SMT6013CLAE product image

Product Detail

SMT6013CLAE

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
60 V
RDS(ON)_Max @VGS=10V
13.8 mΩ
RDS(ON)_Typ @VGS=10V
11.5 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
1440*990
Gross Die (8" wafer)
20001
Wafer Thickness (μm)
150±15
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
14.5 mΩ
RDS(ON)_Max @VGS=4.5V
17.4 mΩ
Ciss_Typ
625 pF
Coss_Typ
191 pF
Crss_Typ
8.4 pF
Qg_Typ
10.5 nC
Qgs_Typ
1.8 nC
Qgd_Typ
2.3 nC
Tj
150 °C
Manufacturer Remarks
FAB 2 SGT