SMT6001AHAD product image

Product Detail

SMT6001AHAD

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
60 V
RDS(ON)_Max @VGS=10V
1.9 mΩ
RDS(ON)_Typ @VGS=10V
1.6 mΩ
VGS(th)_Typ
3 V
With ESD
No
Die Size (μm×μm)
3540*2800
Gross Die (8" wafer)
2723
Wafer Thickness (μm)
105±10
VGS_Max
±20 V
Ciss_Typ
5483 pF
Coss_Typ
2514 pF
Crss_Typ
98 pF
Qg_Typ
94 nC
Qgs_Typ
25 nC
Qgd_Typ
23 nC
Tj
175 °C
Manufacturer Remarks
SGT N