SMT6002AHAD product image

Product Detail

SMT6002AHAD

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
60 V
RDS(ON)_Max @VGS=10V
2.9 mΩ
RDS(ON)_Typ @VGS=10V
2.4 mΩ
VGS(th)_Typ
3 V
With ESD
No
Die Size (μm×μm)
3300*2000
Gross Die (8" wafer)
4120
Wafer Thickness (μm)
105±10
VGS_Max
±20 V
Ciss_Typ
3335 pF
Coss_Typ
647 pF
Crss_Typ
23 pF
Qg_Typ
54 nC
Qgs_Typ
13.8 nC
Qgd_Typ
14.4 nC
Tj
175 °C
Manufacturer Remarks
SGT N