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SS065N045FIA

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IGBT 模块工业Flow2

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参数规格

封装: Flow2
集射极电压 VCES: 650 V
集电极电流 IC 最大: 450 A
饱和压降 VCE(sat) 典型: 1.6 V
状态: MP
认证等级: Industrial
结构: 3-Level
结温 Tj: 175 °C
饱和压降 VCE(sat) 最大: 2.2 V
正向压降 VF 典型: 1.23 V
正向压降 VF 最大: 2.05 V

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SS065N045FIA

650 V / 450 A 3-Level NPC Inverter Module

Features

Neutral Point Clamped Three-Level Inverter Module
Low Inductive Layout
Solderable Pins

Benefits

Higher System Efficiency
Reduced Cooling Requirements
Low Conduction Losses Over Temperature

Applications

Solar Inverters
Uninterruptable Power Supplies Systems

Package: Flow2

Absolute Maximum Ratings (@ T_A = 25°C)

Parameter	Symbol	Value	Unit
OUTER IGBT (Q1, Q4)
Collector-Emitter Voltage	V_CES	650	V
Gate-Emitter Voltage	V_GE	±20	V
Continuous Collector Current @ T_C = 80°C, T_j = 175°C	I_C	270	A
Pulsed Collector Current @ T_j = 175°C	I_CP	810	A
Junction Temperature	T_j	-40 to +175	°C
INNER IGBT (Q2, Q3)
Collector-Emitter Voltage	V_CES	650	V
Gate-Emitter Voltage	V_GE	±20	V
Continuous Collector Current @ T_C = 80°C, T_j = 175°C	I_C	293	A
Pulsed Collector Current @ T_j = 175°C	I_CP	880	A
Junction Temperature	T_j	-40 to +175	°C
DIODE (D1, D2, D3, D4)
Peak Repetitive Reverse Voltage	V_RRM	650	V
Continuous Forward Current @ T_C = 80°C, T_j = 175°C	I_F	188	A
Repetitive Peak Forward Current @ T_j = 175°C	I_FRM	563	A
I²t-value @ V_R = 0 V, t_P = 10 ms, T_vj = 150°C	I²t	1800	A²s
DIODE (D5, D6)
Peak Repetitive Reverse Voltage	V_RRM	650	V
Continuous Forward Current @ T_C = 80°C, T_j = 175°C	I_F	230	A
Repetitive Peak Forward Current @ T_j = 175°C	I_FRM	690	A
I²t-value @ V_R = 0 V, t_P = 10 ms, T_vj = 150°C	I²t	9800	A²s
Insulation
Isolation Test Voltage, t = 1 s, 50 Hz	V_iso	4000	V_RMS
Temperature
Storage Temperature	T_stg	-40 to +125	°C
Operating Temperature	T_op	-40 to +150	°C

Electrical Characteristics (@ T_j = 25°C, unless otherwise specified.)

