Hz V_iso 4000 V_RMS
Temperature
Storage Temperature T_stg -40 to +125 °C
Operating Temperature T_op -40 to +150 °C

Electrical Characteristics (@ T_j = 25°C, unless otherwise specified.)

OUTER IGBT (Q1, Q4)
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Saturation Voltage V_CE(sat) V_GE = 15 V, I_C = 450 A, T_j = 25°C — 1.6 2.2 V
V_GE = 15 V, I_C = 450 A, T_j = 150°C — 1.85 — V
Gate-Emitter Threshold Voltage V_GE(TH) V_GE = V_CE, I_C = 4 mA, T_j = 25°C 3.2 3.8 4.4 V
Total Gate Charge Q_g V_GE = ±15 V, V_CE = 480 V, T_j = 25°C — 1.6 — µC
Gate-Source Leakage Current I_GES V_GE = 20 V, V_CE = 0 V, T_j = 25°C — — 100 nA
Collector-Emitter Voltage V_(BR)CES V_GE = 0 V, T_j = 25°C 650 — — V
Collector-Emitter Cutoff Current I_CES V_CE = 650 V, V_GE = 0 V, T_j = 25°C — — 100 µA
Input Capacitance C_iss V_GE = 0 V, V_CE = 20 V, f = 10 KHz — 24054 — pF
Output Capacitance C_oss — 1942 — pF
Reverse Transfer Capacitance C_rss — 140 — pF
Turn-on delay time t_d(on) V_GE = -7/+15 V, V_CE = 400 V, I_C = 150 A, R_G(on) = 9.4 Ω, R_G(off) = 15.7 Ω, T_j = 25°C — 75 — ns
T_j = 150°C — 58 — ns
Rise time t_r T_j = 25°C — 33 — ns
T_j = 150°C — 38 — ns
Turn-off delay time t_d(off) T_j = 25°C — 757 — ns
T_j = 150°C — 804 — ns
Fall time t_f T_j = 25°C — 44 — ns
T_j = 150°C — 54 — ns
Turn-on Switching Loss E_on T_j = 25°C — 4.7 — mJ
T_j = 150°C — 7.2 — mJ
Turn-off Switching Loss E_off T_j = 25°C — 2.6 — mJ
T_j = 150°C — 3.3 — mJ
Thermal Resistance - Chip-to-Heatsink R_thJH Thermal grease, λ = 2.8 W/mK — 0.24 — °C/W
Thermal Resistance - Chip-to-Case R_thJC — 0.16 — °C/W
NEUTRAL POINT DIODE (D5, D6)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage V_F I_F = 450 A, T_j = 25°C — 1.65 2.05 V
I_F = 450 A, T_j = 150°C — 1.75 — V
Reverse Recovery Time T_RR V_GE = -7/+15 V, V_CE = 400 V, I_C = 150 A, T_j = 25°C — 173 — ns
T_j = 150°C — 215 — ns
Reverse Recovery Charge Q_RR T_j = 25°C — 8.68 — µC
T_j = 150°C — 20.4 — µC
Peak Reverse Recovery Current I_RRM T_j = 25°C — 120 — A
T_j = 150°C — 184 — A
Reverse Recovery Energy E_RR T_j = 25°C — 1.94 — mJ
T_j = 150°C — 4.55 — mJ
Thermal Resistance - Chip-to-Heatsink R_thJH Thermal grease, λ = 2.8 W/mK — 0.29 — °C/W
Thermal Resistance - Chip-to-Case R_thJC — 0.19 — °C/W
INNER IGBT (Q2, Q3)
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Saturation Voltage V_CE(sat) V_GE = 15 V, I_C = 450 A, T_j = 25°C — 1.28 1.8 V
V_GE = 15 V, I_C = 450 A, T_j = 150°C — 1.45 — V
Gate-Emitter Threshold Voltage V_GE(TH) V_GE = V_CE, I_C = 4 mA, T_j = 25°C 4.2 4.85 5.4 V
