Product Detail
SMT6001ALPC
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 60 V
- RDS(ON)_Max @VGS=10V
- 1.5 mΩ
- RDS(ON)_Typ @VGS=10V
- 1.3 mΩ
- VGS(th)_Typ
- 1.7 V
- With ESD
- No
- Die Size (μm×μm)
- 3540*2800
- Gross Die (8" wafer)
- 2723
- Wafer Thickness (μm)
- 90±10
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 1.4 mΩ
- RDS(ON)_Max @VGS=4.5V
- 1.8 mΩ
- Ciss_Typ
- 4898 pF
- Coss_Typ
- 2506 pF
- Crss_Typ
- 95 pF
- Qg_Typ
- 91 nC
- Qgs_Typ
- 11.7 nC
- Qgd_Typ
- 19 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT With Plating
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →
