Product Detail
SMP10T40ALAE
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- P
- VDS_Max
- -100 V
- RDS(ON)_Max @VGS=10V
- 40 mΩ
- RDS(ON)_Typ @VGS=10V
- 30 mΩ
- VGS(th)_Typ
- -1.8 V
- With ESD
- No
- Die Size (μm×μm)
- 2570*1735
- Gross Die (8" wafer)
- 6309
- Wafer Thickness (μm)
- 150±15
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 36 mΩ
- RDS(ON)_Max @VGS=4.5V
- 50 mΩ
- Ciss_Typ
- 1402 pF
- Coss_Typ
- 317 pF
- Crss_Typ
- 14 pF
- Qg_Typ
- 23 nC
- Qgs_Typ
- 4.9 nC
- Qgd_Typ
- 4.2 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT P
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