Product Detail
SMT6005ALAE
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 60 V
- RDS(ON)_Max @VGS=10V
- 4.1 mΩ
- RDS(ON)_Typ @VGS=10V
- 3.4 mΩ
- VGS(th)_Typ
- 1.7 V
- With ESD
- No
- Die Size (μm×μm)
- 2440*1700
- Gross Die (8" wafer)
- 6774
- Wafer Thickness (μm)
- 150±15
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 4.5 mΩ
- RDS(ON)_Max @VGS=4.5V
- 5.7 mΩ
- Ciss_Typ
- 1792 pF
- Coss_Typ
- 901 pF
- Crss_Typ
- 32 pF
- Qg_Typ
- 33 nC
- Qgs_Typ
- 5.6 nC
- Qgd_Typ
- 7.3 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT N
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →
