Product Detail
SMT6001BHPC
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 60 V
- RDS(ON)_Max @VGS=10V
- 1.1 mΩ
- RDS(ON)_Typ @VGS=10V
- 0.9 mΩ
- VGS(th)_Typ
- 3 V
- With ESD
- No
- Die Size (μm×μm)
- 4140*3420
- Gross Die (8" wafer)
- 1889
- Wafer Thickness (μm)
- 90±10
- VGS_Max
- ±20 V
- Ciss_Typ
- 7204 pF
- Coss_Typ
- 3129 pF
- Crss_Typ
- 202 pF
- Qg_Typ
- 108 nC
- Qgs_Typ
- 26 nC
- Qgd_Typ
- 24 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT With Plating
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