Product Detail
SMT6001AHAD
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 60 V
- RDS(ON)_Max @VGS=10V
- 1.9 mΩ
- RDS(ON)_Typ @VGS=10V
- 1.6 mΩ
- VGS(th)_Typ
- 3 V
- With ESD
- No
- Die Size (μm×μm)
- 3540*2800
- Gross Die (8" wafer)
- 2723
- Wafer Thickness (μm)
- 105±10
- VGS_Max
- ±20 V
- Ciss_Typ
- 5483 pF
- Coss_Typ
- 2514 pF
- Crss_Typ
- 98 pF
- Qg_Typ
- 94 nC
- Qgs_Typ
- 25 nC
- Qgd_Typ
- 23 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT N
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →
