Wafer / bare-die (KGD) parts serve customers doing their own packaging, module integration or co-packaging. Selection differs from packaged parts: beyond electrical specs, check die size, wafer format and thickness grade.
Reading the Key Parameters
- Process / Configuration: SGT, Trench and SJ (superjunction) process lines coexist, covering N-channel, P-channel and dual-N common-drain — lock these first by topology and drive polarity.
- VDS_Max: roughly 12V–200V in the catalog, P-channel down to -100V; SJ (superjunction) parts sit in the 650V class — see each product page for the rated voltage. Pick by bus voltage plus spike margin.
- RDS(ON) (rated at VGS=10V / 4.5V / 2.5V): from about 1 mΩ up to several thousand mΩ (small-current dies). For low-voltage gate drive, check the 4.5V/2.5V columns — not just the 10V figure.
- Die Size & Gross Die: die sizes span roughly 320×310 to 7000×7450; gross die per 8" wafer ranges from hundreds to hundreds of thousands, directly setting per-die cost and capacity planning. Some parts offer 12" wafer formats.
- Wafer Thickness: multiple thinning grades from 60±10 to 200±20 — match your packaging or sintering process.
- With ESD: some dies integrate ESD structures — prefer them for co-packaging or unprotected-gate scenarios.
Three Steps
- Lock process line, channel configuration and VDS class by topology;
- Check RDS(ON) at your actual gate-drive voltage, balancing Qg and capacitances;
- Confirm die size, thinning grade and wafer format (8"/12") against your packaging flow, then run cost from gross die.
Common Pitfalls
- Inferring die performance from packaged-part RDS(ON), ignoring the package-resistance share;
- Reading only the 10V on-resistance while driving the gate at logic levels;
- Skipping the thickness-versus-process match and discovering warpage/cracking at reflow or sintering.
Filter by process, voltage and RDS(ON) in the online parametric tool; for wafer supply terms and volume lead times, submit a part-number inquiry.