Product Detail
SMT6003DLAD
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 60 V
- RDS(ON)_Max @VGS=10V
- 3.8 mΩ
- RDS(ON)_Typ @VGS=10V
- 3.2 mΩ
- VGS(th)_Typ
- 1.7 V
- With ESD
- No
- Die Size (μm×μm)
- 3000*1800
- Gross Die (8" wafer)
- 5066
- Wafer Thickness (μm)
- 105±10
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 4.1 mΩ
- RDS(ON)_Max @VGS=4.5V
- 5.1 mΩ
- Ciss_Typ
- 2494 pF
- Coss_Typ
- 468 pF
- Crss_Typ
- 22 pF
- Qg_Typ
- 46 nC
- Qgs_Typ
- 7.3 nC
- Qgd_Typ
- 10.4 nC
- Tj
- 150 °C
- Manufacturer Remarks
- SGT N
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