SMT6002BLPC product image

Product Detail

SMT6002BLPC

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
60 V
RDS(ON)_Max @VGS=10V
2.9 mΩ
RDS(ON)_Typ @VGS=10V
2.4 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
3000*1800
Gross Die (8" wafer)
5066
Wafer Thickness (μm)
90±10
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
3.4 mΩ
RDS(ON)_Max @VGS=4.5V
4.1 mΩ
Ciss_Typ
2376 pF
Coss_Typ
1153 pF
Crss_Typ
58 pF
Qg_Typ
42 nC
Qgs_Typ
6.6 nC
Qgd_Typ
9.3 nC
Tj
175 °C
Manufacturer Remarks
SGT With Plating