Product Detail
BSS84K
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- Trench
- Configuration
- P
- VDS_Max
- -60 V
- RDS(ON)_Max @VGS=10V
- 5900 mΩ
- RDS(ON)_Typ @VGS=10V
- 3000 mΩ
- VGS(th)_Typ
- -1.6 V
- With ESD
- Yes
- Die Size (μm×μm)
- 320*310
- Gross Die (8" wafer)
- 290666
- Wafer Thickness (μm)
- 125±12
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 3500 mΩ
- RDS(ON)_Max @VGS=4.5V
- 8600 mΩ
- Ciss_Typ
- 29 pF
- Coss_Typ
- 10 pF
- Crss_Typ
- 5 pF
- Qg_Typ
- 0.91 nC
- Qgs_Typ
- 0.26 nC
- Qgd_Typ
- 0.08 nC
- Tj
- 150 °C
- Manufacturer Remarks
- Trench P
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →