Specifications
- Automotive (Y/N)
- N
- Package
- TO220F-3L
- Configuration
- N
- Tj
- 175 °C
- VDS_Max
- 650 V
- ID_Max
- 9 A
- VGS_Max
- -10/+22 V
- VGS(th)_Typ
- 3.2 V
- RDS(ON)_Typ @VGS=18V,25°C
- 190 mΩ
- RDS(ON)_Max @VGS=18V,25°C
- 240 mΩ
- RDS(ON)_Typ @VGS=18V,175°C
- 265 mΩ
- EAS_Max
- 164 mJ
- Ciss_Typ
- 261 pF
- Coss_Typ
- 22 pF
- Crss_Typ
- 3 pF
- Qg_Typ
- 13.5 nC
- MPQ
- 1000 pcs
- MOQ
- 5000 pcs
Not sure how to choose? Read the SiC MOSFETs Selection Guide →
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SCMP65R190BF
650V N-Channel Silicon Carbide Power MOSFET
Product Summary
| VDS |
RDS(ON)_TYP |
I_D_MAX |
| 650 V |
190 mΩ @VGS = 18V |
9.0 A |
TO220F-3L
PIN Configuration (Top View): G — D — S
Features
- High blocking voltage with low On-Resistance
- High speed switching with low capacitances
- Easy to parallel and simple to drive
- Avalanche ruggedness
- Halogen free, RoHS compliant
Benefits
- Higher system efficiency
- Reduced cooling requirements
- Increased power density
- Increased system switching frequency
Applications
- Solar inverters
- Switch mode power supplies
- High voltage DC/DC converters
- Battery chargers
- Motor drives
- Pulsed power applications
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SCMP65R190BF |
TO220F-3L |
P65R190B |
Tube |
50 |
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
650 |
V |
| Gate - Source Voltage (Absolute maximum values) |
VGSmax |
-10/+22 |
V |
| Gate - Source Voltage (Recommended operating values) |
VGSop |
-5/+18 |
V |
| Continuous Drain Current (VGS = 18V) (1) TC = 25°C |
ID |
9.0 |
A |
| Continuous Drain Current (VGS = 18V) (1) TC = 100°C |
ID |
6.4 |
A |
| Pulsed Drain Current (2) |
IDM |
36 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
164 |
mJ |
| Power Dissipation TC = 25°C |
PD |
43 |
W |
| Power Dissipation TC = 100°C |
PD |
22 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ. |
Max. |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
40 |
50 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
2.7 |
3.5 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 1.0mA |
650 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 650V, VGS = 0V |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = +22V, VDS = 0V |
— |
— |
200 |
nA |
| Gate-Source Leakage Current |
IGSS |
VGS = -10V, VDS = 0V |
— |
— |
-200 |
nA |
On Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VGS = VDS, ID = 1.0mA, TJ = 25°C |
2.1 |
3.2 |
4.2 |
V |
| Gate Threshold Voltage |
VGS(th) |
VGS = VDS, ID = 1.0mA, TJ = 175°C |
— |
2.3 |
— |
V |
| Static Drain-Source On-Resistance |
RDS(ON) |
VGS = 18V, ID = 5.0A, TJ = 25°C |
— |
190 |
240 |
mΩ |
| Static Drain-Source On-Resistance |
RDS(ON) |
VGS = 18V, ID = 5.0A, TJ = 175°C |
— |
265 |
— |
mΩ |
| Static Drain-Source On-Resistance |
RDS(ON) |
VGS = 15V, ID = 5.0A, TJ = 25°C |
— |
250 |
— |
mΩ |
| Static Drain-Source On-Resistance |
RDS(ON) |
VGS = 15V, ID = 5.0A, TJ = 175°C |
— |
290 |
— |
mΩ |
| Diodes Forward Voltage |
VSD |
VGS = -5.0V, ISD = 5.0A, TJ = 25°C |
— |
5.0 |
— |
V |
| Diodes Forward Voltage |
VSD |
VGS = -5.0V, ISD = 5.0A, TJ = 175°C |
— |
4.4 |
— |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Input Capacitance |
Ciss |
VDS = 400V, VGS = 0V, f = 1MHz |
— |
261 |
— |
pF |
| Output Capacitance |
Coss |
VDS = 400V, VGS = 0V, f = 1MHz |
— |
22 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
VDS = 400V, VGS = 0V, f = 1MHz |
— |
3.0 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
32 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Turn-On Switching Loss |
Eon |
VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V |
— |
20 |
— |
µJ |
| Turn-Off Switching Loss |
Eoff |
VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V |
— |
7.8 |
— |
µJ |
| Total Switching Loss |
Etot |
VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V |
— |
28 |
— |
µJ |
| Turn-On Delay Time |
td(on) |
VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V |
— |
8.2 |
— |
ns |
| Rise Time |
tr |
VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V |
— |
17 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V |
— |
18 |
— |
ns |
| Fall Time |
tf |
VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V |
— |
12 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Total Gate Charge (VGS = 18V) |
Qg |
VDS = 400V, ID = 5.0A, VGS = -5/18V |
— |
13.5 |
— |
nC |
| Gate-Source Charge |
Qgs |
VDS = 400V, ID = 5.0A, VGS = -5/18V |
— |
3.2 |
— |
nC |
| Gate-Drain Charge |
Qgd |
VDS = 400V, ID = 5.0A, VGS = -5/18V |
— |
5.3 |
— |
nC |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
| Body Diode Reverse Recovery Time |
trr |
VDS = 400V, VGS = -5.0V, ISD = 5.0A, di/dt = 1000A/µs |
— |
8.3 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
VDS = 400V, VGS = -5.0V, ISD = 5.0A, di/dt = 1000A/µs |
— |
21 |
— |
nC |
| Peak Reverse Recovery Current |
Irrm |
VDS = 400V, VGS = -5.0V, ISD = 5.0A, di/dt = 1000A/µs |
— |
4.3 |
— |
A |
| Diode Forward Current |
IS |
TC = 25°C |
— |
— |
9 |
A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test, EAS condition: TJ = 25°C, VDD = 325V, VGS = 10V, L = 10mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
Typical Electrical and Thermal Characteristics
（原 datasheet 含以下特性曲线图，此处略）
- Figure 1: Output Characteristics TJ = 25°C
- Figure 2: Output Characteristics TJ = 175°C
- Figure 3: On-Resistance vs. Junction Temperature (ID = 5.0A, VGS = 18V / 15V)
- Figure 4: Transfer Characteristics (VDS = 20V, TJ = 25°C / 175°C)
- Figure 5: Body Diode Characteristic, TJ = 25°C (VGS = 0V / -5.0V)
- Figure 6: Body Diode Characteristic, TJ = 175°C (VGS = 0V / -5.0V)
- Figure 7: Gate Threshold Variation vs. Junction Temperature (ID = 250µA / 1.0mA)
- Figure 8: Gate Charge Characteristics (ID = 5.0A)
- Figure 9: Capacitance Characteristics (Ciss, Coss, Crss vs. VDS)
- Figure 10: Power Derating (PD vs. TC)
- Figure 11: Current Derating (ID vs. TC)
- Figure 12: Switching Losses vs. Drain Current (Eon, Eoff, Etot)
- Figure 13: Switching Losses vs. Gate Resistance (Eon, Eoff, Etot)
- Figure 14: Safe Operating Area (TJ(Max) = 175°C, TC = 25°C; DC / 1.0ms / 100µs / 10µs / 1.0µs)
- Figure 15: Normalized Maximum Transient Thermal Impedance (δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse; 1. Duty cycle δ = t1 / t2; 2. R_θJC(t) = r(t) × R_θJC)
TO220F-3L Package Outline
Package Notes:
- Dimensioning and tolerancing per ASME Y14.5M-1994.
- All dimensions in millimeter (angle in degree).
- Dimensions D and E1 do not include mold flash.
| DIM. |
MIN. |
NOM. |
MAX. |
| A |
4.50 |
4.70 |
4.90 |
| A1 |
2.34 |
2.54 |
2.74 |
| A2 |
2.50 |
2.76 |
2.96 |
| b |
0.60 |
0.80 |
1.00 |
| b1 |
-- |
-- |
1.47 |
| b2 |
1.10 |
-- |
1.38 |
| c |
0.40 |
0.50 |
0.63 |
| c1 |
0.70 REF |
|
|
| D |
9.96 |
-- |
10.40 |
| e |
2.54 BSC |
|
|
| E |
28.30 |
28.85 |
29.35 |
| E1 |
15.67 |
15.87 |
16.10 |
| G |
3.20 |
-- |
3.40 |
| L |
12.68 |
-- |
13.30 |
| L1 |
-- |
-- |
3.50 |
| L2 |
6.48 |
6.68 |
6.88 |
| P |
3.30 REF |
|
|
| θ |
0° |
-- |
12° |
（所有尺寸单位：毫米；角度单位：度）
