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SS120N060FTCC

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IGBT 模块工业Easy3b+BP
规格书下载

参数规格

封装
Easy3b+BP
集射极电压 VCES
1200 V
集电极电流 IC 最大
600 A
饱和压降 VCE(sat) 典型
1.8 V
状态
MP
认证等级
Industrial
结构
3-Level
结温 Tj
175 °C
正向压降 VF 典型
1.8 V

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SS120N060FTCC

1200 V / 600 A 3-Level NPC2 Inverter Module

Features
  • Neutral Point Clamped Three-Level Inverter Module
  • Low Inductive Layout
  • Solderable Pins
Benefits
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Low Conduction Losses Over Temperature
Applications
  • Energy storage applications
  • Three-level applications
  • High-frequency switching application
  • Solar applications

Package: Easy3b+BP

Absolute Maximum Ratings (@ TA = 25°C)
Parameter Symbol Value Unit
IGBT (Q1, Q4)
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGE ±25 V
Positive Transient Gate-Emitter Voltage (Tpulse = 5 s, D < 0.10) 30 V
Continuous Collector Current IC 600 A
Pulsed Collector Current ICP 1200 A
IGBT (Q2, Q3)
Collector-Emitter Voltage VCES 750 V
Gate-Emitter Voltage VGE ±25 V
Positive Transient Gate-Emitter Voltage (Tpulse = 5 s, D < 0.10) 30 V
Continuous Collector Current IC 400 A
Pulsed Collector Current ICP 800 A
DIODE (D1)
Peak Repetitive Reverse Voltage VRRM 1200 V
Continuous Forward Current IF 300 A
Repetitive Peak Forward Current IFRM 600 A
DIODE (D4)
Peak Repetitive Reverse Voltage VRRM 1200 V
Continuous Forward Current IF 400 A
Repetitive Peak Forward Current IFRM 800 A
DIODE (D2, D3)
Peak Repetitive Reverse Voltage VRRM 750 V
Continuous Forward Current IF 100 A
Repetitive Peak Forward Current IFRM 200 A
DIODE (D5, D6)
Peak Repetitive Reverse Voltage VRRM 750 V
Continuous Forward Current IF 500 A
Repetitive Peak Forward Current IFRM 1000 A
Insulation
Isolation Test Voltage, t = 1 s, 50 Hz Viso 4000 VRMS
Temperature
Storage Temperature Tstg -40 to +125 °C
Operating Temperature Tvjop -40 to +150 °C
Junction Temperature Tj -40 to +175 °C

Electrical Characteristics (@ Tj = 25°C, unless otherwise specified.)

