Product Detail
SYNM6014CLW
synapsechip.comOur Products
Specifications
- Configuration
- N
- VDS_Max
- 60 V
- RDS(ON)_Max @VGS=10V
- 13.8 mΩ
- RDS(ON)_Typ @VGS=10V
- 11.5 mΩ
- VGS(th)_Typ
- 1.7 V
- Die Size (μm×μm)
- 1440*990(含划片槽)
- Gross Die (8" wafer)
- 20001
- Wafer Thickness (μm)
- 150±15
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 14.5 mΩ
- RDS(ON)_Max @VGS=4.5V
- 17.4 mΩ
- Ciss_Typ
- 625 pF
- Coss_Typ
- 191 pF
- Crss_Typ
- 8.4 pF
- Qg_Typ
- 10.5 nC
- Qgs_Typ
- 1.8 nC
- Qgd_Typ
- 2.3 nC
- Tj
- -55~+150 °C
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →
Online Datasheet
Full text of the synapsechip.com datasheet; refer to the latest revision for updates.
SYNM6014CLW
60V N-Channel Power MOSFET
WAFER DATASHEET
Features
- VDS = 60 V
- RDS(ON)_TYP = 11.5 mΩ (VGS = 10 V)
- RDS(ON)_TYP = 14.5 mΩ (VGS = 4.5 V)
Applications
- Load Switching
- Motor Driver
- High Frequency Switching
Chip Information
| Parameter | Value |
|---|---|
| Die Size (include scribe line) | 1440 μm × 990 μm |
| Gate Pad Size | 153 μm × 153 μm |
| Source Pad Size | Full Metalized Source |
| Scribe Line Size | 60 μm |
| Wafer Thickness | 150 μm ± 15 μm |
| Wafer Diameter | 200 mm |
| Polyimide | Yes |
| Front Metal Composition & Thickness | AlCu, 5 μm |
| Back Metal Composition & Thickness | Ti/Ni/Ag, 1.4 μm |
| Gross Die (approximately) | 20,001 |
| Recommended Package | PDFN5060-8L |
Maximum Ratings
（@ TA = 25 °C, unless otherwise specified.）
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain–Source Voltage | VDS | 60 | V |
| Gate–Source Voltage | VGS | ±20 | V |
| Junction and Storage Temperature Range | TJ, TSTG | −55 ~ +150 | °C |
Ordering Information
| Orderable Part Number | Wafer Description |
|---|---|
| SYNM6014CLW | Sampling Tested Wafer |
| SYNM6014CLW-C | Full CP Tested Wafer |
Electrical Characteristics
（@ TJ = 25 °C, unless otherwise specified.）
Off Characteristics
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain–Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 μA | 60 | — | — | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V | — | — | 1.0 | μA |
| Gate–Body Leakage Current | IGSS | VGS = ±20 V, VDS = 0 V | — | — | ±100 | nA |
On Characteristics (1)
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250 μA | 1.2 | 1.7 | 2.5 | V |
| Static Drain–Source On-Resistance (1) | RDS(ON) | VGS = 10 V, ID = 20 A | — | 11.5 | 13.8 | mΩ |
| Static Drain–Source On-Resistance (1) | RDS(ON) | VGS = 4.5 V, ID = 15 A | — | 14.5 | 17.4 | mΩ |
| Diode Forward Voltage | VSD | IS = 2.0 A, VGS = 0 V | — | 0.7 | 1.2 | V |
Dynamic Characteristics
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Input Capacitance | Ciss | VDS = 30 V, VGS = 0 V, f = 1 MHz | — | 625 | — | pF |
| Output Capacitance | Coss | VDS = 30 V, VGS = 0 V, f = 1 MHz | — | 191 | — | pF |
| Reverse Transfer Capacitance | Crss | VDS = 30 V, VGS = 0 V, f = 1 MHz | — | 8.4 | — | pF |
| Gate Resistance | Rg | VGS = 0 V, VDS = 0 V, f = 1 MHz | — | 1.2 | — | Ω |
Gate Charge Characteristics
（Test Condition: VDS = 30 V, ID = 20 A, VGS = 10 V.）
| Parameter | Symbol | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Total Gate Charge | Qg | — | 10.5 | — | nC |
| Gate–Source Charge | Qgs | — | 1.8 | — | nC |
| Gate–Drain Charge | Qgd | — | 2.3 | — | nC |
| Gate Plateau Voltage | Vplateau | — | 3.2 | — | V |
Drain–Source Diode Characteristics
（Test Condition: IF = 20 A, dI/dt = 100 A/μs, TJ = 25 °C.）
| Parameter | Symbol | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Body Diode Reverse Recovery Time | trr | — | 24.0 | — | ns |
| Body Diode Reverse Recovery Charge | Qrr | — | 11.7 | — | nC |
Notes
- RDS(ON) value is referred by the device assembled in PDFN5060-8L.
Important Notice
Information in this document is provided in connection with 突触半导体 products and is subject to change without notice. Customers are responsible for verifying that the product is suitable for their application; no license to any intellectual property right is granted by this document.
SYNM6014CLW · Rev 1.0 · 2026-07 深圳市突触半导体有限公司 · synapsechip.com Page 1–2 of 2