Product Detail
SMT6013CLAE
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 60 V
- RDS(ON)_Max @VGS=10V
- 13.8 mΩ
- RDS(ON)_Typ @VGS=10V
- 11.5 mΩ
- VGS(th)_Typ
- 1.7 V
- With ESD
- No
- Die Size (μm×μm)
- 1440*990
- Gross Die (8" wafer)
- 20001
- Wafer Thickness (μm)
- 150±15
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 14.5 mΩ
- RDS(ON)_Max @VGS=4.5V
- 17.4 mΩ
- Ciss_Typ
- 625 pF
- Coss_Typ
- 191 pF
- Crss_Typ
- 8.4 pF
- Qg_Typ
- 10.5 nC
- Qgs_Typ
- 1.8 nC
- Qgd_Typ
- 2.3 nC
- Tj
- 150 °C
- Manufacturer Remarks
- FAB 2 SGT
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →
