Product Detail
SMT6001BLPC
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 60 V
- RDS(ON)_Max @VGS=10V
- 1.1 mΩ
- RDS(ON)_Typ @VGS=10V
- 0.9 mΩ
- VGS(th)_Typ
- 1.7 V
- With ESD
- No
- Die Size (μm×μm)
- 4140*3420
- Gross Die (8" wafer)
- 1889
- Wafer Thickness (μm)
- 90±10
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 1.2 mΩ
- RDS(ON)_Max @VGS=4.5V
- 1.5 mΩ
- Ciss_Typ
- 6518 pF
- Coss_Typ
- 2947 pF
- Crss_Typ
- 122 pF
- Qg_Typ
- 119 nC
- Qgs_Typ
- 16 nC
- Qgd_Typ
- 25 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT With Plating
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT6001BLPC
60V N-Channel Power MOSFET
Product Summary
- VDS = 60V
- RDS(ON), max = 0.9mΩ (VGS = 10V)
- RDS(ON), max = 1.2mΩ (VGS = 4.5V)
Potential Applications
- Load Switching
- Motor Driver
- High Frequency Switching
Chip Information
| Parameter | Value |
|---|---|
| Die Size (with scribe line) | 4140µm × 3420µm |
| Gate Pad Size | 390µm × 350µm |
| Source Pad Size | Full Metalized Source |
| Scribe Line Width | 80µm |
| Wafer Thickness | 90µm ± 10µm |
| Wafer Diameter | 8 inch |
| Polyimide | Yes |
| Front Metal Composition & Thickness | NiPdAu,3µm/0.05µm/0.03µm |
| Back Metal Composition & Thickness | Ti/Ni/Ag, 1.3µm |
| Gross Die (approximately) | 1,996 |
Ordering Information
| Orderable Part Number | Wafer Description |
|---|---|
| SMT6001BLPC | Sampling Tested Wafer |
| SMT6001BLPC-C | Full CP Tested Wafer |
Maximum Ratings (@ TJ = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain - Source Voltage | VDS | 60 | V |
| Gate - Source Voltage | VGS | ±20 | V |
| Junction Temperature Range | TJ | -55 ~ +175 | °C |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 60 | — | — | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 60V, VGS = 0V | — | — | 1.0 | µA |
| Gate-Body Leakage Current | IGSS | VGS = ±20V, VDS = 0V | — | — | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 250µA | 1.2 | 1.7 | 2.6 | V |
| Static Drain-Source On-Resistance (1) | RDS(on) | VGS = 10V, ID = 20A | — | 0.9 | 1.1 | mΩ |
| VGS = 4.5V, ID = 15A | — | 1.2 | 1.5 | mΩ | ||
| Diodes Forward Voltage | VSD | IS = 2.0A, VGS = 0V | — | 0.7 | 1.0 | V |
Notes:
- RDS(on) value is referred by the device assembled in PDFN5060-8L.