OUTER IGBT (Q1, Q4)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Saturation Voltage	V_CE(sat)	V_GE = 15 V, I_C = 450 A, T_j = 25°C	—	1.6	2.2	V
		V_GE = 15 V, I_C = 450 A, T_j = 150°C	—	1.85	—	V
Gate-Emitter Threshold Voltage	V_GE(TH)	V_GE = V_CE, I_C = 4 mA, T_j = 25°C	3.2	3.8	4.4	V
Total Gate Charge	Q_g	V_GE = ±15 V, V_CE = 480 V, T_j = 25°C	—	1.6	—	µC
Gate-Source Leakage Current	I_GES	V_GE = 20 V, V_CE = 0 V, T_j = 25°C	—	—	100	nA
Collector-Emitter Voltage	V_(BR)CES	V_GE = 0 V, T_j = 25°C	650	—	—	V
Collector-Emitter Cutoff Current	I_CES	V_CE = 650 V, V_GE = 0 V, T_j = 25°C	—	—	100	µA
Input Capacitance	C_iss	V_GE = 0 V, V_CE = 20 V, f = 10 KHz	—	24054	—	pF
Output Capacitance	C_oss		—	1942	—	pF
Reverse Transfer Capacitance	C_rss		—	140	—	pF
Turn-on delay time	t_d(on)	V_GE = -7/+15 V, V_CE = 400 V, I_C = 150 A, R_G(on) = 9.4 Ω, R_G(off) = 15.7 Ω, T_j = 25°C	—	75	—	ns
		T_j = 150°C	—	58	—	ns
Rise time	t_r	T_j = 25°C	—	33	—	ns
		T_j = 150°C	—	38	—	ns
Turn-off delay time	t_d(off)	T_j = 25°C	—	757	—	ns
		T_j = 150°C	—	804	—	ns
Fall time	t_f	T_j = 25°C	—	44	—	ns
		T_j = 150°C	—	54	—	ns
Turn-on Switching Loss	E_on	T_j = 25°C	—	4.7	—	mJ
		T_j = 150°C	—	7.2	—	mJ
Turn-off Switching Loss	E_off	T_j = 25°C	—	2.6	—	mJ
		T_j = 150°C	—	3.3	—	mJ
Thermal Resistance - Chip-to-Heatsink	R_thJH	Thermal grease, λ = 2.8 W/mK	—	0.24	—	°C/W
Thermal Resistance - Chip-to-Case	R_thJC		—	0.16	—	°C/W

NEUTRAL POINT DIODE (D5, D6)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Diode Forward Voltage	V_F	I_F = 450 A, T_j = 25°C	—	1.65	2.05	V
		I_F = 450 A, T_j = 150°C	—	1.75	—	V
Reverse Recovery Time	T_RR	V_GE = -7/+15 V, V_CE = 400 V, I_C = 150 A, T_j = 25°C	—	173	—	ns
		T_j = 150°C	—	215	—	ns
Reverse Recovery Charge	Q_RR	T_j = 25°C	—	8.68	—	µC
		T_j = 150°C	—	20.4	—	µC
Peak Reverse Recovery Current	I_RRM	T_j = 25°C	—	120	—	A
		T_j = 150°C	—	184	—	A
Reverse Recovery Energy	E_RR	T_j = 25°C	—	1.94	—	mJ
		T_j = 150°C	—	4.55	—	mJ
Thermal Resistance - Chip-to-Heatsink	R_thJH	Thermal grease, λ = 2.8 W/mK	—	0.29	—	°C/W
Thermal Resistance - Chip-to-Case	R_thJC		—	0.19	—	°C/W

INNER IGBT (Q2, Q3)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Saturation Voltage	V_CE(sat)	V_GE = 15 V, I_C = 450 A, T_j = 25°C	—	1.28	1.8	V
		V_GE = 15 V, I_C = 450 A, T_j = 150°C	—	1.45	—	V
Gate-Emitter Threshold Voltage	V_GE(TH)	V_GE = V_CE, I_C = 4 mA, T_j = 25°C	4.2	4.85	5.4	V
Total Gate Charge	Q_g	V_GE = ±15 V, V_CE = 480 V, T_j = 25°C	—	3.7	—	µC
Gate-Source Leakage Current	I_GES	V_GE = 20 V, V_CE = 0 V, T_j = 25°C	—	—	100	nA
Collector-Emitter Voltage	V_(BR)CES	V_GE = 0 V, T_j = 25°C	650	—	—	V
Collector-Emitter Cutoff Current	I_CES	V_CE = 650 V, V_GE = 0 V, T_j = 25°C	—	—	100	µA
Input Capacitance	C_iss	V_GE = 0 V, V_CE = 20 V, f = 10 KHz	—	46942	—	pF
Output Capacitance	C_oss		—	982	—	pF
Reverse Transfer Capacitance	C_rss		—	263	—	pF
Turn-on delay time	t_d(on)	V_GE = -7/+15 V, V_CE = 400 V, I_C = 150 A, R_G(on) = 40 Ω, R_G(off) = 40 Ω, T_j = 25°C	—	826	—	ns
		T_j = 150°C	—	689	—	ns
Rise time	t_r	T_j = 25°C	—	149	—	ns
		T_j = 150°C	—	180	—	ns
Turn-off delay time	t_d(off)	T_j = 25°C	—	3790	—	ns
		T_j = 150°C	—	4167	—	ns
Fall time	t_f	T_j = 25°C	—	118	—	ns
		T_j = 150°C	—	108	—	ns
Turn-on Switching Loss	E_on	T_j = 25°C	—	15.9	—	mJ
		T_j = 150°C	—	18.75	—	mJ
Turn-off Switching Loss	E_off	T_j = 25°C	—	8.8	—	mJ
		T_j = 150°C	—	9.3	—	mJ
Thermal Resistance - Chip-to-Heatsink	R_thJH	Thermal grease, λ = 2.8 W/mK	—	0.28	—	°C/W
Thermal Resistance - Chip-to-Case	R_thJC		—	0.18	—	°C/W

