Product Detail
SMP6010ALAE
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- P
- VDS_Max
- -60 V
- RDS(ON)_Max @VGS=10V
- 10 mΩ
- RDS(ON)_Typ @VGS=10V
- 7.2 mΩ
- VGS(th)_Typ
- -1.8 V
- With ESD
- No
- Die Size (μm×μm)
- 3300*2000
- Gross Die (8" wafer)
- 4275
- Wafer Thickness (μm)
- 150±15
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 9.6 mΩ
- RDS(ON)_Max @VGS=4.5V
- 12.5 mΩ
- Ciss_Typ
- 3559 pF
- Coss_Typ
- 912 pF
- Crss_Typ
- 36 pF
- Qg_Typ
- 47 nC
- Qgs_Typ
- 10 nC
- Qgd_Typ
- 5 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT P
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →