Specifications
- Automotive (Y/N)
- N
- Package
- TO220F-3L
- Configuration
- N
- Tj
- 175 °C
- VDS_Max
- 800 V
- ID_Max
- 9 A
- VGS_Max
- -10/+22 V
- VGS(th)_Typ
- 3.4 V
- RDS(ON)_Typ @VGS=18V,25°C
- 390 mΩ
- RDS(ON)_Max @VGS=18V,25°C
- 450 mΩ
- RDS(ON)_Typ @VGS=18V,175°C
- 520 mΩ
- Ciss_Typ
- 208 pF
- Coss_Typ
- 18 pF
- Crss_Typ
- 1.8 pF
- Qg_Typ
- 10.6 nC
- MPQ
- 1000 pcs
- MOQ
- 5000 pcs
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Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SCMP80R390BF
800V N-Channel Silicon Carbide Power MOSFET
Product Summary
| VDS |
RDS(ON)_TYP |
I_D_MAX |
| 800 V |
390 mΩ @VGS = 18V |
9.0 A |
TO220F-3L
PIN Configuration (Top View): G D S
Features
- High blocking voltage with low On-Resistance
- High speed switching with low capacitances
- Easy to parallel and simple to drive
- Avalanche ruggedness
- Halogen free, RoHS compliant
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
Applications
- Solar inverters
- Switch mode power supplies
- High voltage DC/DC converters
- Battery chargers
- Motor drives
- Pulsed power applications
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SCMP80R390BF |
TO220F-3L |
P80R390B |
Tube |
50 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Test Condition |
Value |
Unit |
| Drain - Source Voltage |
VDSmax |
VGS = 0 V, ID = 100 µA |
800 |
V |
| Gate - Source Voltage |
VGSmax |
Absolute maximum values |
-10/+22 |
V |
| Gate - Source Voltage |
VGSop |
Recommended operating values |
-5/+18 |
V |
| Continuous Drain Current (1) |
ID |
TC = 25°C |
9.0 |
A |
|
|
TC = 100°C |
6.0 |
A |
| Pulsed Drain Current (2) |
IDM |
— |
26 |
A |
| Total Power Dissipation |
PTOT |
TC = 25°C, TC = 175°C |
52 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
— |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ. |
Max. |
Unit |
| Thermal Resistance, Junction-to-Ambient |
R_θJA |
40 |
— |
°C/W |
| Thermal Resistance, Junction-to-Case |
R_θJC |
2.88 |
— |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 1.0mA |
800 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 800V, VGS = 0V |
— |
2.0 |
100 |
µA |
| Gate-Source Leakage Current |
IGSS+ |
VGS = +22V, VDS = 0V |
— |
— |
200 |
nA |
| Gate-Source Leakage Current |
IGSS- |
VGS = -10V, VDS = 0V |
— |
— |
200 |
nA |
On Characteristics
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VGS = VDS, IDS = 1.0mA, TJ = 25°C |
2.2 |
3.4 |
4.2 |
V |
|
|
VGS = VDS, IDS = 1.0mA, TJ = 175°C |
— |
2.6 |
— |
V |
| Static Drain-Source On-Resistance |
RDS(ON) |
VGS = 18V, ID = 5.0A, TJ = 25°C |
— |
390 |
450 |
mΩ |
|
|
VGS = 18V, ID = 5.0A, TJ = 175°C |
— |
520 |
— |
mΩ |
| Diodes Forward Voltage |
VSD |
VGS = -5V, ISD = 2.5A, TJ = 25°C |
— |
4.0 |
— |
V |
|
|
VGS = -5V, ISD = 2.5A, TJ = 175°C |
— |
3.6 |
— |
V |
Dynamic Characteristics
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Input Capacitance |
Ciss |
|
— |
208 |
— |
pF |
| Output Capacitance |
Coss |
VDS = 400V, VGS = 0V, f = 1MHz |
— |
18 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
1.8 |
— |
