Product Detail
SMT6002ALAD
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 60 V
- RDS(ON)_Max @VGS=10V
- 2.5 mΩ
- RDS(ON)_Typ @VGS=10V
- 2.1 mΩ
- VGS(th)_Typ
- 1.7 V
- With ESD
- No
- Die Size (μm×μm)
- 3300*2000
- Gross Die (8" wafer)
- 4120
- Wafer Thickness (μm)
- 105±10
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 3 mΩ
- RDS(ON)_Max @VGS=4.5V
- 3.8 mΩ
- Ciss_Typ
- 2965 pF
- Coss_Typ
- 916 pF
- Crss_Typ
- 29 pF
- Qg_Typ
- 56 nC
- Qgs_Typ
- 6.7 nC
- Qgd_Typ
- 12 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT N
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