SCMP65R390BF

SCMP65R390BF

650V N-Channel Silicon Carbide Power MOSFET

Features

• High blocking voltage with low On-Resistance
• High speed switching with low capacitances
• Easy to parallel and simple to drive
• Avalanche ruggedness
• Halogen free, RoHS compliant

Benefits

• Higher system efficiency
• Reduced cooling requirements
• Increased power density
• Increased system switching frequency

Applications

• Solar inverters
• Switch mode power supplies
• High voltage DC/DC converters
• Battery chargers
• Motor drives
• Pulsed power applications

Product Summary

TO220F-3L

PIN Configuration (Top View): G D S

Ordering Information

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Thermal Characteristics

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Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ⁽⁶⁾

On Characteristics ⁽⁶⁾

Dynamic Characteristics ⁽⁷⁾

Switching Characteristics ⁽⁷⁾

Gate Charge Characteristics ⁽⁷⁾

Drain-Source Diode Characteristics ⁽⁷⁾

Notes:

1. This current is chip limited, which is calculated based on Rthjc.
2. This current is calculated on single pulse with 10µs Single Pulse.
3. Defined by design, not subject to production test, E_AS condition: T_J = 25°C, V_DD = 325V, V_GS = 10V, L = 10mH.
4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
5. Thermal resistance from junction to the exposed pad.
6. Short duration pulse test used to minimize self-heating effect.
7. Defined by design, not subject to production.

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Typical Electrical and Thermal Characteristics

（曲线图略）

• Figure 1: Output Characteristics T_J = 25°C（V_GS = 6.0V / 8.0V / 10V / 12V / 14V / 16V / 18V；X轴 V_DS 0–10V，Y轴 I_D 0–12A）
• Figure 2: Output Characteristics T_J = 175°C（V_GS = 6.0V / 8.0V / 10V / 12V / 14V / 16V / 18V；X轴 V_DS 0–10V，Y轴 I_D 0–8A）
• Figure 3: On-Resistance vs. Junction Temperature（I_D = 2.5A；V_GS = 18V / 15V；X轴 T_J -50–175°C，Y轴 Normalized R_DS(on) 0.0–2.5）
• Figure 4: Transfer Characteristics（V_DS = 20V；T_J = 25°C / 175°C；X轴 V_GS 0–10V，Y轴 I_D 0.00–8.00A）
• Figure 5: Body Diode Characteristic, T_J = 25°C（V_GS = 0V / -5.0V；X轴 Source-Drain Voltage V_DS 0.0–10.0V，Y轴 I_S 0.0–12.0A）
• Figure 6: Body Diode Characteristic, T_J = 175°C（V_GS = 0V / -5.0V；X轴 Source-Drain Voltage V_DS 0.0–10.0V，Y轴 I_S 0.0–12.0A）
• Figure 7: Gate Threshold Variation vs. Junction Temperature（I_D = 250µA / 1.0mA；X轴 T_J -60–180°C，Y轴 V_GS(th) 1.0–5.0V）
• Figure 8: Gate Charge Characteristics（I_D = 2.5A；X轴 Q_g Total Gate Charge 0–8 nC，Y轴 V_GS -5–18V）
• Figure 9: Capacitance Characteristics（V_GS = 0V；C_iss / C_oss / C_rss；X轴 V_DS 0–650V，Y轴 C_T 1–1000 pF，对数轴）
• Figure 10: Power Derating（X轴 T_C 0–175°C，Y轴 P_D 0–50W）
• Figure 11: Current Derating（X轴 T_C 0–175°C，Y轴 I_D 0.0–8.0A）
• Figure 12: Switching Losses vs. Drain Current（E_on / E_off / E_tot；X轴 I_D 2.5–6.5A，Y轴 Switching Loss 0–30 µJ）
• Figure 13: Switching Losses vs. Gate Resistance（E_on / E_off / E_tot；X轴 Gate Resistance 5–20 Ω，Y轴 Switching Loss 0–40 µJ）
• Figure 14: Safe Operating Area（T_J(Max) = 175°C，T_C = 25°C；脉宽 1.0µs / 10µs / 100µs / 1.0ms / DC；R_DS(ON) Limited 边界；X轴 V_DS 0.1–10000V，Y轴 I_D 0.01–100A，双对数轴）
• Figure 15: Normalized Maximum Transient Thermal Impedance（δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse；注1：Duty cycle δ = t₁ / t₂；注2：R_θJC(t) = r(t) × R_θJC；X轴 Pulse Width 0.000001–1 s，Y轴 r(t) 0.001–10，双对数轴）

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TO220F-3L Package Outline

Notes:

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. All dimensions in millimeter (angle in degree).
3. Dimensions D and E1 do not include mold flash.

单位：MILLIMETER