SMP6050ALAE product image

Product Detail

SMP6050ALAE

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
P
VDS_Max
-60 V
RDS(ON)_Max @VGS=10V
50 mΩ
RDS(ON)_Typ @VGS=10V
37 mΩ
VGS(th)_Typ
-1.8 V
With ESD
No
Die Size (μm×μm)
1580*1000
Gross Die (8" wafer)
17802
Wafer Thickness (μm)
150±15
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
50 mΩ
RDS(ON)_Max @VGS=4.5V
65 mΩ
Ciss_Typ
668 pF
Coss_Typ
222 pF
Crss_Typ
12 pF
Qg_Typ
12 nC
Qgs_Typ
1.8 nC
Qgd_Typ
1.6 nC
Tj
150 °C
Manufacturer Remarks
SGT P