Total Gate Charge Q_g V_GE = ±15 V, V_CE = 480 V, T_j = 25°C — 3.7 — µC
Gate-Source Leakage Current I_GES V_GE = 20 V, V_CE = 0 V, T_j = 25°C — — 100 nA
Collector-Emitter Voltage V_(BR)CES V_GE = 0 V, T_j = 25°C 650 — — V
Collector-Emitter Cutoff Current I_CES V_CE = 650 V, V_GE = 0 V, T_j = 25°C — — 100 µA
Input Capacitance C_iss V_GE = 0 V, V_CE = 20 V, f = 10 KHz — 46942 — pF
Output Capacitance C_oss — 982 — pF
Reverse Transfer Capacitance C_rss — 263 — pF
Turn-on delay time t_d(on) V_GE = -7/+15 V, V_CE = 400 V, I_C = 150 A, R_G(on) = 40 Ω, R_G(off) = 40 Ω, T_j = 25°C — 826 — ns
T_j = 150°C — 689 — ns
Rise time t_r T_j = 25°C — 149 — ns
T_j = 150°C — 180 — ns
Turn-off delay time t_d(off) T_j = 25°C — 3790 — ns
T_j = 150°C — 4167 — ns
Fall time t_f T_j = 25°C — 118 — ns
T_j = 150°C — 108 — ns
Turn-on Switching Loss E_on T_j = 25°C — 15.9 — mJ
T_j = 150°C — 18.75 — mJ
Turn-off Switching Loss E_off T_j = 25°C — 8.8 — mJ
T_j = 150°C — 9.3 — mJ
Thermal Resistance - Chip-to-Heatsink R_thJH Thermal grease, λ = 2.8 W/mK — 0.28 — °C/W
Thermal Resistance - Chip-to-Case R_thJC — 0.18 — °C/W
INVERSE DIODE (D1, D2, D3, D4)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage V_F I_F = 100 A, T_j = 25°C — 1.23 1.65 V
I_F = 100 A, T_j = 150°C — 1.18 — V
I_F = 200 A, T_j = 25°C — 1.58 — V
I_F = 200 A, T_j = 150°C — 1.64 — V
Reverse Recovery Time T_RR V_GE = -7/+15 V, V_CE = 400 V, I_C = 150 A, T_j = 25°C — 363 — ns
T_j = 150°C — 436 — ns
Reverse Recovery Charge Q_RR T_j = 25°C — 6.48 — µC
T_j = 150°C — 10.6 — µC
Peak Reverse Recovery Current I_RRM T_j = 25°C — 43.3 — A
T_j = 150°C — 48.1 — A
Reverse Recovery Energy E_RR T_j = 25°C — 1.1 — mJ
T_j = 150°C — 1.78 — mJ
Thermal Resistance - Chip-to-Heatsink R_thJH Thermal grease, λ = 2.8 W/mK — 0.41 — °C/W
Thermal Resistance - Chip-to-Case R_thJC — 0.32 — °C/W
NTC-Thermistor
Parameter Symbol Min Typ Max Unit Conditions
Rated resistance R25 — 22 — kΩ T_C = 25°C
Deviation of R100 ΔR/R -5 — 5 % T_C = 100°C, R100 = 1486 Ω
Power Dissipation P25 — — 20 mW T_NTC = 25°C
B-value B25/50 — 3950 — K B (25/50), tolerance ±3%
B-value B25/100 — 3998 — K B (25/100), tolerance ±3%
Module Characteristics
Parameter Symbol Min Typ Max Unit Conditions
Stray Inductance L_CE — 17 — nH
Mounting Torque (Screw M5) M 3.0 — 5.0 N·m
Creepage distance — 12.7 — mm terminal to heatsink
Clearance — 12.7 — mm terminal to heatsink
CTI — ≥600 —
RTI — 130 — °C
Flatness of base plate — — 0.3 mm
Weight — 176.5 — g

Notes:

Confidential Shared Under NDA.

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