SMT6005ALAE product image

Product Detail

SMT6005ALAE

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
60 V
RDS(ON)_Max @VGS=10V
4.1 mΩ
RDS(ON)_Typ @VGS=10V
3.4 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
2440*1700
Gross Die (8" wafer)
6774
Wafer Thickness (μm)
150±15
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
4.5 mΩ
RDS(ON)_Max @VGS=4.5V
5.7 mΩ
Ciss_Typ
1792 pF
Coss_Typ
901 pF
Crss_Typ
32 pF
Qg_Typ
33 nC
Qgs_Typ
5.6 nC
Qgd_Typ
7.3 nC
Tj
175 °C
Manufacturer Remarks
SGT N