IGBT (Q1, Q4)
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 600 A, Tj = 25°C — 1.80 — V
VGE = 15 V, IC = 600 A, Tj = 150°C — 2.35 — V
Gate-Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 9 mA, Tj = 25°C — 5.50 — V
Total Gate Charge Qg VGE = -7/+15 V, VCE = 600 V, Tj = 25°C — 3.49 — µC
Gate-Source Leakage Current IGES VGE = ±25 V, VCE = 0 V, Tj = 25°C -100 — 100 nA
Collector-Emitter Voltage V(BR)CES VGE = 0 V, Tj = 25°C 1200 — — V
Collector-Emitter Cutoff Current ICES VCE = 1200 V, VGE = 0 V, Tj = 25°C — — 100 µA
Input Capacitance Ciss VGE = 0 V, VCE = 30 V, f = 100 KHz, Tj = 25°C — 66.4 — nF
Output Capacitance Coss — 1.77 — nF
Reverse Transfer Capacitance Crss — 0.19 — nF
Turn-on Delay Time td(on) VGE = -7/+15 V, VDC+ = 470 V, VDC- = 470 V, IC = 300 A, RG(on) = 2.0 Ω, RG(off) = 0.5 Ω, Tj = 25°C — 50 — ns
Tj = 150°C — 100 — ns
Rise Time tr Tj = 25°C — 40 — ns
Tj = 150°C — 50 — ns
Turn-off Delay Time td(off) Tj = 25°C — 150 — ns
Tj = 150°C — 225 — ns
Fall Time tf Tj = 25°C — 160 — ns
Tj = 150°C — 230 — ns
Turn-on Switching Loss Eon Tj = 25°C — 10.92 — mJ
Tj = 150°C — 17.10 — mJ
Turn-off Switching Loss Eoff Tj = 25°C — 12.66 — mJ
Tj = 150°C — 19.36 — mJ
Thermal Resistance - Chip-to-Case RthJC Per IGBT — 0.063 — °C/W
DIODE (D5, D6)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage VF IF = 500 A, Tj = 25°C — 1.84 — V
IF = 500 A, Tj = 150°C — 1.98 — V
Reverse Recovery Time TRR VGE = -7/+15 V, VDC+ = 470 V, VDC- = 470 V, IC = 300 A, RG(on) = 2.0 Ω, RG(off) = 0.5 Ω, Tj = 25°C — 160 — ns
Tj = 150°C — 245 — ns
Reverse Recovery Charge QRR Tj = 25°C — 15.6 — µC
Tj = 150°C — 38.0 — µC
Peak Reverse Recovery Current IRRM Tj = 25°C — 250 — A
Tj = 150°C — 315 — A
Reverse Recovery Energy EREC Tj = 25°C — 5.50 — mJ
Tj = 150°C — 10.98 — mJ
Thermal Resistance - Chip-to-Case RthJC Per diode — 0.135 — °C/W
IGBT (Q2, Q3)
Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 400 A, Tj = 25°C — 1.50 — V
VGE = 15 V, IC = 400 A, Tj = 150°C — 1.73 — V
Gate-Emitter Threshold Voltage VGE(TH) VGE = VCE, IC = 9 mA, Tj = 25°C — 4.10 — V
Total Gate Charge Qg VGE = -7/+15 V, VCE = 600 V, Tj = 25°C — 0.96 — µC
Gate-Source Leakage Current IGES VGE = ±25 V, VCE = 0 V, Tj = 25°C -100 — 100 nA
Collector-Emitter Voltage V(BR)CES VGE = 0 V, IC = 250 µA, Tj = 25°C 750 — — V
Collector-Emitter Cutoff Current ICES VCE = 750 V, VGE = 0 V, Tj = 25°C — — 100 µA
Input Capacitance Ciss VGE = 0 V, VCE = 30 V, f = 100 KHz, Tj = 25°C — 14 — nF
Output Capacitance Coss — 0.79 — nF
Reverse Transfer Capacitance Crss — 0.10 — nF
Turn-on Delay Time (Q3) td(on) VGE = -7/+15 V, VDC+ = 470 V, VDC- = 470 V, IC = 300 A, RG(on) = 10 Ω, RG(off) = 36 Ω, Tj = 25°C — 35 — ns
Tj = 150°C — 68 — ns
Rise Time (Q3) tr Tj = 25°C — 30 — ns
Tj = 150°C — 46 — ns
Turn-off Delay Time (Q3) td(off) Tj = 25°C — 980 — ns
Tj = 150°C — 1550 — ns
Fall Time (Q3) tf Tj = 25°C — 45 — ns
Tj = 150°C — 53 — ns
Turn-on Switching Loss (Q3) Eon Tj = 25°C — 6.50 — mJ
Tj = 150°C — 9.20 — mJ
Turn-off Switching Loss (Q3) Eoff Tj = 25°C — 12.61 — mJ
Tj = 150°C — 15.00 — mJ
Turn-on Delay Time (Q2) td(on) Tj = 25°C — 100 — ns
Tj = 150°C — 115 — ns
Rise Time (Q2) tr Tj = 25°C — 89 — ns
Tj = 150°C — 105 — ns
Turn-off Delay Time (Q2) td(off) Tj = 25°C — 1050 — ns
Tj = 150°C — 1480 — ns
Fall Time (Q2) tf Tj = 25°C — 45 — ns
Tj = 150°C — 98 — ns
Turn-on Switching Loss (Q2) Eon Tj = 25°C — 4.26 — mJ
Tj = 150°C — 6.55 — mJ
Turn-off Switching Loss (Q2) Eoff Tj = 25°C — 13.2 — mJ
Tj = 150°C — 15.1 — mJ
Thermal Resistance - Chip-to-Case RthJC Per IGBT — 0.140 — °C/W
INVERSE DIODE (D1)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage VF IF = 300 A, Tj = 25°C — 1.81 — V
IF = 300 A, Tj = 150°C — 1.94 — V
Reverse Recovery Time TRR VGE = -7/+15 V, VDC+ = 470 V, VDC- = 470 V, IC = 300 A, RG(on) = 10 Ω, RG(off) = 36 Ω, Tj = 25°C — 85 — ns
Tj = 150°C — 343 — ns
Reverse Recovery Charge QRR Tj = 25°C — 14.2 — µC
Tj = 150°C — 39.3 — µC
Peak Reverse Recovery Current IRRM Tj = 25°C — 289 — A
Tj = 150°C — 376 — A
Reverse Recovery Energy EREC Tj = 25°C — 6.0 — mJ
Tj = 150°C — 17.0 — mJ
Thermal Resistance - Chip-to-Case RthJC Per diode — 0.119 — °C/W
INVERSE DIODE (D4)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage VF IF = 400 A, Tj = 25°C — 1.89 — V
IF = 400 A, Tj = 150°C — 2.00 — V
Reverse Recovery Time TRR VGE = -7/+15 V, VDC+ = 470 V, VDC- = 470 V, IC = 300 A, RG(on) = 10 Ω, RG(off) = 36 Ω, Tj = 25°C — 90 — ns
Tj = 150°C — 300 — ns
Reverse Recovery Charge QRR Tj = 25°C — 15.4 — µC
Tj = 150°C — 45.2 — µC
Peak Reverse Recovery Current IRRM Tj = 25°C — 280 — A
Tj = 150°C — 360 — A
Reverse Recovery Energy EREC Tj = 25°C — 8.07 — mJ
Tj = 150°C — 22.0 — mJ
Thermal Resistance - Chip-to-Case RthJC Per diode — 0.102 — °C/W
INVERSE DIODE (D2, D3)
Parameter Symbol Conditions Min Typ Max Unit
Diode Forward Voltage VF IF = 100 A, Tj = 25°C — 1.62 — V
IF = 100 A, Tj = 150°C — 1.68 — V
NTC-Thermistor
Parameter Symbol Min Typ Max Unit Conditions
Rated resistance R25 — 5 — kΩ TC = 25°C
Deviation of R100 ΔR/R -5 — 5 % TC = 100°C, R100 = 493 Ω
B-value B25/50 — 3375 — K
Module Characteristics
Parameter Symbol Min Typ Max Unit Conditions
Mounting Torque (Screw M5) M 3.0 — 5.0 N·m
Creepage Distance — 16.2 — mm terminal to heatsink
Clearance — 15.2 — mm terminal to heatsink
CTI — ≥600 —
Flatness of base plate — — 0.3 mm

Notes:

Confidential Shared Under NDA.

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