INVERSE DIODE (D1, D2, D3, D4)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Diode Forward Voltage	V_F	I_F = 100 A, T_j = 25°C	—	1.23	1.65	V
		I_F = 100 A, T_j = 150°C	—	1.18	—	V
		I_F = 200 A, T_j = 25°C	—	1.58	—	V
		I_F = 200 A, T_j = 150°C	—	1.64	—	V
Reverse Recovery Time	T_RR	V_GE = -7/+15 V, V_CE = 400 V, I_C = 150 A, T_j = 25°C	—	363	—	ns
		T_j = 150°C	—	436	—	ns
Reverse Recovery Charge	Q_RR	T_j = 25°C	—	6.48	—	µC
		T_j = 150°C	—	10.6	—	µC
Peak Reverse Recovery Current	I_RRM	T_j = 25°C	—	43.3	—	A
		T_j = 150°C	—	48.1	—	A
Reverse Recovery Energy	E_RR	T_j = 25°C	—	1.1	—	mJ
		T_j = 150°C	—	1.78	—	mJ
Thermal Resistance - Chip-to-Heatsink	R_thJH	Thermal grease, λ = 2.8 W/mK	—	0.41	—	°C/W
Thermal Resistance - Chip-to-Case	R_thJC		—	0.32	—	°C/W

NTC-Thermistor

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Rated resistance	R25	—	22	—	kΩ	T_C = 25°C
Deviation of R100	ΔR/R	-5	—	5	%	T_C = 100°C, R100 = 1486 Ω
Power Dissipation	P25	—	—	20	mW	T_NTC = 25°C
B-value	B25/50	—	3950	—	K	B (25/50), tolerance ±3%
B-value	B25/100	—	3998	—	K	B (25/100), tolerance ±3%

Module Characteristics

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Stray Inductance	L_CE	—	17	—	nH
Mounting Torque (Screw M5)	M	3.0	—	5.0	N·m
Creepage distance		—	12.7	—	mm	terminal to heatsink
Clearance		—	12.7	—	mm	terminal to heatsink
CTI		—	≥600	—
RTI		—	130	—	°C
Flatness of base plate		—	—	0.3	mm
Weight		—	176.5	—	g

Notes:

Confidential Shared Under NDA.

参数规格

在线规格书

SS065N045FIA

650 V / 450 A 3-Level NPC Inverter Module

Features

Benefits

Applications

Absolute Maximum Ratings (@ TA = 25°C)

Electrical Characteristics (@ Tj = 25°C, unless otherwise specified.)

OUTER IGBT (Q1, Q4)

NEUTRAL POINT DIODE (D5, D6)

INNER IGBT (Q2, Q3)

INVERSE DIODE (D1, D2, D3, D4)

NTC-Thermistor

Module Characteristics

相关型号

Absolute Maximum Ratings (@ T_A = 25°C)

Electrical Characteristics (@ T_j = 25°C, unless otherwise specified.)