pF |
| Internal Gate Resistance |
RG(int) |
f = 1MHz, ID = 0A |
— |
59 |
— |
Ω |
Switching Characteristics
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Turn-On Switching Energy |
Eon |
VDD = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V |
— |
25 |
— |
µJ |
| Turn-Off Switching Energy |
Eoff |
|
— |
10 |
— |
µJ |
| Turn-On Delay Time |
td(on) |
|
— |
5 |
— |
ns |
| Rise Time |
tr |
VDD = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V |
— |
17 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
8 |
— |
ns |
| Fall Time |
tf |
|
— |
10 |
— |
ns |
Gate Charge Characteristics
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Total Gate Charge |
Qg |
|
— |
10.6 |
— |
nC |
| Gate-Source Charge |
Qgs |
VDD = 400V, VGS = -5/18 V, ID = 5.0A |
— |
5.1 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
2.2 |
— |
nC |
Drain-Source Diode Characteristics
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Reverse Recovery Time |
trr |
VDD = 400V, VGS = -5V, ISD = 5.0 A, di/dt = 1000A/µs |
— |
50 |
— |
ns |
| Reverse Recovery Charge |
Qrr |
|
— |
38 |
— |
nC |
| Peak Reverse Recovery Current |
IRRM |
|
— |
2.4 |
— |
A |
| Continuous Diode Forward Current (3) |
ISD |
TJ = 25°C |
— |
— |
11 |
A |
|
|
TJ = 175°C |
— |
— |
6.0 |
A |
Notes:
- Continuous Drain Current is limited by package.
- Pulse width is limited by Safe Operating Area (SOA).
- Continuous Diode Forward Current is limited by bonding wires.
Typical Electrical and Thermal Characteristics
（原 datasheet 含 17 曲线图，此处略）
- Figure 1. Safe Operating Area
- Figure 2. Maximum Transient Thermal Impedance
- Figure 3. Typical Output Characteristics, TJ = 25°C
- Figure 4. Typical Output Characteristics, TJ = 175°C
- Figure 5. Typical Transfer Characteristics
- Figure 6. Total Power Dissipation
- Figure 7. Typical Gate Charge Characteristics
- Figure 8. Typical Capacitance Characteristics
- Figure 9. Typical Switching Energy vs. Supply Voltage
- Figure 10. Typical Switching Energy vs. Drain Current
- Figure 11. Typical Switching Energy vs. Gate Resistance
- Figure 12. Typical Switching Energy vs. Temperature
- Figure 13. Breakdown Voltage vs. Temperature
- Figure 14. Gate Threshold vs. Temperature
- Figure 15. On-Resistance vs. Temperature
- Figure 16. Body Diode Characteristics, TJ = 25°C
- Figure 17. Body Diode Characteristics, TJ = 175°C
TO220F-3L Package Outline
Package Notes:
- Dimensioning and tolerancing per ASME Y14.5M-1994.
- All dimensions in millimeter (angle in degree).
- Dimensions D and E1 do not include mold flash.
| DIM. |
MIN. |
NOM. |
MAX. |
| A |
4.50 |
4.70 |
4.90 |
| A1 |
2.34 |
2.54 |
2.74 |
| A2 |
2.50 |
2.76 |
2.96 |
| b |
0.60 |
0.80 |
1.00 |
| b1 |
— |
— |
1.47 |
| b2 |
1.10 |
— |
1.38 |
| c |
0.40 |
0.50 |
0.63 |
| c1 |
0.70 REF |
|
|
| D |
9.96 |
— |
10.40 |
| e |
2.54 BSC |
|
|
| E |
28.30 |
28.85 |
29.35 |
| E1 |
15.67 |
15.87 |
16.10 |
| G |
3.20 |
— |
3.40 |
| L |
12.68 |
— |
13.30 |
| L1 |
— |
— |
3.50 |
| L2 |
6.48 |
6.68 |
6.88 |
| P |
3.30 REF |
|
|
| θ |
0° |
— |
12° |
单位：MILLIMETER
