SMT6002AHPC product image

Product Detail

SMT6002AHPC

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
60 V
RDS(ON)_Max @VGS=10V
2.2 mΩ
RDS(ON)_Typ @VGS=10V
1.8 mΩ
VGS(th)_Typ
3 V
With ESD
No
Die Size (μm×μm)
3300*2000
Gross Die (8" wafer)
4120
Wafer Thickness (μm)
90±10
VGS_Max
±20 V
Ciss_Typ
3192 pF
Coss_Typ
1305 pF
Crss_Typ
71 pF
Qg_Typ
49 nC
Qgs_Typ
12.9 nC
Qgd_Typ
12.1 nC
Tj
175 °C
Manufacturer Remarks
SGT With Plating