SMT6001ALPC product image

Product Detail

SMT6001ALPC

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
60 V
RDS(ON)_Max @VGS=10V
1.5 mΩ
RDS(ON)_Typ @VGS=10V
1.3 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
3540*2800
Gross Die (8" wafer)
2723
Wafer Thickness (μm)
90±10
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
1.4 mΩ
RDS(ON)_Max @VGS=4.5V
1.8 mΩ
Ciss_Typ
4898 pF
Coss_Typ
2506 pF
Crss_Typ
95 pF
Qg_Typ
91 nC
Qgs_Typ
11.7 nC
Qgd_Typ
19 nC
Tj
175 °C
Manufacturer Remarks
SGT With Plating